M. Nafría

Nuria Ayala, Javier Martín-Martínez, Rosana Rodríguez, M. B. Gonzalez, Montserrat Nafría, X. Aymerich, Eddy Simoen: Characterization and SPICE modeling of the CHC related time-dependent variability in strained and unstrained pMOSFETs. Microelectronics Reliability 52(9-10): 1924-1927 (2012)

V. Iglesias, M. Lanza, A. Bayerl, M. Porti, M. Nafría, X. Aymerich, L. F. Liu, J. F. Kang, G. Bersuker, K. Zhang, Z. Y. Shen: Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO₂/Pt structures. Microelectronics Reliability 52(9-10): 2110-2114 (2012)

Carmen G. Almudéver, Antonio Rubio, Javier Martín-Martínez, Alberto Crespo-Yepes, Rosana Rodríguez, Montserrat Nafría: Shape-shifting digital hardware concept: Towards a new adaptive computing system. AHS 2012: 167-173

Nuria Ayala, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, X. Aymerich: Unified characterization of RTN and BTI for circuit performance and variability simulation. ESSDERC 2012: 266-269

Javier Martín-Martínez, E. Amat, M. B. Gonzalez, P. Verheyen, Rosana Rodríguez, M. Nafría, X. Aymerich, Eddy Simoen: SPICE modelling of hot-carrier degradation in Si_1-xGe_x S/D and HfSiON based pMOS transistors. Microelectronics Reliability 50(9-11): 1263-1266 (2010)

M. Lanza, M. Porti, M. Nafría, X. Aymerich, E. Whittaker, B. Hamilton: UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements. Microelectronics Reliability 50(9-11): 1312-1315 (2010)

Alberto Crespo-Yepes, Javier Martín-Martínez, Rosana Rodríguez, M. Nafría, X. Aymerich: Reversible dielectric breakdown in ultrathin Hf based high-k stacks under current-limited stresses. Microelectronics Reliability 49(9-11): 1024-1028 (2009)

M. Lanza, M. Porti, M. Nafría, X. Aymerich, G. Ghidini, A. Sebastiani: Trapped charge and stress induced leakage current (SILC) in tunnel SiO₂ layers of de-processed MOS non-volatile memory devices observed at the nanoscale. Microelectronics Reliability 49(9-11): 1188-1191 (2009)

W. Polspoel, Wilfried Vandervorst, L. Aguilera, M. Porti, M. Nafría, X. Aymerich: Nanometer-scale leakage measurements in high vacuum on de-processed high-k capacitors. Microelectronics Reliability 48(8-9): 1521-1524 (2008)

Georges G. E. Gielen, Peter H. N. De Wit, Elie Maricau, J. Loeckx, Javier Martín-Martínez, Ben Kaczer, Guido Groeseneken, Rosana Rodríguez, M. Nafría: Emerging Yield and Reliability Challenges in Nanometer CMOS Technologies. DATE 2008: 1322-1327

E. Amat, Rosana Rodríguez, M. Nafría, X. Aymerich, James H. Stathis: Influence of the SiO₂ layer thickness on the degradation of HfO₂/SiO₂ stacks subjected to static and dynamic stress conditions. Microelectronics Reliability 47(4-5): 544-547 (2007)

R. Fernández, Rosana Rodríguez, M. Nafría, X. Aymerich: Effect of oxide breakdown on RS latches. Microelectronics Reliability 47(4-5): 581-584 (2007)

Javier Martín-Martínez, Rosana Rodríguez, M. Nafría, X. Aymerich, James H. Stathis: Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror. Microelectronics Reliability 47(4-5): 665-668 (2007)

Javier Martín-Martínez, Simone Gerardin, Rosana Rodríguez, M. Nafría, X. Aymerich, A. Cester, Alessandro Paccagnella, G. Ghidini: Lifetime estimation of analog circuits from the electrical characteristics of stressed MOSFETs. Microelectronics Reliability 47(9-11): 1349-1352 (2007)

M. Lanza, M. Porti, M. Nafría, Guenther Benstetter, Werner Frammelsberger, H. Ranzinger, E. Lodermeier, G. Jaschke: Influence of the manufacturing process on the electrical properties of thin (k stacks observed with CAFM. Microelectronics Reliability 47(9-11): 1424-1428 (2007)

R. Fernández, Rosana Rodríguez, M. Nafría, X. Aymerich, Ben Kaczer, Guido Groeseneken: FinFET and MOSFET preliminary comparison of gate oxide reliability. Microelectronics Reliability 46(9-11): 1608-1611 (2006)

X. Blasco, M. Nafría, X. Aymerich, J. Pétry, Wilfried Vandervorst: Breakdown spots of ultra-thin (EOT<1.5nm) HfO₂/SiO₂ stacks observed with enhanced - CAFM. Microelectronics Reliability 45(5-6): 811-814 (2005)

R. Fernández, Rosana Rodríguez, M. Nafría, X. Aymerich: Influence of oxide breakdown position and device aspect ratio on MOSFET's output characteristics. Microelectronics Reliability 45(5-6): 861-864 (2005)

L. Aguilera, M. Porti, M. Nafría, X. Aymerich: Pre- and post-BD electrical conduction of stressed HfO₂/SiO₂ MOS gate stacks observed at the nanoscale. Microelectronics Reliability 45(9-11): 1390-1393 (2005)

M. Porti, S. Meli, M. Nafría, X. Aymerich: Pre-breakdown noise in electrically stressed thin SiO₂ layers of MOS devices observed with C-AFM. Microelectronics Reliability 43(8): 1203-1209 (2003)

M. Porti, M. Nafría, X. Aymerich: Oxide conductivity increase during the progressive-breakdown of SiO2 gate oxides observed with C-AFM. Microelectronics Reliability 43(9-11): 1501-1505 (2003)

X. Blasco, M. Nafría, X. Aymerich: Conduction and Breakdown Behaviour of Atomic Force Microscopy Grown SiO₂ Gate Oxide on MOS Structures. Microelectronics Reliability 42(9-11): 1513-1516 (2002)

Rosana Rodríguez, M. Porti, M. Nafría, X. Aymerich: Influence of a low field with opposite polarity to the stress on the degradation of 4.5 nm thick SiO₂ films. Microelectronics Reliability 41(7): 1011-1013 (2001)

M. Porti, X. Blasco, M. Nafría, X. Aymerich, Alexander Olbrich, Bernd Ebersberger: Local current fluctuations before and after breakdown of thin SiO₂ films observed with conductive atomic force microscope. Microelectronics Reliability 41(7): 1041-1044 (2001)

D. Hill, X. Blasco, M. Porti, M. Nafría, X. Aymerich: Characterising the surface roughness of AFM grown SiO₂ on Si. Microelectronics Reliability 41(7): 1077-1079 (2001)