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Shigetoshi Sugawa
2010 – today
- 2013
[j6]Yasuhisa Tochigi, Katsuhiko Hanzawa, Yuri Kato, Rihito Kuroda, Hideki Mutoh, Ryuta Hirose, Hideki Tominaga, Kenji Takubo, Yasushi Kondo, Shigetoshi Sugawa: A Global-Shutter CMOS Image Sensor With Readout Speed of 1-Tpixel/s Burst and 780-Mpixel/s Continuous. J. Solid-State Circuits 48(1): 329-338 (2013)- 2012
[c8]Philippe Gaubert, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi: The role of the temperature on the scattering mechanisms limiting the electron mobility in metal-oxide-semiconductor field-effect-transistors fabricated on (110) silicon-oriented wafers. ESSDERC 2012: 213-216
[c7]Yasuhisa Tochigi, Katsuhiko Hanzawa, Yuri Kato, Rihito Kuroda, Hideki Mutoh, Ryuta Hirose, Hideki Tominaga, Kenji Takubo, Yasushi Kondo, Shigetoshi Sugawa: A global-shutter CMOS image sensor with readout speed of 1Tpixel/s burst and 780Mpixel/s continuous. ISSCC 2012: 382-384- 2010
[c6]Yoshiaki Tashiro, Shun Kawada, Shin Sakai, Shigetoshi Sugawa: Checker-pattern and shared two pixels LOFIC CMOS image sensors. ASP-DAC 2010: 343-344
[c5]Takahiro Kohara, Woonghee Lee, Koichi Mizobuchi, Shigetoshi Sugawa: A CMOS image sensor with 2.0-e- random noise and 110-ke- full well capacity using column source follower readout circuits. ASP-DAC 2010: 345-346
[c4]Shun Kawada, Shin Sakai, Yoshiaki Tashiro, Shigetoshi Sugawa: Checkered white-RGB color LOFIC CMOS image sensor. ASP-DAC 2010: 347-348
2000 – 2009
- 2008
[j5]Akinobu Teramoto, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi: Accurate negative bias temperature instability lifetime prediction based on hole injection. Microelectronics Reliability 48(10): 1649-1654 (2008)- 2007
[j4]Kazufumi Watanabe, Akinobu Teramoto, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi: Examination of degradation mechanism due to negative bias temperature stress from a perspective of hole energy for accurate lifetime prediction. Microelectronics Reliability 47(2-3): 409-418 (2007)
[j3]Koutarou Tanaka, Hiroaki Tanaka, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi: High quality gate insulator film formation on SiC using by microwave-excited high-density plasma. Microelectronics Reliability 47(4-5): 786-789 (2007)
[j2]Rihito Kuroda, Akinobu Teramoto, Kazufumi Watanabe, Michihiko Mifuji, Takahisa Yamaha, Shigetoshi Sugawa, Tadahiro Ohmi: Circuit level prediction of device performance degradation due to negative bias temperature stress. Microelectronics Reliability 47(6): 930-936 (2007)
[c3]Roel Pantonial, Md. Ashfaquzzaman Khan, Naoto Miyamoto, Koji Kotani, Shigetoshi Sugawa, Tadahiro Ohmi: Improving Execution Speed of FPGA using Dynamically Reconfigurable Technique. ASP-DAC 2007: 108-109
[c2]Naoto Miyamoto, Masahiko Shimakage, Tatsuo Morimoto, Kazuya Kadota, Shigetoshi Sugawa, Tadahiro Ohmi: A Rapid Prototyping of Real-Time Pattern Generator for Step-and-Scan Lithography Using Digital Micromirror Device. FPT 2007: 305-308- 2006
[j1]Chuan Jie Zhong, Hiroaki Tanaka, Shigetoshi Sugawa, Tadahiro Ohmi: High quality silicon nitride deposited by Ar/N2/H2/SiH4 high-density and low energy plasma at low temperature. Microelectronics Journal 37(1): 44-49 (2006)- 2003
[c1]Masanori Fujibayashi, Toshiyuki Nozawa, Takahiro Nakayama, Kenji Mochizuki, Koji Kotani, Shigetoshi Sugawa, Tadahiro Ohmi: A still image encoder based on adaptive resolution vector quantization employing needless calculation elimination architecture. ASP-DAC 2003: 567-568
Coauthor Index
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last updated on 2013-01-24 09:35 CET by the dblp team



