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Gerald Lucovsky
2000 – 2009
- 2008
[j9]S. Lee, J. P. Long, Gerald Lucovsky, J. L. Whitten, H. Seo, J. Lüning: Suppression of Ge-O and Ge-N bonding at Ge-HfO2 and Ge-TiO2 interfaces by deposition onto plasma-nitrided passivated Ge substrates: Integration issues Ge gate stacks into advanced devices. Microelectronics Reliability 48(3): 364-369 (2008)- 2006
- [j8]Gerald Lucovsky, H. Seo, L. B. Fleming, M. D. Ulrich, J. Lüning, Patrick Lysaght, Gennadi Bersuker: Intrinsic bonding defects in transition metal elemental oxides. Microelectronics Reliability 46(9-11): 1623-1628 (2006)
- 2005
- [j7]Gerald Lucovsky, J. C. Phillips: Bond strain and defects at interfaces in high-k gate stacks. Microelectronics Reliability 45(5-6): 770-778 (2005)
- [j6]Gerald Lucovsky, J. G. Hong, C. C. Fulton, N. A. Stoute, Y. Zou, R. J. Nemanich, D. E. Aspnes, H. Ade, D. G. Schlom: Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra. Microelectronics Reliability 45(5-6): 827-830 (2005)
- 2004
- [j5]Yi-Mu Lee, Yider Wu, Gerald Lucovsky: Breakdown and reliability of p-MOS devices with stacked RPECVD oxide/nitride gate dielectric under constant voltage stress. Microelectronics Reliability 44(2): 207-212 (2004)
- 2003
- [j4]Gerald Lucovsky: Electronic structure of transition metal/rare earth alternative high-K gate dielectrics: interfacial band alignments and intrinsic defects. Microelectronics Reliability 43(9-11): 1417-1426 (2003)
- 2002
- [j3]Carlton M. Osburn, Indong Kim, Sungkee Han, Indranil De, Kam F. Yee, Shyam Gannavaram, SungJoo Lee, Chung-Ho Lee, Zhijiong J. Luo, Wenjuan Zhu, John R. Hauser, Dim-Lee Kwong, Gerald Lucovsky, T. P. Ma, Mehmet C. Öztürk: Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go? IBM Journal of Research and Development 46(2-3): 299-316 (2002)
- 2001
- [j2]Gerald Lucovsky, Gilbert B. Rayner, Robert S. Johnson: Chemical and physical limits on the performance of metal silicate high-k gate dielectrics. Microelectronics Reliability 41(7): 937-945 (2001)
1990 – 1999
- 1999
- [j1]Gerald Lucovsky: Ultrathin nitrided gate dielectrics: Plasma processing, chemical characterization, performance, and reliability. IBM Journal of Research and Development 43(3): 301-326 (1999)
Coauthor Index
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last updated on 2012-09-10 16:04 CEST by the dblp team