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Tangali S. Sudarshan

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2000 – 2009

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2009
[j3]
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  - journals/mr/MuzykovKZCBAS09
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  - https://dblp.org/rec/journals/mr/MuzykovKZCBAS09
Peter G. Muzykov, Robert M. Kennedy, Qingchun Zhang, Craig Capell, Al Burk, Anant Agarwal, Tangali S. Sudarshan:
Physical phenomena affecting performance and reliability of 4H-SiC bipolar junction transistors. Microelectron. Reliab. 49(1): 32-37 (2009)
2008
[j2]
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A. Grekov, Qingchun Zhang, Fatima Husna, Anant Agarwal, Tangali S. Sudarshan:
Effect of crystallographic defects on the reverse performance of 4H-SiC JBS diodes. Microelectron. Reliab. 48(10): 1664-1668 (2008)
2005
[j1]
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  - journals/mva/KubotaTMS05
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Toshiro Kubota, Parag Talekar, Xianyun Ma, Tangali S. Sudarshan:
A nondestructive automated defect detection system for silicon carbide wafers. Mach. Vis. Appl. 16(3): 170-176 (2005)

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