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 | 2008 | |
|---|---|---|
| j3 |      | Lunchun Guo, Xiaoliang Wang, Cuimei Wang, Hongling Xiao, Junxue Ran, Weijun Luo, Xiaoyan Wang, Baozhu Wang, Cebao Fang, Guoxin Hu: The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure. Microelectronics Journal 39(5): 777-781 (2008) |
| j2 | | Weijun Luo, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Junxue Ran, Lunchun Guo, Jianping Li, Hongxin Liu, Yanling Chen, Fuhua Yang, Jinmin Li: Growth and fabrication of AlGaN/GaN HEMT based on Si(1 1 1) substrates by MOCVD. Microelectronics Journal 39(9): 1108-1111 (2008) |
| j1 | | Weijun Luo, Xiaoliang Wang, Lunchun Guo, Hongling Xiao, Cuimei Wang, Junxue Ran, Jianping Li, Jinmin Li: Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(1 1 1) by MOCVD. Microelectronics Journal 39(12): 1710-1713 (2008) |
| 1 | Yanling Chen | |
| 2 | Cebao Fang | |
| 3 | Guoxin Hu | |
| 4 | Jianping Li | |
| 5 | Jinmin Li | |
| 6 | Hongxin Liu | |
| 7 | Weijun Luo | |
| 8 | Junxue Ran | |
| 9 | Baozhu Wang | |
| 10 | Cuimei Wang | |
| 11 | Xiaoliang Wang | |
| 12 | Xiaoyan Wang | |
| 13 | Hongling Xiao | |
| 14 | Fuhua Yang |
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