| 2010 | ||
|---|---|---|
| j1 | Ki-Whan Song, Jinyoung Kim, Jae-Man Yoon, Sua Kim, Huijung Kim, Hyun-Woo Chung, Hyungi Kim, Kanguk Kim, Hwan-Wook Park, Hyun Chul Kang, Nam-Kyun Tak, Dukha Park, Woo-Seop Kim, Yeong-Taek Lee, Yong Chul Oh, Gyo-Young Jin, Jei-Hwan Yoo, Donggun Park, Kyungseok Oh, Changhyun Kim, Young-Hyun Jun: A 31 ns Random Cycle VCAT-Based 4F 2 DRAM With Manufacturability and Enhanced Cell Efficiency. J. Solid-State Circuits 45(4): 880-888 (2010) | |
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