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ORCIDR. S. Gupta
- > Home > Persons > R. S. Gupta
Publications
- 2023
[j28]Nisha Chugh, Subhasis Haldar, Monika Bhattacharya, R. S. Gupta:
Potential and electric field analysis of field plated AlGaN/GaN HEMT for high voltage applications using 2-D analytical approach. Microelectron. J. 138: 105857 (2023)- 2015
- [c2]Jay Hind K. Verma, Mridula Gupta, Subhasis Haldar, R. S. Gupta:
Performance investigation and linearity analysis of new cylindrical MOSFET for wireless applications. ICM 2015: 186-189 - 2014
- [j24]Yogesh Pratap
, Pujarini Ghosh, Subhasis Haldar, R. S. Gupta, Mridula Gupta:
An analytical subthreshold current modeling of cylindrical gate all around (CGAA) MOSFET incorporating the influence of device design engineering. Microelectron. J. 45(4): 408-415 (2014) - [j23]Manoj Kumar, Subhasis Haldar, Mridula Gupta, R. S. Gupta:
Impact of gate material engineering(GME) on analog/RF performance of nanowire Schottky-barrier gate all around (GAA) MOSFET for low power wireless applications: 3D T-CAD simulation. Microelectron. J. 45(11): 1508-1514 (2014) - 2012
- [j19]Pujarini Ghosh, Subhasis Haldar, R. S. Gupta, Mridula Gupta:
An analytical drain current model for dual material engineered cylindrical/surrounded gate MOSFET. Microelectron. J. 43(1): 17-24 (2012) - 2007
- [j8]Harsupreet Kaur, Sneha Kabra, Subhasis Haldar, R. S. Gupta:
An analytical drain current model for graded channel cylindrical/surrounding gate MOSFET. Microelectron. J. 38(3): 352-359 (2007) - [j7]Sneha Kabra, Harsupreet Kaur, Subhasis Haldar, Mridula Gupta, R. S. Gupta:
Two-dimensional subthreshold analysis of sub-micron GaN MESFET. Microelectron. J. 38(4-5): 547-555 (2007) - [j6]Parvesh Gangwani, Sujata Pandey, Subhasis Haldar, Mridula Gupta, R. S. Gupta:
A compact C-V model for 120nm AlGaN/GaN HEMT with modified field dependent mobility for high frequency applications. Microelectron. J. 38(8-9): 848-854 (2007) - 2006
- [j4]Sneha Kabra, Harsupreet Kaur, Ritesh Gupta, Subhasis Haldar, Mridula Gupta, R. S. Gupta:
A semi empirical approach for submicron GaN MESFET using an accurate velocity field relationship for high power applications. Microelectron. J. 37(7): 620-626 (2006)
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