Xinnan Lin

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	2010
j1		Lining Zhang, Jian Zhang, Yan Song, Xinnan Lin, Jin He, Mansun Chan: Charge-based model for symmetric double-gate MOSFETs with inclusion of channel doping effect. Microelectronics Reliability 50(8): 1062-1070 (2010)
c2		Chenyue Ma, Hao Wang, Xiufang Zhang, Frank He, Yadong He, Xing Zhang, Xinnan Lin: Asymmetric issues of FinFET device after hot carrier injection and impact on digital and analog circuits. ISQED 2010: 432-436
	2009
c1		Chenyue Ma, Bo Li, Lining Zhang, Jin He, Xing Zhang, Xinnan Lin, Mansun Chan: A unified FinFET reliability model including high K gate stack dynamic threshold voltage, hot carrier injection, and negative bias temperature instability. ISQED 2009: 7-12

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