Albena Paskaleva

Name: dblp XML data dump
Creator: Schloss Dagstuhl - Leibniz Center for Informatics
Published: 1993
License: https://creativecommons.org/publicdomain/zero/1.0/
Keywords: dblp, XML, computer science, scholarly publications, metadata

◀ ▶ joint publications with Elena Atanassova

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Publications

2014
[j13]
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Elena Atanassova, Nenad Novkovski, D. Spassov, Albena Paskaleva, Aleksandar Skeparovski:
Time-dependent-dielectric-breakdown characteristics of Hf-doped Ta₂O₅/SiO₂ stack. Microelectron. Reliab. 54(2): 381-387 (2014)
2012
[j12]
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Elena Atanassova, Albena Paskaleva, D. Spassov:
Doped Ta₂O₅ and mixed HfO₂-Ta₂O₅ films for dynamic memories applications at the nanoscale. Microelectron. Reliab. 52(4): 642-650 (2012)
2011
[j11]
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D. Spassov, Elena Atanassova, Albena Paskaleva:
Lightly Al-doped Ta₂O₅: Electrical properties and mechanisms of conductivity. Microelectron. Reliab. 51(12): 2102-2109 (2011)
2010
[j10]
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Elena Atanassova, Nenad Novkovski, Albena Paskaleva, D. Spassov:
Constant current stress-induced leakage current in mixed HfO₂-Ta₂O₅ stacks. Microelectron. Reliab. 50(6): 794-800 (2010)
2008
[j9]
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  - journals/mr/AtanassovaPN08
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Elena Atanassova, Albena Paskaleva, Nenad Novkovski:
Effects of the metal gate on the stress-induced traps in Ta₂O₅/SiO₂ stacks. Microelectron. Reliab. 48(4): 514-525 (2008)
[j8]
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Elena Atanassova, Ninoslav Stojadinovic, Albena Paskaleva:
Degradation behavior of Ta₂O₅ stacks and its dependence on the gate electrode. Microelectron. Reliab. 48(8-9): 1193-1197 (2008)
2007
[j7]
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Elena Atanassova, Albena Paskaleva:
Challenges of Ta₂O₅ as high-k dielectric for nanoscale DRAMs. Microelectron. Reliab. 47(6): 913-923 (2007)
[j6]
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Elena Atanassova, D. Spassov, Albena Paskaleva:
Metal gates and gate-deposition-induced defects in Ta₂O₅ stack capacitors. Microelectron. Reliab. 47(12): 2088-2093 (2007)
2002
[j1]
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Elena Atanassova, Albena Paskaleva:
Breakdown fields and conduction mechanisms in thin Ta₂O₅ layers on Si for high density DRAMs. Microelectron. Reliab. 42(2): 157-173 (2002)

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