Seiichi Miyazaki

Kuniaki Hashimoto, Akio Ohta, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki: Control of Interfacial Reaction of HfO₂/Ge Structure by Insertion of Ta Oxide Layer. IEICE Transactions 96-C(5): 674-679 (2013)

Akio Ohta, Katsunori Makihara, Seiichi Miyazaki, Masao Sakuraba, Junichi Murota: X-Ray Photoemission Study of SiO₂/Si/Si_0.55Ge_0.45/Si Heterostructures. IEICE Transactions 96-C(5): 680-685 (2013)

Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki: Photoexcited Carrier Transfer in a NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in MOS Structures. IEICE Transactions 96-C(5): 694-698 (2013)

Akio Ohta, Katsunori Makihara, Mitsuhisa Ikeda, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki: Evaluation of Chemical Composition and Bonding Features of Pt/SiO_x/Pt MIM Diodes and Its Impact on Resistance Switching Behavior. IEICE Transactions 96-C(5): 702-707 (2013)

Motoki Fukusima, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki: Characterization of Resistive Switching of Pt/Si-Rich Oxide/TiN System. IEICE Transactions 96-C(5): 708-713 (2013)

Daichi Takeuchi, Katsunori Makihara, Mitsuhisa Ikeda, Seiichi Miyazaki, Hirokazu Kaki, Tsukasa Hayashi: Characterization of Local Electronic Transport through Ultrathin Au/Highly-Dense Si Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy. IEICE Transactions 96-C(5): 718-721 (2013)

Akio Ohta, Yuta Goto, Shingo Nishigaki, Guobin Wei, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki: Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering. IEICE Transactions 95-C(5): 879-884 (2012)

Guobin Wei, Yuta Goto, Akio Ohta, Katsunori Makihara, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki: Impact of Annealing Ambience on Resistive Switching in Pt/TiO₂/Pt Structure. IEICE Transactions 94-C(5): 699-704 (2011)

Akio Ohta, Daisuke Kanme, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki: Characterization of Mg Diffusion into HfO₂/SiO₂/Si(100) Stacked Structures and Its Impact on Detect State Densities. IEICE Transactions 94-C(5): 717-723 (2011)

Masakazu Muraguchi, Yoko Sakurai, Yukihiro Takada, Shintaro Nomura, Kenji Shiraishi, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki, Yasuteru Shigeta, Tetsuo Endoh: Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor. IEICE Transactions 94-C(5): 730-736 (2011)

Katsunori Makihara, Mitsuhisa Ikeda, Akira Kawanami, Seiichi Miyazaki: Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots. IEICE Transactions 93-C(5): 569-572 (2010)

Kazuhiro Shimanoe, Katsunori Makihara, Mitsuhisa Ikeda, Seiichi Miyazaki: Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories. IEICE Transactions 92-C(5): 616-619 (2009)

Katsunori Makihara, Mitsuhisa Ikeda, Seiichiro Higashi, Seiichi Miyazaki: Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO₂ Structure as Evaluated by AFM/KFM. IEICE Transactions 91-C(5): 712-715 (2008)

Yanli Pei, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki, Seiji Inumiya, Yasuo Nara: Evaluation of Dielectric Reliability of Ultrathin HfSiO_xN_y in Metal-Gate Capacitors. IEICE Transactions 90-C(5): 962-967 (2007)

Hideki Murakami, Wataru Mizubayashi, Hirokazu Yokoi, Atsushi Suyama, Seiichi Miyazaki: Electrical Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation. IEICE Transactions 88-C(4): 640-645 (2005)

Hideki Murakami, Yoshikazu Moriwaki, Masafumi Fujitake, Daisuke Azuma, Seiichiro Higashi, Seiichi Miyazaki: Characterization of Atom Diffusion in Polycrystalline Si/SiGe/Si Stacked Gate. IEICE Transactions 88-C(4): 646-650 (2005)

Katsunori Makihara, Yoshihiro Okamoto, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki: Characterization of Germanium Nanocrystallites Grown on SiO₂ by a Conductive AFM Probe Technique. IEICE Transactions 88-C(4): 705-708 (2005)

Taku Shibaguchi, Mitsuhisa Ikeda, Hideki Murakami, Seiichi Miyazaki: Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots. IEICE Transactions 88-C(4): 709-712 (2005)