Matteo Meneghini

Name: dblp XML data dump
Creator: Schloss Dagstuhl - Leibniz Center for Informatics
Published: 1993
License: https://creativecommons.org/publicdomain/zero/1.0/
Keywords: dblp, XML, computer science, scholarly publications, metadata

◀ ▶ joint publications with Hervé Blanck

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Publications

2022
[c33]
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  - conf/irps/ChiocchettaSRMG22
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  - https://dblp.org/rec/conf/irps/ChiocchettaSRMG22
Francesca Chiocchetta, Carlo De Santi, Fabiana Rampazzo, Kalparupa Mukherjee, Jan Grünenpütt, Daniel Sommer, Hervé Blanck, Benoit Lambert, A. Gerosa, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse. IRPS 2022: 11
[c31]
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  - conf/irps/GaoCSMRMMZBSSLG22
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Zhan Gao, Francesca Chiocchetta, Carlo De Santi, Nicola Modolo, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Hervé Blanck, H. Stieglauer, D. Sommer, Benoit Lambert, Jan Grünenpütt, O. Kordina, J.-T. Chen, J.-C. Jacquet, Cedric Lacam, S. Piotrowicz:
Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier. IRPS 2022: 51-1
2018
[j54]
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  - journals/mr/RzinCSMHHSMSSGB18
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Mehdi Rzin, Alessandro Chini, Carlo De Santi, Matteo Meneghini, A. Hugger, Marc Hollmer, H. Stieglauer, M. Madel, J. Splettstößer, Daniel Sommer, Jan Grünenpütt, K. Beilenhoff, Hervé Blanck, J.-T. Chen, O. Kordina, Gaudenzio Meneghesso, Enrico Zanoni:
On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs. Microelectron. Reliab. 88-90: 397-401 (2018)
2014
[j24]
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Antonio Stocco, Simone Gerardin, Davide Bisi, Stefano Dalcanale, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Jan Grünenpütt, Benoit Lambert, Hervé Blanck, Enrico Zanoni:
Proton induced trapping effect on space compatible GaN HEMTs. Microelectron. Reliab. 54(9-10): 2213-2216 (2014)
[j22]
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Antonio Stocco, Stefano Dalcanale, Fabiana Rampazzo, Matteo Meneghini, Gaudenzio Meneghesso, Jan Grünenpütt, Benoit Lambert, Hervé Blanck, Enrico Zanoni:
Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications. Microelectron. Reliab. 54(9-10): 2237-2241 (2014)

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