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Mohab Anis
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Publications
- 2014
- [c47]Hassan Mostafa, Mohab Anis, Mohamed I. Elmasry:
Negative capacitance circuits for process variations compensation and timing yield improvement. CCECE 2014: 1-4 - 2013
- [j42]Hassan Mostafa, Mohab Anis, Mohamed I. Elmasry:
Statistical SRAM Read Access Yield Improvement Using Negative Capacitance Circuits. IEEE Trans. Very Large Scale Integr. Syst. 21(1): 92-101 (2013) - [c46]Hassan Mostafa, Mohab Anis, Mohamed I. Elmasry:
Negative capacitance circuits for process variations compensation and timing yield improvement. ICECS 2013: 277-280 - 2012
- [j39]Hassan Mostafa, Mohab Anis, Mohamed I. Elmasry:
On-Chip Process Variations Compensation Using an Analog Adaptive Body Bias (A-ABB). IEEE Trans. Very Large Scale Integr. Syst. 20(4): 770-774 (2012) - 2011
- [j35]Hassan Mostafa, Mohab Anis, Mohamed I. Elmasry:
Novel Timing Yield Improvement Circuits for High-Performance Low-Power Wide Fan-In Dynamic OR Gates. IEEE Trans. Circuits Syst. I Regul. Pap. 58-I(8): 1785-1797 (2011) - [j32]Hassan Mostafa, Mohab Anis, Mohamed I. Elmasry:
Adaptive Body Bias for Reducing the Impacts of NBTI and Process Variations on 6T SRAM Cells. IEEE Trans. Circuits Syst. I Regul. Pap. 58-I(12): 2859-2871 (2011) - [j31]Hassan Mostafa, Mohab Anis, Mohamed I. Elmasry:
Analytical Soft Error Models Accounting for Die-to-Die and Within-Die Variations in Sub-Threshold SRAM Cells. IEEE Trans. Very Large Scale Integr. Syst. 19(2): 182-195 (2011) - [j29]Hassan Mostafa, Mohab Anis, Mohamed I. Elmasry:
A Novel Low Area Overhead Direct Adaptive Body Bias (D-ABB) Circuit for Die-to-Die and Within-Die Variations Compensation. IEEE Trans. Very Large Scale Integr. Syst. 19(10): 1848-1860 (2011) - [j28]Hassan Mostafa, Mohab Anis, Mohamed I. Elmasry:
A Bias-Dependent Model for the Impact of Process Variations on the SRAM Soft Error Immunity. IEEE Trans. Very Large Scale Integr. Syst. 19(11): 2130-2134 (2011) - 2010
- [j21]Hassan Mostafa, Mohab Anis, Mohamed I. Elmasry:
A Design-Oriented Soft Error Rate Variation Model Accounting for Both Die-to-Die and Within-Die Variations in Submicrometer CMOS SRAM Cells. IEEE Trans. Circuits Syst. I Regul. Pap. 57-I(6): 1298-1311 (2010) - [c39]Hassan Mostafa, Mohab Anis, Mohamed I. Elmasry:
Comparative analysis of power yield improvement under process variation of sub-threshold flip-flops. ISCAS 2010: 1739-1742 - [c38]Hassan Mostafa, Mohab Anis, Mohamed I. Elmasry:
Statistical timing yield improvement of dynamic circuits using negative capacitance technique. ISCAS 2010: 1747-1750 - 2009
- [c33]Hassan Mostafa, Mohab Anis, Mohamed I. Elmasry:
Comparative Analysis of Timing Yield Improvement under Process Variations of Flip-Flops Circuits. ISVLSI 2009: 133-138
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