Tibor Grasser

Tibor Grasser: Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities. Microelectronics Reliability 52(1): 39-70 (2012)

M. Toledano-Luque, Ben Kaczer, Jacopo Franco, Philippe Roussel, Tibor Grasser, Guido Groeseneken: Defect-centric perspective of time-dependent BTI variability. Microelectronics Reliability 52(9-10): 1883-1890 (2012)

K. Rott, H. Reisinger, Stefano Aresu, Christian Schlünder, K. Kölpin, Wolfgang Gustin, Tibor Grasser: New insights on the PBTI phenomena in SiON pMOSFETs. Microelectronics Reliability 52(9-10): 1891-1894 (2012)

Jacopo Franco, S. Graziano, Ben Kaczer, Felice Crupi, L.-Å. Ragnarsson, Tibor Grasser, Guido Groeseneken: BTI reliability of ultra-thin EOT MOSFETs for sub-threshold logic. Microelectronics Reliability 52(9-10): 1932-1935 (2012)

Stanislav Tyaginov, Ivan Starkov, Hubert Enichlmair, C. Jungemann, Jong Mun Park, E. Seebacher, R. L. de Orio, Hajdin Ceric, Tibor Grasser: An analytical approach for physical modeling of hot-carrier induced degradation. Microelectronics Reliability 51(9-11): 1525-1529 (2011)

Gregor Pobegen, Thomas Aichinger, Tibor Grasser, Michael Nelhiebel: Impact of gate poly doping and oxide thickness on the N- and PBTI in MOSFETs. Microelectronics Reliability 51(9-11): 1530-1534 (2011)

K. Rupp, Ansgar Jüngel, Tibor Grasser: Matrix compression for spherical harmonics expansions of the Boltzmann transport equation for semiconductors. J. Comput. Physics 229(23): 8750-8765 (2010)

Stanislav Tyaginov, Ivan Starkov, Oliver Triebl, Johann Cervenka, C. Jungemann, S. Carniello, Jong Mun Park, Hubert Enichlmair, Markus Karner, Ch. Kernstock, E. Seebacher, Rainer Minixhofer, Hajdin Ceric, Tibor Grasser: Interface traps density-of-states as a vital component for hot-carrier degradation modeling. Microelectronics Reliability 50(9-11): 1267-1272 (2010)

Stanislav Tyaginov, Viktor Sverdlov, Ivan Starkov, Wolfgang Gös, Tibor Grasser: Impact of O-Si-O bond angle fluctuations on the Si-O bond-breakage rate. Microelectronics Reliability 49(9-11): 998-1002 (2009)

Ph. Hehenberger, P.-J. Wagner, H. Reisinger, Tibor Grasser: On the temperature and voltage dependence of short-term negative bias temperature stress. Microelectronics Reliability 49(9-11): 1013-1017 (2009)

M. Vasicek, Viktor Sverdlov, Johann Cervenka, Tibor Grasser, Hans Kosina, Siegfried Selberherr: Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models. LSSC 2009: 443-450

Thomas Aichinger, Michael Nelhiebel, Tibor Grasser: On the temperature dependence of NBTI recovery. Microelectronics Reliability 48(8-9): 1178-1184 (2008)

Stefan Holzer, Alireza Sheikholeslami, Markus Karner, Tibor Grasser, Siegfried Selberherr: Comparison of deposition models for a TEOS LPCVD process. Microelectronics Reliability 47(4-5): 623-625 (2007)

Robert Entner, Tibor Grasser, Oliver Triebl, Hubert Enichlmair, Rainer Minixhofer: Negative bias temperature instability modeling for high-voltage oxides at different stress temperatures. Microelectronics Reliability 47(4-5): 697-699 (2007)

Markus Karner, Andreas Gehring, M. Wagner, R. Entner, Stefan Holzer, Wolfgang Gös, M. Vasicek, Tibor Grasser, Hans Kosina, Siegfried Selberherr: VSP - A gate stack analyzer. Microelectronics Reliability 47(4-5): 704-708 (2007)

Tibor Grasser, Siegfried Selberherr: Editorial. Microelectronics Reliability 47(6): 839-840 (2007)

Michael Spevak, Tibor Grasser: Discretization of Macroscopic Transport Equations on Non-Cartesian Coordinate Systems. IEEE Trans. on CAD of Integrated Circuits and Systems 26(8): 1408-1416 (2007)

Johann Cervenka, W. Wessner, E. Al-Ani, Tibor Grasser, Siegfried Selberherr: Generation of Unstructured Meshes for Process and Device Simulation by Means of Partial Differential Equations. IEEE Trans. on CAD of Integrated Circuits and Systems 25(10): 2118-2128 (2006)

Stephan Wagner, Tibor Grasser, Claus Fischer, Siegfried Selberherr: An advanced equation assembly module. Eng. Comput. (Lond.) 21(2): 151-163 (2005)

Stefan Holzer, Rainer Minixhofer, Clemens Heitzinger, Johannes Fellner, Tibor Grasser, Siegfried Selberherr: Extraction of material parameters based on inverse modeling of three-dimensional interconnect fusing structures. Microelectronics Journal 35(10): 805-810 (2004)

T. Ayalew, Andreas Gehring, Jong Mun Park, Tibor Grasser, Siegfried Selberherr: Improving SiC lateral DMOSFET reliability under high field stress. Microelectronics Reliability 43(9-11): 1889-1894 (2003)