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Keunwoo Kim
2010 – today
- 2012
[j4]Yi-Bo Liao, Meng-Hsueh Chiang, Keunwoo Kim, Wei-Chou Hsu: Assessment of structure variation in silicon nanowire FETs and impact on SRAM. Microelectronics Journal 43(5): 300-304 (2012)- 2010
- [c15]Jae-Joon Kim, Rahul M. Rao, Keunwoo Kim: Technology-circuit co-design of asymmetric SRAM cells for read stability improvement. CICC 2010: 1-4
- [c14]
2000 – 2009
- 2009
- [c13]Aditya Bansal, Rama N. Singh, Rouwaida Kanj, Saibal Mukhopadhyay, Jin-Fuw Lee, Emrah Acar, Amith Singhee, Keunwoo Kim, Ching-Te Chuang, Sani R. Nassif, Fook-Luen Heng, Koushik K. Das: Yield estimation of SRAM circuits using "Virtual SRAM Fab". ICCAD 2009: 631-636
- 2008
- [j3]Jente B. Kuang, Keunwoo Kim, Ching-Te Chuang, Hung C. Ngo, Fadi H. Gebara, Kevin J. Nowka: Circuit Techniques Utilizing Independent Gate Control in Double-Gate Technologies. IEEE Trans. VLSI Syst. 16(12): 1657-1665 (2008)
- [c12]Saibal Mukhopadhyay, Rajiv V. Joshi, Keunwoo Kim, Ching-Te Chuang: Variability Analysis for sub-100nm PD/SOI Sense-Amplifier. ISQED 2008: 488-491
- [c11]Rouwaida Kanj, Rajiv V. Joshi, Keunwoo Kim, Richard Williams, Sani R. Nassif: Statistical Evaluation of Split Gate Opportunities for Improved 8T/6T Column-Decoupled SRAM Cell Yield. ISQED 2008: 702-707
- [c10]Aditya Bansal, Jae-Joon Kim, Keunwoo Kim, Saibal Mukhopadhyay, Ching-Te Chuang, Kaushik Roy: Optimal Dual-VT Design in Sub-100 Nanometer PDSOI and Double-Gate Technologies. VLSI Design 2008: 125-130
- 2007
- [j2]Saibal Mukhopadhyay, Keunwoo Kim, Jae-Joon Kim, Shih-Hsien Lo, Rajiv V. Joshi, Ching-Te Chuang, Kaushik Roy: Estimation of gate-to-channel tunneling current in ultra-thin oxide sub-50nm double gate devices. Microelectronics Journal 38(8-9): 931-941 (2007)
- [c9]Rajiv V. Joshi, Rouwaida Kanj, Keunwoo Kim, Richard Q. Williams, Ching-Te Chuang: A floating-body dynamic supply boosting technique for low-voltage sram in nanoscale PD/SOI CMOS technologies. ISLPED 2007: 8-13
- [c8]Saibal Mukhopadhyay, Keunwoo Kim, Ching-Te Chuang: Design and analysis of Thin-BOX FD/SOI devices for low-power and stable SRAM in sub-50nm technologies. ISLPED 2007: 20-25
- [c7]Jie Deng, Keunwoo Kim, Ching-Te Chuang, H.-S. Philip Wong: Device Footprint Scaling for Ultra Thin Body Fully Depleted SOI. ISQED 2007: 145-152
- [c6]Rajiv V. Joshi, Keunwoo Kim, Richard Q. Williams, Edward J. Nowak, Ching-Te Chuang: A High-Performance, Low Leakage, and Stable SRAM Row-Based Back-Gate Biasing Scheme in FinFET Technology. VLSI Design 2007: 665-672
- 2006
- [j1]Saibal Mukhopadhyay, Keunwoo Kim, Ching-Te Chuang, Kaushik Roy: Modeling and Analysis of Leakage Currents in Double-Gate Technologies. IEEE Trans. on CAD of Integrated Circuits and Systems 25(10): 2052-2061 (2006)
- 2005
- [c5]Saibal Mukhopadhyay, Keunwoo Kim, Ching-Te Chuang, Kaushik Roy: Modeling and analysis of total leakage currents in nanoscale double gate devices and circuits. ISLPED 2005: 8-13
- [c4]Saibal Mukhopadhyay, Keunwoo Kim, Jae-Joon Kim, Shih-Hsien Lo, Rajiv V. Joshi, Ching-Te Chuang, Kaushik Roy: Modeling and Analysis of Gate Leakage in Ultra-thin Oxide Sub-50nm Double Gate Devices and Circuits. ISQED 2005: 410-415
- 2004
- [c3]Keunwoo Kim, Koushik K. Das, Rajiv V. Joshi, Ching-Te Chuang: Nanoscale CMOS circuit leakage power reduction by double-gate device. ISLPED 2004: 102-107
- 2003
- [c2]Keunwoo Kim, Rajiv V. Joshi, Ching-Te Chuang: Strained-si devices and circuits for low-power applications. ISLPED 2003: 180-183
- [c1]Ching-Te Chuang, Rajiv V. Joshi, Ruchir Puri, Keunwoo Kim: Design Considerations of Scaled Sub-0.1 ?m PD/SOI CMOS Circuits. ISQED 2003: 153-158
Coauthor Index
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last updated on 2012-09-10 16:01 CEST by the dblp team