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ORCIDAntonio Cerdeira
- > Home > Persons > Antonio Cerdeira
Publications
- 2016
[j23]Magali Estrada, M. Rivas, Ivan Garduño, F. Avila-Herrera, Antonio Cerdeira, Marcelo Antonio Pavanello, Israel Mejia
, M. A. Quevedo-Lopez:
Temperature dependence of the electrical characteristics up to 370 K of amorphous In-Ga-ZnO thin film transistors. Microelectron. Reliab. 56: 29-33 (2016)- [j21]Antonio Cerdeira, Magali Estrada, Lluís F. Marsal, Josep Pallarès, Benjamín Iñíguez:
On the series resistance in staggered amorphous thin film transistors. Microelectron. Reliab. 63: 325-335 (2016) - [c6]Y. Hernandez-Barrios, F. Avila-Herrera, Magali Estrada, Antonio Cerdeira, Oana Moldovan, Benjamín Iñíguez, Rodrigo Picos:
Modeling the variation of threshold voltage, mobility factor and saturation coefficient in amorphous Indium-Gallium-Zinc Oxide thin film transistors. CCE 2016: 1-4 - 2014
- [j19]C. Meneses, J. G. Sánchez, Magali Estrada, Antonio Cerdeira, Josep Pallarès, Benjamín Iñíguez, Lluís F. Marsal:
Characterization of MIS structures and PTFTs using TiOx deposited by spin-coating. Microelectron. Reliab. 54(5): 893-898 (2014) - 2012
- [j17]Alejandra Castro-Carranza, Magali Estrada, Jairo C. Nolasco, Antonio Cerdeira, Lluís F. Marsal, Benjamín Iñíguez, Josep Pallarès:
Organic thin-film transistor bias-dependent capacitance compact model in accumulation regime. IET Circuits Devices Syst. 6(2): 130-135 (2012) - [j16]Rodrigo Picos, Eugenio García-Moreno, Miquel Roca, Benjamín Iñíguez, Magali Estrada, Antonio Cerdeira:
Optimised design of an organic thin-film transistor amplifier using the gm/ID methodology. IET Circuits Devices Syst. 6(2): 136-140 (2012) - [j15]Magali Estrada, Antonio Cerdeira, Benjamín Iñíguez:
Effect of interface charge on the dc bias stress-induced deformation and shift of the transfer characteristic of amorphous oxide thin-film transistors. Microelectron. Reliab. 52(7): 1342-1345 (2012) - [j14]Antonio Cerdeira, Magali Estrada, Blanca S. Soto-Cruz, Benjamín Iñíguez:
Modeling the behavior of amorphous oxide thin film transistors before and after bias stress. Microelectron. Reliab. 52(11): 2532-2536 (2012) - 2011
- [j13]V. S. Balderrama, Magali Estrada, Antonio Cerdeira, Blanca S. Soto-Cruz, Lluís F. Marsal, Josep Pallarès, Jairo C. Nolasco, Benjamín Iñíguez, Emilio Palomares, Josep Albero:
Influence of P3HT: PCBM blend preparation on the active layer morphology and cell degradation. Microelectron. Reliab. 51(3): 597-601 (2011) - [c4]Antonio Cerdeira, Magali Estrada, Benjamín Iñíguez, S. Soto:
Modeling the subthreshold region of OTFTs. CCE 2011: 1-4 - [c3]Salvador Ivan Garduño, Antonio Cerdeira, Magali Estrada:
Gate leakage currents modeling for oxynitride gate dielectric in double gate MOSFETs. CCE 2011: 1-5 - 2008
- [j10]Julio C. Tinoco, Magali Estrada, Benjamín Iñíguez, Antonio Cerdeira:
Conduction mechanisms of silicon oxide/titanium oxide MOS stack structures. Microelectron. Reliab. 48(3): 370-381 (2008) - 2005
- [j8]Magali Estrada, Antonio Cerdeira, Luis Reséndiz, Benjamín Iñíguez, Lluís F. Marsal, Josep Pallarès:
Effect of localized traps on the anomalous behavior of the transconductance in nanocrystalline TFTs. Microelectron. Reliab. 45(7-8): 1161-1166 (2005) - 2003
- [j7]Magali Estrada, A. Afzalian, Denis Flandre, Antonio Cerdeira, Héctor Báez-Medina, A. de Lucca:
FD MOS SOI circuit to enhance the ratio of illuminated to dark current of a co-integrated a-Si: H photodiode. Microelectron. Reliab. 43(2): 189-193 (2003) - [j6]Rodolfo Zolá García-Lozano, Magali Estrada, Antonio Cerdeira:
Effects of impurity concentration, hydrogen plasma process and crystallization temperature on poly-crystalline films obtained from PECVD a-Si: H layers. Microelectron. Reliab. 43(8): 1281-1287 (2003) - 2002
- [j2]Adelmo Ortiz-Conde, Francisco J. García-Sánchez, Juin J. Liou, Antonio Cerdeira, Magali Estrada, Y. Yue:
A review of recent MOSFET threshold voltage extraction methods. Microelectron. Reliab. 42(4-5): 583-596 (2002) - 2001
- [j1]Magali Estrada, Antonio Cerdeira, Adelmo Ortiz-Conde, Francisco J. García-Sánchez:
Determination of trap cross-section in a-Si: H p-i-n diodes parameters using simulation and parameter extraction. Microelectron. Reliab. 41(4): 605-610 (2001)
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