| 2009 | ||
|---|---|---|
| j2 | M. Dammann, W. Pletschen, Patrick Waltereit, W. Bronner, Rüdiger Quay, S. Müller, Michael Mikulla, Oliver Ambacher, P. J. van der Wel, S. Murad, T. Rödle, R. Behtash, F. Bourgeois, K. Riepe, M. Fagerlind, E. Ö. Sveinbjörnsson: Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems. Microelectronics Reliability 49(5): 474-477 (2009) | |
| 1998 | ||
| j1 | Andreas Thiede, Zhi-Gong Wang, Michael Schlechtweg, M. Lang, P. Leber, Zhihao Lao, Ulrich Nowotny, Volker Hurm, M. Rieger-Motzer, M. Ludwig, M. Sedler, K. Kohler, W. Bronner, J. Hornung, Axel Hülsmann, G. Kaufel, B. Raynor, J. Schneider, T. Jakobus, J. Schroth, Manfred Berroth: Mixed signal integrated circuits based on GaAs HEMTs. IEEE Trans. VLSI Syst. 6(1): 6-17 (1998) | |
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