Subhasis Haldar

Name: dblp XML data dump
Creator: Schloss Dagstuhl - Leibniz Center for Informatics
Published: 1993
License: https://creativecommons.org/publicdomain/zero/1.0/
Keywords: dblp, XML, computer science, scholarly publications, metadata

◀ ▶ joint publications with Mridula Gupta

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Publications

2015
[c1]
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Jay Hind K. Verma, Mridula Gupta, Subhasis Haldar, R. S. Gupta:
Performance investigation and linearity analysis of new cylindrical MOSFET for wireless applications. ICM 2015: 186-189
2014
[j7]
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  - journals/mj/PratapGHGG14
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Yogesh Pratap, Pujarini Ghosh, Subhasis Haldar, R. S. Gupta, Mridula Gupta:
An analytical subthreshold current modeling of cylindrical gate all around (CGAA) MOSFET incorporating the influence of device design engineering. Microelectron. J. 45(4): 408-415 (2014)
[j6]
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Manoj Kumar, Subhasis Haldar, Mridula Gupta, R. S. Gupta:
Impact of gate material engineering(GME) on analog/RF performance of nanowire Schottky-barrier gate all around (GAA) MOSFET for low power wireless applications: 3D T-CAD simulation. Microelectron. J. 45(11): 1508-1514 (2014)
2012
[j5]
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  - journals/mj/GhoshHGG12
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Pujarini Ghosh, Subhasis Haldar, R. S. Gupta, Mridula Gupta:
An analytical drain current model for dual material engineered cylindrical/surrounded gate MOSFET. Microelectron. J. 43(1): 17-24 (2012)
2007
[j3]
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  - journals/mj/KabraKHGG07
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Sneha Kabra, Harsupreet Kaur, Subhasis Haldar, Mridula Gupta, R. S. Gupta:
Two-dimensional subthreshold analysis of sub-micron GaN MESFET. Microelectron. J. 38(4-5): 547-555 (2007)
[j2]
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  - journals/mj/GangwaniPHGG07
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Parvesh Gangwani, Sujata Pandey, Subhasis Haldar, Mridula Gupta, R. S. Gupta:
A compact C-V model for 120nm AlGaN/GaN HEMT with modified field dependent mobility for high frequency applications. Microelectron. J. 38(8-9): 848-854 (2007)
2006
[j1]
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Sneha Kabra, Harsupreet Kaur, Ritesh Gupta, Subhasis Haldar, Mridula Gupta, R. S. Gupta:
A semi empirical approach for submicron GaN MESFET using an accurate velocity field relationship for high power applications. Microelectron. J. 37(7): 620-626 (2006)

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