Gou Fukano

Yuki Fujimura, Osamu Hirabayashi, Takahiko Sasaki, Azuma Suzuki, Atsushi Kawasumi, Yasuhisa Takeyama, Keiichi Kushida, Gou Fukano, Akira Katayama, Yusuke Niki, Tomoaki Yabe: A configurable SRAM with constant-negative-level write buffer for low-voltage operation with 0.149µm² cell in 32nm high-k metal-gate CMOS. ISSCC 2010: 348-349

Osamu Hirabayashi, Atsushi Kawasumi, Azuma Suzuki, Yasuhisa Takeyama, Keiichi Kushida, Takahiko Sasaki, Akira Katayama, Gou Fukano, Yuki Fujimura, Takaaki Nakazato, Yasushi Shizuki, Natsuki Kushiyama, Tomoaki Yabe: A process-variation-tolerant dual-power-supply SRAM with 0.179µm² Cell in 40nm CMOS using level-programmable wordline driver. ISSCC 2009: 458-459