A. Sanseverino

G. Busatto, V. De Luca, Francesco Iannuzzo, A. Sanseverino, F. Velardi: Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure. Microelectronics Reliability 52(9-10): 2363-2367 (2012)

S. Baccaro, Giovanni Busatto, M. Citterio, Paolo Cova, Nicola Delmonte, Francesco Iannuzzo, A. Lanza, M. Riva, A. Sanseverino, G. Spiazzi: Reliability oriented design of power supplies for high energy physics applications. Microelectronics Reliability 52(9-10): 2465-2470 (2012)

G. Busatto, G. Currò, Francesco Iannuzzo, A. Porzio, A. Sanseverino, Francesco Velardi: Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET. Microelectronics Reliability 50(9-11): 1842-1847 (2010)

G. Busatto, G. Currò, Francesco Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi: Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions. Microelectronics Reliability 49(9-11): 1033-1037 (2009)

G. Busatto, G. Currò, Francesco Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi: Experimental evidence of "latent gate oxide damages" in medium voltage power MOSFET as a result of heavy ions exposure. Microelectronics Reliability 48(8-9): 1306-1309 (2008)

G. Busatto, Francesco Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi, G. Currò: Experimental study of power MOSFET's gate damage in radiation environment. Microelectronics Reliability 46(9-11): 1854-1857 (2006)

G. Busatto, A. Porzio, F. Velardi, Francesco Iannuzzo, A. Sanseverino, G. Currò: Experimental and Numerical investigation about SEB/SEGR of Power MOSFET. Microelectronics Reliability 45(9-11): 1711-1716 (2005)

F. Velardi, Francesco Iannuzzo, G. Busatto, J. Wyss, A. Sanseverino, A. Candelori, G. Currò, A. Cascio, F. Frisina: Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment. Microelectronics Reliability 43(9-11): 1847-1851 (2003)