| 2012 | ||
|---|---|---|
| j1 | Jung-Sik Kim, Chi Sung Oh, Hocheol Lee, Donghyuk Lee, Hyong-Ryol Hwang, Sooman Hwang, Byongwook Na, Joungwook Moon, Jin-Guk Kim, Hanna Park, Jang-Woo Ryu, Kiwon Park, Sang-Kyu Kang, So-Young Kim, Hoyoung Kim, Jong-Min Bang, Hyunyoon Cho, Minsoo Jang, Cheolmin Han, Jung-Bae Lee, Joo-Sun Choi, Young-Hyun Jun: A 1.2 V 12.8 GB/s 2 Gb Mobile Wide-I/O DRAM With 4 × 128 I/Os Using TSV Based Stacking. J. Solid-State Circuits 47(1): 107-116 (2012) | |
| 2011 | ||
| c1 | Jung-Sik Kim, Chi Sung Oh, Hocheol Lee, Donghyuk Lee, Hyong-Ryol Hwang, Sooman Hwang, Byongwook Na, Joungwook Moon, Jin-Guk Kim, Hanna Park, Jang-Woo Ryu, Kiwon Park, Sang-Kyu Kang, So-Young Kim, Hoyoung Kim, Jong-Min Bang, Hyunyoon Cho, Minsoo Jang, Cheolmin Han, Jung-Bae Lee, Kyehyun Kyung, Joo-Sun Choi, Young-Hyun Jun: A 1.2V 12.8GB/s 2Gb mobile Wide-I/O DRAM with 4×128 I/Os using TSV-based stacking. ISSCC 2011: 496-498 | |
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