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 | 2005 | |
|---|---|---|
| j3 |      | F. Palumbo, G. Condorelli, Salvatore Lombardo, K. L. Pey, C. H. Tung, L. J. Tang: Structure of the oxide damage under progressive breakdown. Microelectronics Reliability 45(5-6): 845-848 (2005) |
| 2003 | ||
| j2 | | K. L. Pey, C. H. Tung, M. K. Radhakrishnan, L. J. Tang, Y. Sun, X. D. Wang, W. H. Lin: Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM. Microelectronics Reliability 43(9-11): 1471-1476 (2003) |
| 2002 | ||
| j1 | | M. K. Radhakrishnan, K. L. Pey, C. H. Tung, W. H. Lin: Physical analysis of hard and soft breakdown failures in ultrathin gate oxides. Microelectronics Reliability 42(4-5): 565-571 (2002) |
| 1 | G. Condorelli | |
| 2 | W. H. Lin | |
| 3 | Salvatore Lombardo | |
| 4 | F. Palumbo | |
| 5 | M. K. Radhakrishnan | |
| 6 | Y. Sun | |
| 7 | L. J. Tang | |
| 8 | C. H. Tung | |
| 9 | X. D. Wang |
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