BibTeX record conf/asicon/HigashinoATKTK15

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@inproceedings{DBLP:conf/asicon/HigashinoATKTK15,
  author       = {Masashi Higashino and
                  Hitoshi Aoki and
                  Nobukazu Tsukiji and
                  Masaki Kazumi and
                  Takuya Totsuka and
                  Haruo Kobayashi},
  title        = {Study on maximum electric field modeling used for {HCI} induced degradation
                  characteristic of {LDMOS} transistors},
  booktitle    = {2015 {IEEE} 11th International Conference on ASIC, {ASICON} 2015,
                  Chengdu, China, November 3-6, 2015},
  pages        = {1--4},
  publisher    = {{IEEE}},
  year         = {2015},
  url          = {https://doi.org/10.1109/ASICON.2015.7516945},
  doi          = {10.1109/ASICON.2015.7516945},
  timestamp    = {Thu, 06 Feb 2020 08:30:50 +0100},
  biburl       = {https://dblp.org/rec/conf/asicon/HigashinoATKTK15.bib},
  bibsource    = {dblp computer science bibliography, https://dblp.org}
}
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