Takashi Ohzone

Toshihiro Matsuda, Shinsuke Ishimaru, Shingo Nohara, Hideyuki Iwata, Kiyotaka Komoku, Takayuki Morishita, Takashi Ohzone: Current-Voltage Hysteresis Characteristics in MOS Capacitors with Si-Implanted Oxide. IEICE Transactions 92-C(12): 1523-1530 (2009)

H. Oshiyama, T. Matsuda, K. Suzuki, Hideyuki Iwata, Takashi Ohzone: A V_DD independent temperature sensor circuit with scaled CMOS process. ASP-DAC 2009: 111-112

Toshihiro Matsuda, Yuya Sugiyama, Keita Nohara, Kazuhiro Morita, Hideyuki Iwata, Takashi Ohzone, Takayuki Morishita, Kiyotaka Komoku: A Test Structure for Asymmetry and Orientation Dependence Analysis of CMOSFETs. IEICE Transactions 91-C(8): 1331-1337 (2008)

Takashi Ohzone, Eiji Ishii, Takayuki Morishita, Kiyotaka Komoku, Toshihiro Matsuda, Hideyuki Iwata: A Test Structure to Analyze Electrical CMOSFET Reliabilities between Center and Edge along the Channel Width. IEICE Transactions 90-C(2): 515-522 (2007)

Takashi Ohzone, Tatsuaki Sadamoto, Takayuki Morishita, Kiyotaka Komoku, Toshihiro Matsuda, Hideyuki Iwata: A CMOS Temperature Sensor Circuit. IEICE Transactions 90-C(4): 895-902 (2007)

Takashi Ohzone, Kazuhiko Okada, Takayuki Morishita, Kiyotaka Komoku, Toshihiro Matsuda, Hideyuki Iwata: A Test Structure to Analyze Highly-Doped-Drain and Lightly-Doped-Drain in CMOSFET. IEICE Transactions 89-C(9): 1351-1357 (2006)

Toshihiro Matsuda, Hiroaki Takeuchi, Akira Muramatsu, Hideyuki Iwata, Takashi Ohzone, Kyoji Yamashita, Norio Koike, Ken-ichiro Tatsuuma: A Test Structure for Two-Dimensional Analysis of MOSFETs by Hot-Carrier-Induced Photoemission. IEICE Transactions 88-C(5): 811-816 (2005)

Toshihiro Matsuda, Ryuichi Minami, Akira Kanamori, Hideyuki Iwata, Takashi Ohzone, Shinya Yamamoto, Takashi Ihara, Shigeki Nakajima: A Temperature and Supply Voltage Independent CMOS Voltage Reference Circuit. IEICE Transactions 88-C(5): 1087-1093 (2005)