Nobuyuki Sugii

Name: dblp XML data dump
Creator: Schloss Dagstuhl - Leibniz Center for Informatics
Published: 1993
License: https://creativecommons.org/publicdomain/zero/1.0/
Keywords: dblp, XML, computer science, scholarly publications, metadata

◀ ▶ joint publications with Kenji Natori

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Publications

2015
[j12]
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Wei Li, Akito Sasaki, Hideyuki Oozu, Katsuaki Aoki, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai:
Improvement of charge/discharge performance for lithium ion batteries with tungsten trioxide electrodes. Microelectron. Reliab. 55(2): 402-406 (2015)
[j11]
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  - journals/mr/LiSOAKKNSWTNI15a
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Wei Li, Akito Sasaki, Hideyuki Oozu, Katsuaki Aoki, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai:
Electron transport mechanism of tungsten trioxide powder thin film studied by investigating effect of annealing on resistivity. Microelectron. Reliab. 55(2): 407-410 (2015)
2014
[j10]
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  - journals/mr/DouSNKAKNSWTNI14
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Chunmeng Dou, Tomoya Shoji, Kazuhiro Nakajima, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai:
Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement. Microelectron. Reliab. 54(4): 725-729 (2014)
[j9]
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  - journals/mr/WuHKOWNSWTKNYI14
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Yan Wu, Hiroyuki Hasegawa, Kuniyuki Kakushima, Kenji Ohmori, Takanobu Watanabe, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Yoshinori Kataoka, Kenji Natori, Keisaku Yamada, Hiroshi Iwai:
A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability. Microelectron. Reliab. 54(5): 899-904 (2014)
2013
[c2]
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  - conf/essderc/KawanagoKKNSWTNI13
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Takamasa Kawanago, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai:
Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT. ESSDERC 2013: 107-110
2012
[j8]
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  - journals/mr/DouKATNSNHI12
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Chunmeng Dou, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai:
Resistive switching behavior of a CeO₂ based ReRAM cell incorporated with Si buffer layer. Microelectron. Reliab. 52(4): 688-691 (2012)
[j7]
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  - journals/mr/MamatrishatKSKATKNSNHI12
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M. Mamatrishat, T. Kubota, T. Seki, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai:
Oxide and interface trap densities estimation in ultrathin W/La₂O₃/Si MOS capacitors. Microelectron. Reliab. 52(6): 1039-1042 (2012)
[c1]
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  - conf/essderc/KawanagoKAKNSTNHI12
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Takamasa Kawanago, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Kazuo Tsutsui, Kenji Natori, Takeo Hattori, Hiroshi Iwai:
(100)- and (110)-oriented nMOSFETs with highly scaled EOT in La-silicate/Si interface for multi-gate architecture. ESSDERC 2012: 89-92
2011
[j6]
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  - journals/mr/ZadeSKSATNSNHSI11
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D. Zade, Soshi Sato, Kuniyuki Kakushima, A. Srivastava, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Chandan Kumar Sarkar, Hiroshi Iwai:
Effects of La₂O₃ incorporation in HfO₂ gated nMOSFETs on low-frequency noise. Microelectron. Reliab. 51(4): 746-750 (2011)

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