| 2001 | ||
|---|---|---|
| j1 | M. Zmeck, J. C. H. Phang, A. Bettiol, T. Osipowicz, F. Watt, L. J. Balk, Franz-Josef Niedernostheide, Hans-Joachim Schulze, E. Falck, R. Barthelmess: Analysis of high-power devices using proton beam induced charge microscopy. Microelectronics Reliability 41(9-10): 1519-1524 (2001) | |
| 1 | L. J. Balk | |
| 2 | R. Barthelmess | |
| 3 | A. Bettiol | |
| 4 | Franz-Josef Niedernostheide | |
| 5 | T. Osipowicz | |
| 6 | J. C. H. Phang | |
| 7 | Hans-Joachim Schulze | |
| 8 | F. Watt | |
| 9 | M. Zmeck |
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