Volume 52, Number 1, January 2012

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  Peter Ersland, Roberto Menozzi: Editorial. 1
• 
  Charles S. Whitman: Impact of ambient temperature set point deviation on Arrhenius estimates. 2-8
• 
  Michael Ferrara, Michael Stephens, Leslie Marchut, Chris Yang, Ventony Fryar, Preston Scott: Analysis of in situ monitored thermal cycling benefits for wireless packaging early reliability evaluation. 9-15
• 
  William J. Roesch, Dorothy June M. Hamada, David Littleton: Introducing a scale structure to correlate quality and reliability. 16-22
• 
  E. A. Douglas, C. Y. Chang, B. P. Gila, M. R. Holzworth, K. S. Jones, L. Liu, Jinhyung Kim, Soohwan Jang, G. D. Via, Fan Ren, S. J. Pearton: Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors. 23-28
• 
  Milan Tapajna, Nicole Killat, Uttiya Chowdhury, Jose L. Jimenez, Martin Kuball: The role of surface barrier oxidation on AlGaN/GaN HEMTs reliability. 29-32
• 
  Jungwoo Joh, Jesús A. del Alamo: Impact of gate placement on RF power degradation in GaN high electron mobility transistors. 33-38

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  Tibor Grasser: Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities. 39-70
• 
  Ugo Lafont, Henk van Zeijl, Sybrand van der Zwaag: Increasing the reliability of solid state lighting systems via self-healing approaches: A review. 71-89
• 
  Dhafer Abdulameer Shnawah, Mohd Faizul Mohd Sabri, Irfan Anjum Badruddin: A review on thermal cycling and drop impact reliability of SAC solder joint in portable electronic products. 90-99
• 
  Jia-Liang Le: A finite weakest-link model of lifetime distribution of high-k gate dielectrics under unipolar AC voltage stress. 100-106
• 
  Robert Mroczynski, Romuald B. Beck: Reliability issues of double gate dielectric stacks based on hafnium dioxide (HfO₂) layers for non-volatile semiconductor memory (NVSM) applications. 107-111
• 
  P. S. Das, Abhijit Biswas: Investigations on electrical characteristics and reliability properties of MOS capacitors using HfAlO_x on n-GaAs substrates. 112-117
• 
  Valeria Kilchytska, Joaquín Alvarado, S. Put, Nadine Collaert, Eddy Simoen, Cor Claeys, O. Militaru, G. Berger, Denis Flandre: High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs. 118-123
• 
  André Touboul, L. Foro, Frederic Wrobel, Frédéric Saigné: On the reliability assessment of trench fieldstop IGBT under atmospheric neutron spectrum. 124-129
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  Bingxu Ning, Zhengxuan Zhang, Zhangli Liu, Zhiyuan Hu, Ming Chen, Dawei Bi, Shichang Zou: Radiation-induced shallow trench isolation leakage in 180-nm flash memory technology. 130-136
• 
  Jaehyun Cho, Sungwook Jung, Kyungsoo Jang, Hyungsik Park, Jongkyu Heo, Wonbaek Lee, DaeYoung Gong, Seungman Park, Hyungwook Choi, Hanwook Jung, Byoungdeog Choi, Junsin Yi: The effect of gate overlap lightly doped drains on low temperature poly-Si thin film transistors. 137-140
• 
  E. Herth, H. Desré, E. Algré, C. Legrand, T. Lasri: Investigation of optical and chemical bond properties of hydrogenated amorphous silicon nitride for optoelectronics applications. 141-146
• 
  Chao-Hung Chen, Hsien-Chin Chiu, Chih-Wei Yang, Jeffrey S. Fu, Feng-Tso Chien: Novel GaAs enhancement-mode/depletion-mode pHEMTs technology using high-k praseodymium oxide interlayer. 147-150
• 
  Priyanka Malik, R. S. Gupta, Rishu Chaujar, Mridula Gupta: AC analysis of nanoscale GME-TRC MOSFET for microwave and RF applications. 151-158
• 
  Yong Jiang, Li-Lung Lai, Jian-Jun Zhou: Single-bit failure analysis at a nanometer resolution by conductive atomic force microscopy. 159-164
• 
  Toni T. Mattila, Jue Li, Jorma K. Kivilahti: On the effects of temperature on the drop reliability of electronic component boards. 165-179
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  Jenn-Ming Song, Yao-Ren Liu, Yi-Shao Lai, Ying-Ta Chiu, Ning-Cheng Lee: Influence of trace alloying elements on the ball impact test reliability of SnAgCu solder joints. 180-189
• 
  J. S. Karppinen, J. Li, J. Pakarinen, Toni T. Mattila, Mervi Paulasto-Kröckel: Shock impact reliability characterization of a handheld product in accelerated tests and use environment. 190-198
• 
  Takeshi Ito, Isamu Taguchi, Masayasu Soga, Masahiko Mitsuhashi, Toshiro Shinohara, Toshinori Ogashiwa, Takashi Nishimori, Nobuyuki Akiyama: Thermal stability of back side metallization multilayer for power device application. 199-205
• 
  Mingzhi Ni, Ming Li, Dali Mao: Adhesion improvement of Epoxy Molding Compound - Pd Preplated leadframe interface using shaped nickel layers. 206-211
• 
  S. Jacques, A. Caldeira, N. Batut, A. Schellmanns, R. Leroy, L. Gonthier: Lifetime prediction modeling of non-insulated TO-220AB packages with lead-based solder joints during power cycling. 212-216
• 
  Chang-Kyu Chung, Jae-Han Kim, Jong-Won Lee, Kyoung-Won Seo, Kyung-Wook Paik: Enhancement of electrical stability of anisotropic conductive film (ACF) interconnections with viscosity-controlled and high T_g ACFs in fine-pitch chip-on-glass applications. 217-224
• 
  Kyoung-Lim Suk, Ho-Young Son, Chang-Kyu Chung, Joong Do Kim, Jin-Woo Lee, Kyung-Wook Paik: Flexible Chip-on-Flex (COF) and embedded Chip-in-Flex (CIF) packages by applying wafer level package (WLP) technology using anisotropic conductive films (ACFs). 225-234
• 
  Olivér Krammer, László Milán Molnár, László Jakab, András Szabó: Modelling the effect of uneven PWB surface on stencil bending during stencil printing process. 235-240
• 
  C. Y. Khor, M. Z. Abdullah, H. J. Tony Tan, W. C. Leong, D. Ramdan: Investigation of the fluid/structure interaction phenomenon in IC packaging. 241-252
• 
  O. Thomas, C. Hunt, M. Wickham: Finite difference modelling of moisture diffusion in printed circuit boards with ground planes. 253-261
• 
  W. L. Lu, Y. M. Hwang: Analysis of a vibration-induced micro-generator with a helical micro-spring and induction coil. 262-270
• 
  R. Ardito, A. Frangi, A. Corigliano, B. De Masi, G. Cazzaniga: The effect of nano-scale interaction forces on the premature pull-in of real-life Micro-Electro-Mechanical Systems. 271-281
• 
  F. Fiori: On the use of high-impedance power supplies to reduce the substrate switching noise in system-on-chips. 282-288
• 
  M. Bagatin, Simone Gerardin, Alessandro Paccagnella, C. Andreani, G. Gorini, C. D. Frost: Temperature dependence of neutron-induced soft errors in SRAMs. 289-293
• 
  Pawel Salek, Lidia Lukasiak, Andrzej Jakubowski: New threshold voltage definition for undoped symmetrical DG MOSFET. 294-295
• 
  S. Tarasovs, J. Andersons: Competition between the buckling-driven delamination and wrinkling in compressed thin coatings. 296-299
• 
  Vojkan Davidovic: Reliability Physics and Engineering: Time-to-Failure Modeling, J.W. McPherson. Springer (2010). 318 pp., ISBN: 978-1-4419-6347-5. 300

Volume 52, Number 2, February 2012

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  Tadatomo Suga, Jenn-Ming Song, Yi-Shao Lai: Guest Editorial - Low Temperature Processing for Microelectronics and Microsystems Packaging. 301
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  Cheng-Ta Ko, Kuan-Neng Chen: Low temperature bonding technology for 3D integration. 302-311
• 
  Ya-Sheng Tang, Yao-Jen Chang, Kuan-Neng Chen: Wafer-level Cu-Cu bonding technology. 312-320
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  C. S. Tan, Dau Fatt Lim, Xiao Fang Ang, J. Wei, K. C. Leong: Low temperature Cu-Cu thermo-compression bonding with temporary passivation of self-assembled monolayer and its bond strength enhancement. 321-324
• 
  Ki Yeol Byun, Cindy Colinge: Overview of low temperature hydrophilic Ge to Si direct bonding for heterogeneous integration. 325-330
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  H. Moriceau, F. Rieutord, F. Fournel, Léa Di Cioccio, C. Moulet, L. Libralesso, Pierric Gueguen, Rachid Taibi, C. Deguet: Low temperature direct bonding: An attractive technique for heterostructures build-up. 331-341
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  Ryuichi Kondou, Chenxi Wang, Akitsu Shigetou, Tadatomo Suga: Nanoadhesion layer for enhanced Si-Si and Si-SiN wafer bonding. 342-346
• 
  Chenxi Wang, Tadatomo Suga: Investigation of fluorine containing plasma activation for room-temperature bonding of Si-based materials. 347-351
• 
  S. L. Lin, W. C. Huang, C. T. Ko, Kuan-Neng Chen: BCB-to-oxide bonding technology for 3D integration. 352-355
• 
  Hermann Oppermann, Lothar Dietrich: Nanoporous gold bumps for low temperature bonding. 356-360
• 
  Matiar M. R. Howlader, Thomas E. Doyle: Low temperature nanointegration for emerging biomedical applications. 361-374
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  K. Suganuma, S. Sakamoto, N. Kagami, D. Wakuda, K. S. Kim, M. Nogi: Low-temperature low-pressure die attach with hybrid silver particle paste. 375-380
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  Y. J. Chen, C. C. Chang, H. Y. Lin, S. C. Hsu, C. Y. Liu: Fabrication of vertical thin-GaN light-emitting diode by low-temperature Cu/Sn/Ag wafer bonding. 381-384
• 
  Chi-Pu Lin, Chih-Ming Chen: Solid-state interfacial reactions at the solder joints employing Au/Pd/Ni and Au/Ni as the surface finish metallizations. 385-390
• 
  Yu-Feng Liu, Weng-Sing Hwang, Yen-Fang Pai, Ming-Hsu Tsai: Low temperature fabricated conductive lines on flexible substrate by inkjet printing. 391-397
• 
  Yih-Ming Liu, Nen-Wen Pu, Wen-Ding Chen, Kun-Hong Lin, Yuh Sung, Ming-Der Ger, Ching-Liang Chang, Te-Liand Tseng: Low temperature fabrication of Ni-P metallic patterns on ITO substrates utilizing inkjet printing. 398-404
• 
  Aminul Islam, Mohd. Hasan: A technique to mitigate impact of process, voltage and temperature variations on design metrics of SRAM Cell. 405-411
• 
  W. Heo, N.-E. Lee: Effect of additive N₂ and Ar gases on surface smoothening and fracture strength of Si wafers during high-speed chemical dry thinning. 412-417
• 
  R. K. Mamedov, M. A. Yeganeh: Current transport and formation of energy structures in narrow Au/n-GaAs Schottky diodes. 418-424
• 
  Feng-Renn Juang, Yean-Kuen Fang, Hung-Yu Chiu: Dependence of the Au/SnO_x/n-LTPS/glass thin film MOS Schottky diode CO gas sensing performances on operating temperature. 425-429
• 
  Ákos Nemcsics, Andrea Stemmann, Jeno Takács: To the understanding of the formation of the III-V based droplet epitxial nanorings. 430-433
• 
  Zhihua Dong, Jinyan Wang, C. P. Wen, Shenghou Liu, Rumin Gong, Min Yu, Yilong Hao, Fujun Xu, Bo Shen, Yangyuan Wang: High temperature induced failure in Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructure. 434-438
• 
  Sachin Kumar, Nikhil M. Vichare, Eli Dolev, Michael Pecht: A health indicator method for degradation detection of electronic products. 439-445
• 
  Feifei He, Cher Ming Tan: Electromigration reliability of interconnections in RF low noise amplifier circuit. 446-454
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  J. W. Jang, L. Li, P. Bowles, R. Bonda, D. R. Frear: High-lead flip chip bump cracking on the thin organic substrate in a module package. 455-460

Volume 52, Number 3, March 2012

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  Vitezslav Benda: Progress in power semiconductor devices. 461-462

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  P. Pribytny, D. Donoval, A. Chvála, J. Marek, M. Molnar: Electro-thermal analysis and optimization of edge termination of power diode supported by 2D numerical modeling and simulation. 463-468
• 
  J. Hájek, V. Papez, B. Kojecký: Investigation of flicker noise in silicon diodes under reverse bias. 469-474
• 
  Josef Lutz, Roman Baburske: Dynamic avalanche in bipolar power devices. 475-481
• 
  Nishad Patil, Diganta Das, Michael G. Pecht: A prognostic approach for non-punch through and field stop IGBTs. 482-488
• 
  E. Marcault, M. Breil, A. Bourennane, Patrick Tounsi, Jean-Marie Dorkel: Study of mechanical stress impact on the I-V characteristics of a power VDMOS device using 2D FEM simulations. 489-496
• 
  B. T. Donnellan, G. J. Roberts, P. A. Mawby, A. T. Bryant: Modelling of current sharing in paralleled current limiting superjunction MOSFETs with common gate drives. 497-502
• 
  I. Cortés, G. Toulon, F. Morancho, E. Hugonnard-Bruyere, B. Villard, W. J. Toren: Analysis and optimization of lateral thin-film Silicon-on-insulator (SOI) MOSFET transistors. 503-508
• 
  Ralf Siemieniec, Gerhard Nöbauer, Daniel Domes: Stability and performance analysis of a SiC-based cascode switch and an alternative solution. 509-518

• 
  Renan Trevisoli Doria, João Antonio Martino, Eddy Simoen, Cor Claeys, Marcelo Antonio Pavanello: An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devices. 519-524
• 
  Pavel Poliakov, Pieter Blomme, Alessandro Vaglio Pret, Miguel Corbalan Miranda, Roel Gronheid, Diederik Verkest, Jan Van Houdt, Wim Dehaene: Trades-off between lithography line edge roughness and error-correcting codes requirements for NAND Flash memories. 525-529
• 
  A. S. Budiman, H.-A.-S. Shin, B.-J. Kim, S.-H. Hwang, H.-Y. Son, M.-S. Suh, Q.-H. Chung, K.-Y. Byun, N. Tamura, M. Kunz, Y.-C. Joo: Measurement of stresses in Cu and Si around through-silicon via by synchrotron X-ray microdiffraction for 3-dimensional integrated circuits. 530-533
• 
  E. J. Cheng, Y.-L. Shen: Thermal expansion behavior of through-silicon-via structures in three-dimensional microelectronic packaging. 534-540
• 
  Dao-Long Chen, Ping-Feng Yang, Yi-Shao Lai: A review of three-dimensional viscoelastic models with an application to viscoelasticity characterization using nanoindentation. 541-558
• 
  Liang Zhang, Cheng-wen He, Yong-huan Guo, Ji-guang Han, Yong-wei Zhang, Xu-yan Wang: Development of SnAg-based lead free solders in electronics packaging. 559-578
• 
  Fangjie Cheng, Feng Gao, Yan Wang, Yunlong Wu, Zhaolong Ma, Junxiang Yang: Sn addition on the tensile properties of high temperature Zn-4Al-3Mg solder alloys. 579-584
• 
  Tingbi Luo, Anmin Hu, Jing Hu, Ming Li, Dali Mao: Microstructure and mechanical properties of Sn-Zn-Bi-Cr lead-free solder. 585-588
• 
  Daquan Yu: Development of reliable low temperature wafer level hermetic bonding using composite seal joint. 589-594
• 
  Jiwon Kim, Byung-seung Yim, Jongmin Kim, Jooheon Kim: The effects of functionalized graphene nanosheets on the thermal and mechanical properties of epoxy composites for anisotropic conductive adhesives (ACAs). 595-602
• 
  Janusz Smulko, Kazimierz Józwiak, Marek Olesz: Quality testing methods of foil-based capacitors. 603-609

Volume 52, Number 4, April 2012

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  Hei Wong: Advances in non-volatile memory technology. 611-612

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  Takayuki Kawahara, Kenchi Ito, Riichiro Takemura, Hideo Ohno: Spin-transfer torque RAM technology: Review and prospect. 613-627
• 
  Alexander Makarov, Viktor Sverdlov, Siegfried Selberherr: Emerging memory technologies: Trends, challenges, and modeling methods. 628-634
• 
  Jer-Chyi Wang, Chih-Ting Lin, Pai-Chi Chou, Chao-Sung Lai: Gadolinium-based metal oxide for nonvolatile memory applications. 635-641
• 
  E. Atanassova, Albena Paskaleva, D. Spassov: Doped Ta₂O₅ and mixed HfO₂-Ta₂O₅ films for dynamic memories applications at the nanoscale. 642-650
• 
  HongYu Yu, Yuan Sun, Navab Singh, Guo-Qiang Lo, Dim-Lee Kwong: Perspective of flash memory realized on vertical Si nanowires. 651-661
• 
  Jong-Ho Lee, Sang-Goo Jung: NAND flash memory technology utilizing fringing electric field. 662-669
• 
  Oi-Ying Wong, H. Wong, Wing-Shan Tam, Ted Chi-Wah Kok: A comparative study of charge pumping circuits for flash memory applications. 670-687
• 
  C. Dou, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, A. Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai: Resistive switching behavior of a CeO₂ based ReRAM cell incorporated with Si buffer layer. 688-691

• 
  Shengdong Hu, Jun Luo, Kaizhou Tan, Ling Zhang, Zhaoji Li, Bo Zhang, Jianlin Zhou, Ping Gan, Guolin Qin, Zhengyuan Zhang: Realizing high breakdown voltage for a novel interface charges islands structure based on partial-SOI substrate. 692-697
• 
  Chien-Ping Wang, Tzung-Te Chen, Han-Kuei Fu, Tien-Li Chang, Pei-Ting Chou, Mu-Tao Chu: Analysis of thermal characteristics and mechanism of degradation of flip-chip high power LEDs. 698-703
• 
  Wenjian Yu, Qingqing Zhang, Zuochang Ye, Zuying Luo: Efficient statistical capacitance extraction of nanometer interconnects considering the on-chip line edge roughness. 704-710
• 
  R. F. Szeloch, P. Janus, J. Serafinczuk, P. M. Szecówka, G. Józwiak: Characterization of fatigued Al lines by means of SThM and XRD: Analysis using fast Fourier transform. 711-717
• 
  Se Young Yang, Woon-Seong Kwon, Soon-Bok Lee: Chip warpage model for reliability prediction of delamination failures. 718-724
• 
  Chien-Pan Liu, Yen-Fu Liu, Chang-Hung Li, Hung-Chieh Cheng, Yi-Chun Kung, Jeng-Yu Lin: A novel decapsulation technique for failure analysis of epoxy molded IC packages with Cu wire bonds. 725-734
• 
  Yusuf Cinar, Jinwoo Jang, Gunhee Jang, Seonsik Kim, Jaeseok Jang, Jinkyu Chang, Yonghyun Jun: Failure mechanism of FBGA solder joints in memory module subjected to harmonic excitation. 735-743
• 
  W. C. Leong, M. Z. Abdullah, C. Y. Khor: Application of flexible printed circuit board (FPCB) in personal computer motherboards: Focusing on mechanical performance. 744-756
• 
  Yongguang Xiao, Minghua Tang, Jiancheng Li, Bo Jiang, John He: The influence of ferroelectric-electrode interface layer on the electrical characteristics of negative-capacitance ferroelectric double-gate field-effect transistors. 757-760

Volume 52, Number 5, May 2012

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  Cheng-Yi Liu, S.-W. Ricky Lee, Moo Whan Shin, Yi-Shao Lai: Reliability of high-power LED packaging and assembly. 761

• 
  Moon-Hwan Chang, Diganta Das, P. V. Varde, Michael G. Pecht: Light emitting diodes reliability review. 762-782
• 
  S. Tarashioon, A. Baiano, Henk van Zeijl, C. Guo, S. W. Koh, W. D. van Driel, G. Q. Zhang: An approach to "Design for Reliability" in solid state lighting systems at high temperatures. 783-793
• 
  Yen-Fu Su, Shin-Yueh Yang, Tuan-Yu Hung, Chang-Chun Lee, Kuo-Ning Chiang: Light degradation test and design of thermal performance for high-power light-emitting diodes. 794-803
• 
  Matteo Meneghini, Matteo Dal Lago, Nicola Trivellin, Giovanna Mura, Massimo Vanzi, Gaudenzio Meneghesso, Enrico Zanoni: Chip and package-related degradation of high power white LEDs. 804-812
• 
  Jau-Sheng Wang, Chun-Chin Tsai, Jyun-Sian Liou, Wei-Chih Cheng, Shun-Yuan Huang, Gi-Hung Chang, Wood-Hi Cheng: Mean-time-to-failure evaluations of encapsulation materials for LED package in accelerated thermal tests. 813-817
• 
  Ray-Hua Horng, Re-Ching Lin, Yi-Chen Chiang, Bing-Han Chuang, Hung-Lieh Hu, Chen-Peng Hsu: Failure modes and effects analysis for high-power GaN-based light-emitting diodes package technology. 818-821
• 
  C. H. Chen, M. Y. Tsai: Strength determination of high-power LED die using point-load and line-load tests. 822-829
• 
  Jong Hwa Choi, Moo Whan Shin: Thermal investigation of LED lighting module. 830-835
• 
  Minseok Ha, Samuel Graham: Development of a thermal resistance model for chip-on-board packaging of high power LED arrays. 836-844
• 
  M. Y. Tsai, C. H. Chen, C. S. Kang: Thermal measurements and analyses of low-cost high-power LED packages and their modules. 845-854
• 
  C. T. Yang, W. C. Liu, C. Y. Liu: Measurement of thermal resistance of first-level Cu substrate used in high-power multi-chips LED package. 855-860
• 
  Bo-Hung Liou, Chih-Ming Chen, Ray-Hua Horng, Yi-Chen Chiang, Dong-Sing Wuu: Improvement of thermal management of high-power GaN-based light-emitting diodes. 861-865
• 
  Han-Kuei Fu, Chin-Wei Lin, Tzung-Te Chen, Chiu-Ling Chen, Pei-Ting Chou, Chien-Jen Sun: Investigation of dynamic color deviation mechanisms of high power light-emitting diode. 866-871
• 
  Te-yuan Chung, Jian-Hong Jhang, Jing-Sian Chen, Yi-Chien Lo, Gwo-Herng Ho, Mount-Learn Wu, Ching-Cherng Sun: A study of large area die bonding materials and their corresponding mechanical and thermal properties. 872-877
• 
  Ming-Te Lin, Shang-Ping Ying, Ming-Yao Lin, Kuang-Yu Tai, Jyh-Chen Chen: High power LED package with vertical structure. 878-883
• 
  Ming-Jer Jeng, Kuo-Ling Chiang, Hsin-Yi Chang, Chia-Yi Yen, Cheng-Chen Lin, Yuan-Hsiao Chang, Mu-Jen Lai, Yu-Lin Lee, Liann-Be Chang: Heat sink performances of GaN/InGaN flip-chip light-emitting diodes fabricated on silicon and AlN submounts. 884-888
• 
  Yi-Chien Lo, Kuan-Teng Huang, Xuan-Hao Lee, Ching-Cherng Sun: Optical design of a Butterfly lens for a street light based on a double-cluster LED. 889-893
• 
  Hsun-Ching Hsu, Chun-Jung Wang, Hong Ru Lin, Pin Han: Optimized semi-sphere lens design for high power LED package. 894-899
• 
  Lei Chen, Cheng-I. Chu, Ru-Shi Liu: Improvement of emission efficiency and color rendering of high-power LED by controlling size of phosphor particles and utilization of different phosphors. 900-904
• 
  Hui Huang Cheng, De-Shau Huang, Ming-Tzer Lin: Heat dissipation design and analysis of high power LED array using the finite element method. 905-911
• 
  Hung-Yu Chou, Cheng-Chien Chen, Tsung-Hsun Yang: Maintenance of stable light emission in high power LEDs. 912-915
• 
  Jyh-Rong Lin, Tuen Yi Ng, Zhaoxin Wang, Shan Mei Wan, Kin Wai Wong, Ming Lu, Enboa Wu: Wafer-level LED-SiP based mobile flash module and characterization. 916-921
• 
  Rong Zhang, S. W. Ricky Lee: Moldless encapsulation for LED wafer level packaging using integrated DRIE trenches. 922-932
• 
  H. C. Chen, K. J. Chen, C. C. Lin, C. H. Wang, C. C. Yeh, H. H. Tsai, M. H. Shih, H. C. Kuo: Improvement of lumen efficiency in white light-emitting diodes with air-gap embedded package. 933-936
• 
  Bong-Min Song, Bongtae Han, Avram Bar-Cohen, Mehmet Arik, Rajdeep Sharma, Stan Weaver: Life prediction of LED-based recess downlight cooled by synthetic jet. 937-948
• 
  Y. C. Yang, Jinn-Kong Sheu, Ming-Lun Lee, Che-Kang Hsu, Shang-Ju Tu, Shu-Yen Liu, C. C. Yang, Feng-Wen Huang: Vertical InGaN light-emitting diodes with Ag paste as bonding layer. 949-951

Volume 52, Number 6, June 2012

• 
  Michael Pecht: Nvidia's GPU failures: A case for prognostics and health management. 953-957
• 
  N. Lakhdar, Fayçal Djeffal: New optimized Dual-Material (DM) gate design to improve the submicron GaN-MESFETs reliability in subthreshold regime. 958-963
• 
  Gang Xie, Edward Xu, Bo Zhang, Wai Tung Ng: Study of the breakdown failure mechanisms for power AlGaN/GaN HEMTs implemented using a RF compatible process. 964-968
• 
  Che-Kai Lin, Hsien-Chin Chiu, Chao-Wei Lin, Hsuan-Ling Kao, Feng-Tso Chien: Investigation on the thermal behavior of 0.15 μm gate-length In_0.4Al_0.6As/In_0.4Ga_0.6As MHEMT. 969-973
• 
  Vandana Kumari, Manoj Saxena, R. S. Gupta, Mridula Gupta: Temperature dependent drain current model for Gate Stack Insulated Shallow Extension Silicon On Nothing (ISESON) MOSFET for wide operating temperature range. 974-983
• 
  Srabanti Pandit, Binit Syamal, Chandan Kumar Sarkar: Modeling of noise for p-channel DG-FinFETs. 984-988
• 
  Rajni Gautam, Manoj Saxena, R. S. Gupta, Mridula Gupta: Effect of localised charges on nanoscale cylindrical surrounding gate MOSFET: Analog performance and linearity analysis. 989-994
• 
  Yung-Yu Chen, Chih-Ren Hsieh, Fang-Yu Chiu: Stress immunity enhancement of the SiN uniaxial strained n-channel metal-oxide-semiconductor field-effect-transistor by channel fluorine implantation. 995-998
• 
  Hsuan-Ling Kao, Chih-Sheng Yeh, Meng-Ting Chen, Hsien-Chin Chiu, Li-Chun Chang: Characterization and reliability of nMOSFETs on flexible substrates under mechanical strain. 999-1004
• 
  S. Duman, K. Ejderha, Ö. Yigit, A. Türüt: Determination of contact parameters of Ni/n-GaP Schottky contacts. 1005-1011
• 
  Guido Notermans, Sergey Bychikhin, Dionyz Pogany, David Johnsson, Dejan M. Maksimovic: HMM-TLP correlation for system-efficient ESD design. 1012-1019
• 
  Chih-Ting Yeh, Ming-Dou Ker: Study of intrinsic characteristics of ESD protection diodes for high-speed I/O applications. 1020-1030
• 
  A. Chvála, D. Donoval, P. Beno, J. Marek, P. Pribytny, M. Molnar: Analysis of reliability and optimization of ESD protection devices supported by modeling and simulation. 1031-1038
• 
  M. Mamatrishat, T. Kubota, T. Seki, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Yoshinori Kataoka, A. Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai: Oxide and interface trap densities estimation in ultrathin W/La₂O₃/Si MOS capacitors. 1039-1042
• 
  Jibin Fan, Hongxia Liu, Qianwei Kuang, Bo Gao, Fei Ma, Yue Hao: Physical properties and electrical characteristics of H₂O-based and O₃-based HfO₂ films deposited by ALD. 1043-1049
• 
  A. A. Dakhel: W doping effect on the dielectric properties of amorphous Ga₂O₃ films grown on Si substrate for low-k applications. 1050-1054
• 
  Yong-Shiuan Tsair, Yean-Kuen Fang, Feng-Renn Juang, Yu-Hsiung Wang, Wen-Ting Chu, Yung-Tao Lin, Luan Tran: A novel method to improve cell endurance window in source-side injection split gate flash memory. 1055-1059
• 
  C. Zambelli, Andrea Chimenton, Piero Olivo: Modeling of SET seasoning effects in Phase Change Memory arrays. 1060-1064
• 
  Shyue-Kung Lu, Tin-Wei Chang, Han-Yu Hsu: Yield enhancement techniques for 3-dimensional random access memories. 1065-1070
• 
  J. C. Hsieh, H. J. Huang, S. C. Shen: Experimental study of microrectangular groove structure covered with multi mesh layers on performance of flat plate heat pipe for LED lighting module. 1071-1079
• 
  Bing-Liang Chen, Pao-Cheng Huang, Ling-Sheng Jang, Ming-Kun Chen: Electrical failure analysis of peristaltic micropumps fabricated with PZT actuators. 1080-1085
• 
  Wenbin Wang, Shuxin Luo, Michael G. Pecht: Economic design of the mean prognostic distance for canary-equipped electronic systems. 1086-1091
• 
  Peisheng Liu, Liangyu Tong, Jinlan Wang, Lei Shi, Hao Tang: Challenges and developments of copper wire bonding technology. 1092-1098
• 
  Hassen Medjahed, Paul-Etienne Vidal, Bertrand Nogarede: Thermo-mechanical stress of bonded wires used in high power modules with alternating and direct current modes. 1099-1104
• 
  Fuliang Wang, Yun Chen, Lei Han: Experiment study of dynamic looping process for thermosonic wire bonding. 1105-1111
• 
  Hongtao Chen, Jing Han, Jue Li, Mingyu Li: Inhomogeneous deformation and microstructure evolution of Sn-Ag-based solder interconnects during thermal cycling and shear testing. 1112-1120
• 
  Peter Borgesen, Liang Yin, Pericles Kondos: Acceleration of the growth of Cu₃Sn voids in solder joints. 1121-1127
• 
  Jin Hyuk Gang, Dawn An, Jin Won Joo, Joo Ho Choi: Uncertainty analysis of solder alloy material parameters estimation based on model calibration method. 1128-1137
• 
  Tamás Hurtony, Attila Bonyár, Péter Gordon, Gábor Harsányi: Investigation of intermetallic compounds (IMCs) in electrochemically stripped solder joints with SEM. 1138-1142
• 
  Chun-Sean Lau, M. Z. Abdullah, F. Che Ani: Optimization modeling of the cooling stage of reflow soldering process for ball grid array package using the gray-based Taguchi method. 1143-1152
• 
  Xu Zeng, Hong-Qi Sun, Yan-Feng He, Xin-Ping Qu: Reflow discoloration formation on pure tin (Sn) surface finish. 1153-1156
• 
  Wenjing Zhang, Wei Luo, Anmin Hu, Ming Li: Adhesion improvement of Cu-based substrate and epoxy molding compound interface by hierarchical structure preparation. 1157-1164
• 
  Byung-seung Yim, Yumi Kwon, Seung Hoon Oh, Jooheon Kim, Yong-Eui Shin, Seong Hyuk Lee, Jongmin Kim: Characteristics of solderable electrically conductive adhesives (ECAs) for electronic packaging. 1165-1173
• 
  Kyung-Woon Jang, Jin-Hyoung Park, Soon-Bok Lee, Kyung-Wook Paik: A study on thermal cycling (T/C) reliability of anisotropic conductive film (ACF) flip chip assembly for thin chip-on-board (COB) packages. 1174-1181
• 
  Kyoung-Lim Suk, Kyosung Choo, Sung Jin Kim, Jong-Soo Kim, Kyung-Wook Paik: Studies on various chip-on-film (COF) packages using ultra fine pitch two-metal layer flexible printed circuits (two-metal layer FPCs). 1182-1188
• 
  Fei Su, Ronghai Mao, Ji Xiong, Kun Zhou, Zheng Zhang, Jiang Shao, Cunyi Xie: On thermo-mechanical reliability of plated-through-hole (PTH). 1189-1196
• 
  Farshad Firouzi, Ali Azarpeyvand, Mostafa E. Salehi, Sied Mehdi Fakhraie: Adaptive fault-tolerant DVFS with dynamic online AVF prediction. 1197-1208
• 
  Haiqing Nan, Ken Choi: Low cost and highly reliable hardened latch design for nanoscale CMOS technology. 1209-1214
• 
  Hossein Asadi, Mehdi Baradaran Tahoori, Mahdi Fazeli, Seyed Ghassem Miremadi: Efficient algorithms to accurately compute derating factors of digital circuits. 1215-1226
• 
  Jianjun Chen, Shuming Chen, Bin Liang, Biwei Liu, Fanyu Liu: Radiation hardened by design techniques to reduce single event transient pulse width based on the physical mechanism. 1227-1232
• 
  Farouk Smith: Single event upset mitigation by means of a sequential circuit state freeze. 1233-1240
• 
  Lei Li, Jianhao Hu: Fault model for on-chip communication and joint equalization and special spacing rules for on-chip bus design. 1241-1246
• 
  Aminul Islam, Mohd. Hasan: Variability aware low leakage reliable SRAM cell design technique. 1247-1252

Volume 52, Number 7, July 2012

• 
  Artur Wymyslowski: 2011 EuroSimE international conference on thermal, mechanical and multi-physics simulation and experiments in micro-electronics and micro-systems. 1253-1254

• 
  Rainer Dudek, Reinhard Pufall, Bettina Seiler, Bernd Michel: Studies on the reliability of power packages based on strength and fracture criteria. 1255-1265
• 
  Reinhard Pufall, Michael Goroll, J. Mahler, Werner Kanert, M. Bouazza, Olaf Wittler, Rainer Dudek: Degradation of moulding compounds during highly accelerated stress tests - A simple approach to study adhesion by performing button shear tests. 1266-1271
• 
  Heinz Pape, Dirk Schweitzer, Liu Chen, Rudolf Kutscherauer, Martin Walder: Development of a standard for transient measurement of junction-to-case thermal resistance. 1272-1278
• 
  R. H. Poelma, H. Sadeghian, S. Koh, G. Q. Zhang: Effects of single vacancy defect position on the stability of carbon nanotubes. 1279-1284
• 
  O. Hölck, Jörg Bauer, Olaf Wittler, Bernd Michel, Bernhard Wunderle: Comparative characterization of chip to epoxy interfaces by molecular modeling and contact angle determination. 1285-1290
• 
  Nancy Iwamoto: Developing the stress-strain curve to failure using mesoscale models parameterized from molecular models. 1291-1299
• 
  E. R. Weltevreden, S. J. Tesarski, Artur Wymyslowski, M. Erinc, A. W. J. Gielen: A multi-scale approach of the thermo-mechanical properties of silica-filled epoxies used in electronic packaging. 1300-1305

• 
  Guang Zeng, Stuart D. McDonald, Kazuhiro Nogita: Development of high-temperature solders: Review. 1306-1322
• 
  J. Kovác, A. Satka, A. Chvála, D. Donoval, P. Kordos, S. Delage: Gate leakage current in GaN-based mesa- and planar-type heterostructure field-effect transistors. 1323-1327
• 
  Yang-Hua Chang, Chun-Teng Huang: A collector current model for InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors with non-ideal effects. 1328-1331
• 
  Fu-Kwun Wang, Tao-Peng Chu: Lifetime predictions of LED-based light bars by accelerated degradation test. 1332-1336
• 
  Yue Xu, Feng Yan, ZhiGuo Li, Fan Yang, Jianguang Chang, Yonggang Wang: Investigation of STI edge effect on programming disturb in localized charge trapping SONOS flash memory cells. 1337-1341
• 
  Magali Estrada, Antonio Cerdeira, Benjamín Iñíguez: Effect of interface charge on the dc bias stress-induced deformation and shift of the transfer characteristic of amorphous oxide thin-film transistors. 1342-1345
• 
  Myung Ju Kim, Duck-kyun Choi: Effect of enhanced-mobility current path on the mobility of AOS TFT. 1346-1349
• 
  M. Enver Aydin, F. Yakuphanoglu: Electrical characterization of inorganic-on-organic diode based InP and poly(3, 4-ethylenedioxithiophene)/poly(styrenesulfonate) (PEDOT: PSS). 1350-1354
• 
  Murat Soylu, Fahrettin Yakuphanoglu, I. S. Yahia: Fabrication and electrical characteristics of Perylene-3, 4, 9, 10-tetracarboxylic dianhydride/p-GaAs diode structure. 1355-1361
• 
  Sakir Aydogan, M. Saglam, Abdulmecit Türüt: Effect of temperature on the capacitance-frequency and conductance-voltage characteristics of polyaniline/p-Si/Al MIS device at high frequencies. 1362-1366
• 
  Dehua Xiong, Hong Li, Jinshu Cheng: Surface and interface characterization of oxygen plasma activated anodic bonding of glass-ceramics to stainless steel. 1367-1372
• 
  Kai Li, Wenyuan Chen, Weiping Zhang: Design, modeling and analysis of highly reliable capacitive microaccelerometer based on circular stepped-plate and small-area touch mode. 1373-1381
• 
  Michael McMahon, Jeff Jones: A methodology for accelerated testing by mechanical actuation of MEMS devices. 1382-1388
• 
  Julian W. Post, A. Bhattacharyya: Burn-in and thermal cyclic tests to determine the short-term reliability of a thin film resistance temperature detector. 1389-1395
• 
  Mahdiar Hosein Ghadiry, Asrulnizam Bin Abd Manaf, Mahdieh Nadi Senjani, Meisam Rahmani, M. T. Ahmadi: Ionization coefficient of monolayer graphene nanoribbon. 1396-1400
• 
  Mark D. Placette, Xuejun Fan, Jie-Hua Zhao, Darvin Edwards: Dual stage modeling of moisture absorption and desorption in epoxy mold compounds. 1401-1408
• 
  Kenny C. Otiaba, R. S. Bhatti, Ndy N. Ekere, S. Mallik, M. O. Alam, Emeka H. Amalu, M. Ekpu: Numerical study on thermal impacts of different void patterns on performance of chip-scale packaged power device. 1409-1419
• 
  Michael Reid, Maurice N. Collins, Eric E. Dalton, Jeff M. Punch, David A. Tanner: Testing method for measuring corrosion resistance of surface mount chip resistors. 1420-1427
• 
  Wei-Luen Jang, Tai-Siang Wang, Yen-Fen Lai, Kwang-Lung Lin, Yi-Shao Lai: The performance and fracture mechanism of solder joints under mechanical reliability test. 1428-1434
• 
  Yoshihiko Kanda, Yoshiharu Kariya: Evaluation of creep properties for Sn-Ag-Cu micro solder joint by multi-temperature stress relaxation test. 1435-1440
• 
  Yunsung Kim, Hyelim Choi, Hyoungjoo Lee, Dongjun Shin, Jinhan Cho, Heeman Choe: Improved reliability of copper-cored solder joints under a harsh thermal cycling condition. 1441-1444
• 
  Jussi Hokka, Jue Li, Toni T. Mattila, Mervi Paulasto-Kröckel: The reliability of component boards studied with different shock impact repetition frequencies. 1445-1453
• 
  Siva P. V. Nadimpalli, Jan K. Spelt: Prediction of pad cratering fracture at the copper pad - Printed circuit board interface. 1454-1463
• 
  Tz-Cheng Chiu, Chun-Hui Chen: A numerical procedure for simulating delamination growth on interfaces of interconnect structures. 1464-1474
• 
  Bo Wang, Jiajun Li, Anthony Gallagher, James Wrezel, Pongpinit Towashirporn, Naiqin Zhao: Drop impact reliability of Sn-1.0Ag-0.5Cu BGA interconnects with different mounting methods. 1475-1482
• 
  Rita Faddoul, Nadège Reverdy-Bruas, Anne Blayo, Thomas Haas, Christian Zeilmann: Optimisation of silver paste for flexography printing on LTCC substrate. 1483-1491
• 
  Chao-Ton Su, Chia-Ming Lin, C. Alec Chang: Optimization of the bistability property for flexible display by an integrated approach using Taguchi methods, neural networks and genetic algorithms. 1492-1500
• 
  Soon-Wan Chung, Hyun-Tae Kim: Interfacial reliability between hot-melt polyamides resin and textile for wearable electronics application. 1501-1510
• 
  Baojun Liu, Li Cai, Peng Bai, Weidong Peng: Reliability evaluation for single event crosstalk via probabilistic transfer matrix. 1511-1514
• 
  Saurabh Kothawade, Koushik Chakraborty, Sanghamitra Roy, Yiding Han: Analysis of intermittent timing fault vulnerability. 1515-1522
• 
  Wu-Hu Li, S. W. Joelle Ong: Cu diffusion in Ag-plated Cu leadframe packages. 1523-1527
• 
  Pedro Reviriego, Costas Argyrides, Juan Antonio Maestro: Efficient error detection in Double Error Correction BCH codes for memory applications. 1528-1530

Volume 52, Number 8, August 2012

• 
  Asen Asenov, Ulf Schlichtmann, Cher Ming Tan, Hei Wong, Xing Zhou: ICMAT 2011 - Reliability and variability of semiconductor devices and ICs. 1531

• 
  Hajdin Ceric, Roberto Lacerda de Orio, Siegfried Selberherr: Interconnect reliability dependence on fast diffusivity paths. 1532-1538
• 
  Cher Ming Tan, Wei Li, Zhenghao Gan: Applications of finite element methods for reliability study of ULSI interconnections. 1539-1545
• 
  Dominik Lorenz, Martin Barke, Ulf Schlichtmann: Efficiently analyzing the impact of aging effects on large integrated circuits. 1546-1552
• 
  Meng Keong Lim, Jingyuan Lin, Yong Chiang Ee, Chee Mang Ng, Jun Wei, Chee Lip Gan: Experimental characterization and modelling of electromigration lifetime under unipolar pulsed current stress. 1553-1558
• 
  Xin Pan, Helmut Graeb: Reliability optimization of analog integrated circuits considering the trade-off between lifetime and area. 1559-1564
• 
  Bogdan Tudor, Joddy Wang, Zhaoping Chen, Robin Tan, Weidong Liu, Frank Lee: An accurate MOSFET aging model for 28 nm integrated circuit simulation. 1565-1570
• 
  Josef Watts, Henry Trombley: Including spatial correlations of channel length and threshold voltage variation in circuit simulations. 1571-1574
• 
  Feifei He, Cher Ming Tan: Effect of IC layout on the reliability of CMOS amplifiers. 1575-1580
• 
  A. D. Trigg, Tai Chong Chai, Xiaowu Zhang, Xian Tong Chen, Leong Ching Wai: Modular sensor chip design for package stress evaluation and reliability characterisation. 1581-1585
• 
  S. B. Shashank, Mohd Wajid, Satyam Mandavalli: Fault detection in resistive ladder network with minimal measurements. 1586-1592
• 
  Jian Wu, Shurong Dong, Mingliang Li, Meng Miao, Fei Ma, Jianfeng Zheng, Yan Han: A novel power-clamp assisted complementary MOSFET for robust ESD protection. 1593-1597
• 
  Meng Miao, Shurong Dong, Mingliang Li, Jian Wu, Fei Ma, Jianfeng Zheng, Yan Han: A novel gate-suppression technique for ESD protection. 1598-1601
• 
  Yanjie Wang, Bo-Chao Huang, Ming Zhang, Jason C. S. Woo: Optimizing the fabrication process for high performance graphene field effect transistors. 1602-1605
• 
  S.-L. Siu, Wing-Shan Tam, H. Wong, Chi-Wah Kok, K. Kakusima, Hiroshi Iwai: Influence of multi-finger layout on the subthreshold behavior of nanometer MOS transistors. 1606-1609
• 
  Vandana Kumari, Manoj Saxena, R. S. Gupta, Mridula Gupta: Simulation study of Insulated Shallow Extension Silicon On Nothing (ISESON) MOSFET for high temperature applications. 1610-1612
• 
  B. L. Yang, H. Wong, Kuniyuki Kakushima, Hiroshi Iwai: Improving the electrical characteristics of MOS transistors with CeO₂/La₂O₃ stacked gate dielectric. 1613-1616
• 
  Rakhi Narang, Manoj Saxena, R. S. Gupta, Mridula Gupta: Immunity against temperature variability and bias point invariability in double gate tunnel field effect transistor. 1617-1620
• 
  Matteo Meneghini, Matteo Dal Lago, L. Rodighiero, Nicola Trivellin, Enrico Zanoni, Gaudenzio Meneghesso: Reliability issues in GaN-based light-emitting diodes: Effect of dc and PWM stress. 1621-1626
• 
  Jer-Chyi Wang, Chih-Ting Lin, Chi-Hsien Huang, Chao-Sung Lai, Chin-Hsiang Liao: Charge storage and data retention characteristics of forming gas-annealed Gd₂O₃-nanocrystal nonvolatile memory cell. 1627-1631
• 
  Sihan Joseph Chen, Cher Ming Tan, Boon Khai Eric Chen, Zhi Yong Shaun Chua: Ensuring accuracy in optical and electrical measurement of ultra-bright LEDs during reliability test. 1632-1635
• 
  J. Liu, H. Wong, Sik-Lam Siu, Chi-Wah Kok, V. Filip: Degradation behaviors of GaN light-emitting diodes under high-temperature and high-current stressing. 1636-1639
• 
  Fei Ma, Yan Han, Shurong Dong, Meng Miao, Jianfeng Zheng, Jian Wu, Cheng-gong Han, Kehan Zhu: Investigation of ESD protection strategy in high voltage Bipolar-CMOS-DMOS process. 1640-1644
• 
  Wing-Shan Tam, Sik-Lam Siu, Oi-Ying Wong, Chi-Wah Kok, Hei Wong, V. Filip: Modeling of terminal ring structures for high-voltage power MOSFETs. 1645-1650
• 
  Cheng-En Lue, I-Shun Wang, Chi-Hsien Huang, Yu-Ting Shiao, Hau-Cheng Wang, Chia-Ming Yang, Shu-Hao Hsu, Ching-Yu Chang, William Wang, Chao-Sung Lai: pH sensing reliability of flexible ITO/PET electrodes on EGFETs prepared by a roll-to-roll process. 1651-1654

• 
  Masaoud Houshmand Kaffashian, Reza Lotfi, Khalil Mafinezhad, Hamid Mahmoodi: Impacts of NBTI/PBTI on performance of domino logic circuits with high-k metal-gate devices in nanoscale CMOS. 1655-1659
• 
  Gang Chen, Jerry Yu, P. T. Lai: A study on MIS Schottky diode based hydrogen sensor using La₂O₃ as gate insulator. 1660-1664
• 
  A. R. Maligno, D. C. Whalley, V. V. Silberschmidt: Thermal fatigue life estimation and delamination mechanics studies of multilayered MEMS structures. 1665-1678
• 
  Marco Lanuzza, Raffaele De Rose, Fabio Frustaci, Stefania Perri, Pasquale Corsonello: Comparative analysis of yield optimized pulsed flip-flops. 1679-1689
• 
  R. Sule, P. A. Olubambi, B. T. Abe, O. T. Johnson: Synthesis and characterization of sub-micron sized copper-ruthenium-tantalum composites for interconnection application. 1690-1698
• 
  Wen-Hwa Chen, Ching-Feng Yu, Hsien-Chie Cheng, Su-Tsai Lu: Crystal size and direction dependence of the elastic properties of Cu₃Sn through molecular dynamics simulation and nanoindentation testing. 1699-1710
• 
  M. Sadeghinia, Kaspar M. B. Jansen, Leo J. Ernst: Characterization of the viscoelastic properties of an epoxy molding compound during cure. 1711-1718
• 
  Wojciech Steplewski, Tomasz Serzysko, Grazyna Koziol, Andrzej Dziedzic: Preliminary assessment of the stability of thin- and polymer thick-film resistors embedded into printed wiring boards. 1719-1725
• 
  Zhaohui Chen, Qin Zhang, Kai Wang, Mingxiang Chen, Sheng Liu: Fluid-solid coupling thermo-mechanical analysis of high power LED package during thermal shock testing. 1726-1734
• 
  Rishad A. Shafik, Bashir M. Al-Hashimi, Jeffrey S. Reeve: System-level design optimization of reliable and low power multiprocessor system-on-chip. 1735-1748

• 
  Nicholas Williard, Sony Mathew: Book review: Effective FMEAs. 1749

Volume 52, Numbers 9-10, September - October 2012

• 
  Mauro Ciappa, Paolo Cova, Francesco Iannuzzo, Gaudenzio Meneghesso: Editorial. 1751-1752

• 
  J. W. McPherson: Time dependent dielectric breakdown physics - Models revisited. 1753-1760
• 
  Paul Pfäffli, P. Tikhomirov, X. Xu, I. Avci, Y.-S. Oh, P. Balasingam, S. Krishnamoorthy, T. Ma: TCAD for reliability. 1761-1768
• 
  G. Boselli: ESD design challenges in state-of-the-art analog technologies. 1769-1775

• 
  Marcantonio Catelani, Lorenzo Ciani, G. Barile: A new design technique of TFT-LCD display for avionics application. 1776-1780
• 
  R. Possamai Bastos, F. Sill Torres, Giorgio Di Natale, Marie-Lise Flottes, Bruno Rouzeyre: Novel transient-fault detection circuit featuring enhanced bulk built-in current sensor with low-power sleep-mode. 1781-1786
• 
  Y. Wang, Marius Enachescu, Sorin Dan Cotofana, L. Fang: Variation tolerant on-chip degradation sensors for dynamic reliability management systems. 1787-1791
• 
  N. Cucu Laurenciu, Sorin Dan Cotofana: Context aware slope based transistor-level aging model. 1792-1796
• 
  C. Banc, J. Guinet, E. Doche: High performance electronics in long lifetime, continuous operation, industrial products: The art of balancing conflicting interests. 1797-1802
• 
  L. Cola, M. De Tomasi, R. Enrici Vaion, A. Mervic, P. Zabberoni: Read disturb on flash memories: Study on temperature annealing effect. 1803-1807
• 
  Giorgio De Pasquale, M. Barbato, V. Giliberto, Gaudenzio Meneghesso, Aurelio Somà: Reliability improvement in microstructures by reducing the impact velocity through electrostatic force modulation. 1808-1811
• 
  Clemens Ostermaier, Peter Lagger, Mohammed Alomari, Patrick Herfurth, David Maier, Alexander Alexewicz, Marie-Antoinette di Forte-Poisson, Sylvain L. Delage, Gottfried Strasser, Dionyz Pogany, Erhard Kohn: Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure. 1812-1815
• 
  R. Llido, Pascal Masson, Arnaud Régnier, Vincent Goubier, G. Haller, Vincent Pouget, Dean Lewis: Effects of 1064 nm laser on MOS capacitor. 1816-1821
• 
  Paulo F. Butzen, Vinícius Dal Bem, André Inácio Reis, Renato P. Ribas: Design of CMOS logic gates with enhanced robustness against aging degradation. 1822-1826
• 
  Lutz Meinshausen, Hélène Frémont, Kirsten Weide-Zaage: Migration induced IMC formation in SAC305 solder joints on Cu, NiAu and NiP metal layers. 1827-1832
• 
  Marcantonio Catelani, Lorenzo Ciani: Experimental tests and reliability assessment of electronic ballast system. 1833-1836
• 
  Zhengliang Lv, Linda S. Milor, Shiyuan Yang: Statistical model of NBTI and reliability simulation for analogue circuits. 1837-1842
• 
  S. N. Pagliarini, G. G. dos Santos, Lirida Alves de Barros Naviner, Jean-François Naviner: Exploring the feasibility of selective hardening for combinational logic. 1843-1847
• 
  W. S. Zhao, Y. Zhang, T. Devolder, Jacques-Olivier Klein, Dafine Ravelosona, Claude Chappert, Pascale Mazoyer: Failure and reliability analysis of STT-MRAM. 1848-1852
• 
  E. Nogueira, Manuel Vázquez, J. Mateos: Accelerated life test of high luminosity AlGaInP LEDs. 1853-1858
• 
  D. Othman, M. Bouarroudj-Berkani, Stéphane Lefebvre, A. Ibrahim, Zoubir Khatir, A. Bouzourene: Comparison study on performances and robustness between SiC MOSFET & JFET devices - Abilities for aeronautics application. 1859-1864
• 
  Na Gong, Shixiong Jiang, J. Wang, B. Aravamudhan, K. Sekar, R. Sridhar: Hybrid-cell register files design for improving NBTI reliability. 1865-1869
• 
  Hongbin Shi, F. X. Che, Cuihua Tian, Rui Zhang, Jong Tae Park, Toshitsugu Ueda: Analysis of edge and corner bonded PSvfBGA reliability under thermal cycling conditions by experimental and finite element methods. 1870-1875

• 
  G. Ghidini: Charge-related phenomena and reliability of non-volatile memories. 1876-1882
• 
  M. Toledano-Luque, Ben Kaczer, Jacopo Franco, Philippe Roussel, Tibor Grasser, Guido Groeseneken: Defect-centric perspective of time-dependent BTI variability. 1883-1890
• 
  K. Rott, H. Reisinger, Stefano Aresu, Christian Schlünder, K. Kölpin, Wolfgang Gustin, Tibor Grasser: New insights on the PBTI phenomena in SiON pMOSFETs. 1891-1894
• 
  Philippe Chiquet, Pascal Masson, Romain Laffont, Gilles Micolau, Jérémy Postel-Pellerin, Frédéric Lalande, Bernard Bouteille, Jean-Luc Ogier: Investigation of the effects of constant voltage stress on thin SiO₂ layers using dynamic measurement protocols. 1895-1900
• 
  Dongwoo Kim, Seonhaeng Lee, Cheolgyu Kim, Chiho Lee, Jeongsoo Park, Bongkoo Kang: Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under channel hot-carrier/gate-induced drain leakage alternating stress. 1901-1904
• 
  Seonhaeng Lee, Dongwoo Kim, Cheolgyu Kim, N.-H. Lee, G.-J. Kim, Chiho Lee, Jeongsoo Park, Bongkoo Kang: Effect of electron-electron scattering at an elevated temperature on device lifetime of nanoscale nMOSFETs. 1905-1908
• 
  E. Miranda, Takamasa Kawanago, Kuniyuki Kakushima, J. Suñé, Hiroshi Iwai: Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate-to-drain dielectric breakdown. 1909-1912
• 
  G. T. Sasse, M. Combrié: The temperature dependence of mixed mode degradation in bipolar transistors. 1913-1917
• 
  Louis Gerrer, Stanislav Markov, Salvatore M. Amoroso, Fikru Adamu-Lema, Asen Asenov: Impact of random dopant fluctuations on trap-assisted tunnelling in nanoscale MOSFETs. 1918-1923
• 
  Nuria Ayala, Javier Martín-Martínez, Rosana Rodríguez, M. B. Gonzalez, Montserrat Nafría, X. Aymerich, Eddy Simoen: Characterization and SPICE modeling of the CHC related time-dependent variability in strained and unstrained pMOSFETs. 1924-1927
• 
  Gabriele Navarro, S. Souiki, A. Persico, V. Sousa, J.-F. Nodin, Carine Jahan, F. Aussenac, V. Delaye, O. Cueto, L. Perniola, B. De Salvo: High temperature reliability of μtrench Phase-Change Memory devices. 1928-1931
• 
  Jacopo Franco, S. Graziano, Ben Kaczer, Felice Crupi, L.-Å. Ragnarsson, Tibor Grasser, Guido Groeseneken: BTI reliability of ultra-thin EOT MOSFETs for sub-threshold logic. 1932-1935
• 
  Mingu Kang, Ilgu Yun: Experimental observation of gate geometry dependent characteristic degradations of the multi-finger MOSFETs. 1936-1939
• 
  Song Lan, Cher Ming Tan, Kevin Wu: Reliability study of LED driver - A case study of black box testing. 1940-1944
• 
  Seung Min Lee, Chong-Gun Yu, Seung Min Jeong, Won-Ju Cho, Jong-Tae Park: Drain breakdown voltage: A comparison between junctionless and inversion mode p-channel MOSFETs. 1945-1948
• 
  Seonhaeng Lee, Dongwoo Kim, Cheolgyu Kim, Chiho Lee, Jeongsoo Park, Bongkoo Kang: Channel width dependence of mechanical stress effects induced by shallow trench isolation on device performance of nanoscale nMOSFETs. 1949-1952

• 
  Chang-Chih Chen, Fahad Ahmed, Dae Hyun Kim, Sung Kyu Lim, Linda Milor: Backend dielectric reliability simulator for microprocessor system. 1953-1959
• 
  V. M. Dwyer: Diffusivity variation in Electromigration failure. 1960-1965
• 
  R. Pelzer, Michael Nelhiebel, R. Zink, S. Wöhlert, A. Lassnig, G. Khatibi: High temperature storage reliability investigation of the Al-Cu wire bond interface. 1966-1970
• 
  B. Dimcic, Riet Labie, J. De Messemaeker, Kris Vanstreels, K. Croes, Bert Verlinden, Ingrid De Wolf: Diffusion growth of Cu₃Sn phase in the bump and thin film Cu/Sn structures. 1971-1974
• 
  Y. Abdul Wahab, A. F. Ahmad, H. Hussin, N. Soin: Reduction of annealed-induced wafer defects in dual-damascene copper interconnects. 1975-1980
• 
  R. L. de Orio, Hajdin Ceric, Siegfried Selberherr: Electromigration failure in a copper dual-damascene structure with a through silicon via. 1981-1986
• 
  J. Kludt, Kirsten Weide-Zaage, M. Ackermann, V. Hein: Simulation of the influence of TiAl₃ layers on the thermal-electrical and mechanical behaviour of Al metallizations. 1987-1992
• 
  M. Plappert, O. Humbel, A. Koprowski, M. Nowottnick: Characterization of Ti diffusion in PVD deposited WTi/AlCu metallization on monocrystalline Si by means of secondary ion mass spectroscopy. 1993-1997

• 
  Philippe Galy, J. Bourgeat, J. Jimenez, N. Guitard, A. Dray, G. Troussier, B. Jacquier, D. Marin-Cudraz: Symmetrical ESD trigger and pull-up using BIMOS transistor in advanced CMOS technology. 1998-2004
• 
  Gerhard Groos: Characterisation method for chip card ESD events causing terminal failures. 2005-2009
• 
  M. Cason, G. L. Gobbato, L. Manfredi, M. Nessi, R. Ricci, P. Pulici, C. M. Villa: Thermal overstress of Cu wire under pulsed current condition. 2010-2013
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  Jae-Seong Jeong: Failure mechanism and reliability test method for USB interface circuitry on CPUs for mobile devices. 2014-2018

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  Andrea Irace: Infrared Thermography application to functional and failure analysis of electron devices and circuits. 2019-2023
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  C. Pagano, Christian Boit, Arkadiusz Glowacki, Reiner Leihkauf, Y. Yokoyama: Comparison of FET electro-optical modulation for 1300 nm and 1064 nm laser sources. 2024-2030
• 
  Arkadiusz Glowacki, Christian Boit, Philippe Perdu: Optimum Si thickness for backside detection of photon emission using Si-CCD. 2031-2034
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  A. Sarafianos, R. Llido, Jean-Max Dutertre, O. Gagliano, V. Serradeil, Mathieu Lisart, Vincent Goubier, Assia Tria, Vincent Pouget, Dean Lewis: Building the electrical model of the Photoelectric Laser Stimulation of a PMOS transistor in 90 nm technology. 2035-2038
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  T. Nshanian, P. N. Grillot, M. Holub, S. Watanabe, W. Götz: Effect of residual stress on the electrical activity of dislocations in GaN light emitting diodes. 2039-2042
• 
  M. R. Bruce, L. K. Ross, C. Scholz, L. Joshi, Vrajesh Dave, C. M. Chua: Through silicon in-circuit logic analysis for localizing logic pattern failures. 2043-2049
• 
  Marco Sanna, Matteo Medda: FIB/TEM analysis supported by μ-probing approach to identify via marginality. 2050-2053
• 
  Eddie Redmard, Deny Hanan, Alex Shevachman: Detection of DR violations in ASIC components using photon emission techniques. 2054-2057
• 
  M. Castignolles, S. Alves, P. Rousseille, T. Zirilli: Backside failure analysis application of light scattering for active silicon defect detection. 2058-2063
• 
  Giancarlo Calvagno, Giuseppe Muni, Andrea Jossa, Domenico Mello: Sample Preparation methodology for ultra thin oxide damage in Metal-Insulator-Metal capacitors. 2064-2067
• 
  A. Deyine, E. Doche, F. Battistella, C. Banc: A challenging case study resolved by using the Dynamic Laser Stimulation technique. 2068-2072
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  Jia Lu, BoCheng Cao, WenShe Wu, YuFeng Dai, ChuangJun Huang, G. Mura: MIM capacitor-related early-stage field failures. 2073-2076

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  L. Cinà, Aldo Di Carlo, Andrea Reale: Time resolved temperature profiles of high power HEMTs by photocurrent spectral analysis. 2077-2080
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  A. Watanabe, I. Omura: Real-time failure imaging system under power stress for power semiconductors using Scanning Acoustic Tomography (SAT). 2081-2086
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  G. Bascoul, Philippe Perdu, Maryse Béguin, Dean Lewis: High performance thermography with InGaAs photon counting camera. 2087-2092
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  Isabella Rossetto, Matteo Meneghini, Tiziana Tomasi, Dai Yufeng, Gaudenzio Meneghesso, Enrico Zanoni: Indirect techniques for channel temperature estimation of HEMT microwave transistors: Comparison and limits. 2093-2097
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  Joerg Jatzkowski, Michél Simon-Najasek, Frank Altmann: Novel techniques for dopant contrast analysis on real IC structures. 2098-2103
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  Raoul van Gastel, Gregor Hlawacek, Harold J. W. Zandvliet, Bene Poelsema: Subsurface analysis of semiconductor structures with helium ion microscopy. 2104-2109
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  V. Iglesias, M. Lanza, A. Bayerl, M. Porti, M. Nafría, X. Aymerich, L. F. Liu, J. F. Kang, G. Bersuker, K. Zhang, Z. Y. Shen: Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO₂/Pt structures. 2110-2114
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  Mario Poschgan, Josef Maynollo, Michael Inselsbacher: Inverted high frequency Scanning Acoustic Microscopy inspection of power semiconductor devices. 2115-2119
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  Y. Lu, E. Ramsay, C. R. Stockbridge, A. Yurt, F. H. Köklü, T. G. Bifano, M. S. Ünlü, B. B. Goldberg: Spherical aberration correction in aplanatic solid immersion lens imaging using a MEMS deformable mirror. 2120-2122
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  J. Gaudestad, V. Talanov, P. C. Huang: Space Domain Reflectometry for opens detection location in microbumps. 2123-2126
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  R. L. Torrisi, V. Maiorana, R. Nicolosi, G. Presti: Catastrophic flip-chip failures at thermal cycles caused by micro-cracks in passivation layer, present only in the spacing between minimum width stripes of last metal level. 2127-2134
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  Andreas Rummel, Klaus Schock, Andrew Smith, Stephan Kleindiek: A new approach for making electrically conductive interconnections between small contacts in failure analysis. 2135-2138
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  Mauro Ciappa, Emre Ilgünsatiroglu, Alexey Yu. Illarionov: Monte Carlo simulation of emission site, angular and energy distributions of secondary electrons in silicon at low beam energies. 2139-2143

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  Richard Lossy, Hervé Blanck, Joachim Würfl: Reliability studies on GaN HEMTs with sputtered Iridium gate module. 2144-2148
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  Arvydas Matulionis, Juozapas Liberis, Emilis Sermuksnis, L. Ardaravicius, A. Simukovic, C. Kayis, C. Y. Zhu, R. Ferreyra, Vitaliy Avrutin, Ümit Özgür, Hadis Morkoç: Window for better reliability of nitride heterostructure field effect transistors. 2149-2152
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  Alessandro Chini, F. Soci, Fausto Fantini, A. Nanni, A. Pantellini, Claudio Lanzieri, D. Bisi, Gaudenzio Meneghesso, Enrico Zanoni: Field plate related reliability improvements in GaN-on-Si HEMTs. 2153-2158
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  F. Berthet, Y. Guhel, H. Gualous, B. Boudart, J. L. Trolet, M. Piccione, C. Gaquière: Annihilation of electrical trap effects by irradiating AlGaN/GaN HEMTs with low thermal neutrons radiation fluence. 2159-2163
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  Matteo Dal Lago, Matteo Meneghini, Nicola Trivellin, Giovanna Mura, Massimo Vanzi, Gaudenzio Meneghesso, Enrico Zanoni: Phosphors for LED-based light sources: Thermal properties and reliability issues. 2164-2167
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  S. H. Chen, C. M. Tan, G. H. Tan, F. F. He: Degradation behavior of high power light emitting diode under high frequency switching. 2168-2173
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  So-Ra Gang, Deokgi Kim, Sang-Mook Kim, Nam Hwang, Kwang-Cheol Lee: Improvement in the moisture stability of CaS: Eu phosphor applied in light-emitting diodes by titania surface coating. 2174-2179
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  A. E. Chernyakov, M. E. Levinshtein, P. V. Petrov, N. M. Shmidt, E. I. Shabunina, A. L. Zakheim: Failure mechanisms in blue InGaN/GaN LEDs for high power operation. 2180-2183
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  B. Lambert, Nathalie Labat, D. Carisetti, S. Karboyan, Jean-Guy Tartarin, J. Thorpe, Laurent Brunel, A. Curutchet, N. Malbert, E. Latu-Romain, M. Mermoux: Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test. 2184-2187
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  Denis Marcon, J. Viaene, P. Favia, H. Bender, Xuanwu Kang, S. Lenci, S. Stoffels, Stefaan Decoutere: Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop. 2188-2193
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  P. Marko, Matteo Meneghini, Sergey Bychikhin, D. Marcon, Gaudenzio Meneghesso, Enrico Zanoni, Dionyz Pogany: IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors. 2194-2199
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  B. Lambert, J. Thorpe, R. Behtash, B. Schauwecker, F. Bourgeois, H. Jung, J. Bataille, P. Mezenge, C. Gourdon, C. Ollivier, D. Floriot, H. Blanck: Reliability data's of 0.5 μm AlGaN/GaN on SiC technology qualification. 2200-2204
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  J.-B. Fonder, L. Chevalier, C. Genevois, O. Latry, C. Duperrier, Farid Temcamani, H. Maanane: Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test. 2205-2209
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  Peter Ersland, Shivarajiv Somisetty: Reliability validation of compound semiconductor foundry processes. 2210-2214
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  Suehye Park, Edward Namkyu Cho, Ilgu Yun: Threshold voltage shift prediction for gate bias stress on amorphous InGaZnO thin film transistors. 2215-2219
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