Volume 48, Number 1, January 2008

• 
  Masazumi Amagai: A study of nanoparticles in Sn-Ag based lead free solders. 1-16
• 
  Srimanta Baishya, Abhijit Mallik, Chandan Kumar Sarkar: A threshold voltage model for short-channel MOSFETs taking into account the varying depth of channel depletion layers around the source and drain. 17-22
• 
  J. P. Xu, Y. P. Li, P. T. Lai, W. B. Chen, S. G. Xu, J. G. Guan: A 2D threshold-voltage model for small MOSFET with quantum-mechanical effects. 23-28
• 
  Gilson I. Wirth, Michele G. Vieira, Egas Henes Neto, Fernanda Lima Kastensmidt: Modeling the sensitivity of CMOS circuits to radiation induced single event transients. 29-36
• 
  Alicja Konczakowska: Methodology of semiconductor devices classification into groups of differentiated quality. 37-44
• 
  E. R. Heller, A. Crespo: Electro-thermal modeling of multifinger AlGaN/GaN HEMT device operation including thermal substrate effects. 45-50
• 
  Krzysztof Górecki: A new electrothermal average model of the diode-transistor switch. 51-58
• 
  Z. Stanimirovic, Milan Jevtic, I. Stanimirovic: Simultaneous mechanical and electrical straining of conventional thick-film resistors. 59-67
• 
  K. Weinberg, W. H. Müller: A strategy for damage assessment of thermally stressed copper vias in microelectronic printed circuit boards. 68-82
• 
  Yoshikuni Nakadaira, Seyoung Jeong, Jongbo Shim, Jaiseok Seo, Sunhee Min, Taeje Cho, Sayoon Kang, Seyong Oh: Growth of tin whiskers for lead-free plated leadframe packages in high humid environments and during thermal cycling. 83-104
• 
  Bo Jiang, Ai-Ping Xian: Whisker growth on tin finishes of different electrolytes. 105-110
• 
  K. S. Kim, C. H. Yu, S. W. Han, K. C. Yang, J. H. Kim: Investigation of relation between intermetallic and tin whisker growths under ambient condition. 111-118
• 
  Chao-Yang Mao, Rong-Sheng Chen: Packaging parameter analysis and optimization design on solder joint reliability for twin die stacked packages by variance in strain energy density (SED) of each solder joint. 119-131
• 
  Tong Hong Wang, Yi-Shao Lai, Yu-Cheng Lin: Reliability evaluations for board-level chip-scale packages under coupled power and thermal cycling test conditions. 132-139
• 
  Chi-Hui Chien, Thaiping Chen, Wei-Bang Lin, Chi-Chang Hsieh, Yii-Der Wu, Cheng-Hsiu Yeh: Experimental and statistical study in adhesion features of bonded interfaces of IC packages. 140-148
• 
  Yong Ding, Jang-Kyo Kim: Numerical analysis of ultrasonic wire bonding: Part 2. Effects of bonding parameters on temperature rise. 149-157
• 
  Mile K. Stojcev, Goran Jovanovic: Clock aligner based on delay locked loop with double edge synchronization. 158-166
• 
  Mile K. Stojcev: Navabi Zainalabedin, Verilog Digital System Design: Register Transfer Level Synthesis, Testbench, & Verification (second ed.), McGraw Hill, New York (2006) ISBN 0-07-144564-1 Hardcover, pp 384, plus XVI. 167-168
• 
  Mile K. Stojcev: Douglas L. Perry, Harry D. Foster, Applied Formal Verification. Hardcover, pp 237, Plus XIV. New York: McGraw Hill; 2005, ISBN 0-07-144372-X. 169-170
• 
  Mile K. Stojcev: Joseph D. Dumas II, Computer Architecture: Fundamentals and Principles of Computer Design , CRC Press an imprint of Taylor & Francis Group, Boca Raton (2006) ISBN 0-849-32749-0 Hardcover, pp 372, plus XVI. 171-172

Volume 48, Number 2, February 2008

• 
  I. Cortés, P. Fernández-Martínez, D. Flores, Salvador Hidalgo, J. Rebollo: Analysis of punch-through breakdown in bulk silicon RF power LDMOS transistors. 173-180
• 
  J. P. Xu, F. Ji, P. T. Lai, J. G. Guan: Influence of sidewall spacer on threshold voltage of MOSFET with high-k gate dielectric. 181-186
• 
  W. S. Lau, S. Gunawan, Joy B. H. Tan, B. P. Singh: The application of polyimide/silicon nitride dual passivation to Al_xGa_1-xN/GaN high electron mobility transistors. 187-192
• 
  Sheng-Yi Huang, Kun-Ming Chen, Guo-Wei Huang, Cheng-Chou Hung, Wen-Shiang Liao, Chun-Yen Chang: Electrical stress effect on RF power characteristics of SiGe hetero-junction bipolar transistors. 193-199
• 
  Shiou-Ying Cheng, Ssu-I Fu, Kuei-Yi Chu, Tzu-Pin Chen, Wen-Chau Liu, Li-Yang Chen: Improved performances of a two-step passivated heterojunction bipolar transistor. 200-203
• 
  Stéphane Grauby, M. Amine Salhi, Luis David Patiño Lopez, Wilfrid Claeys, Benoît Charlot, Stefan Dilhaire: Comparison of thermoreflectance and scanning thermal microscopy for microelectronic device temperature variation imaging: Calibration and resolution issues. 204-211
• 
  C. K. Wong, Hei Wong, M. Chan, Y. T. Chow, H. P. Chan: Silicon oxynitride integrated waveguide for on-chip optical interconnects applications. 212-218
• 
  V. Girault, F. Terrier, D. Ney: Reservoir effect in SiCN capped copper/SiO₂ interconnects. 219-224
• 
  O. Belashov, Jan K. Spelt: Thermal stress concentration factors for defects in plated-through-vias. 225-244
• 
  L. Valdevit, V. Khanna, Arun Sharma, Sri M. Sri-Jayantha, David L. Questad, K. Sikka: Organic substrates for flip-chip design: A thermo-mechanical model that accounts for heterogeneity and anisotropy. 245-260
• 
  Ravi Kandasamy, A. S. Mujumdar: Thermal analysis of a flip chip ceramic ball grid array (CBGA) package. 261-273
• 
  Yi-Shao Lai, Po-Chuan Yang, Chang-Lin Yeh: Effects of different drop test conditions on board-level reliability of chip-scale packages. 274-281
• 
  Chang-Lin Yeh, Yi-Shao Lai: Investigations of solder joint damage potentials for board-level chip-scale packages subjected to consecutive drops. 282-292
• 
  J. S. Hwang, M. J. Yim, K. W. Paik: Effects of bonding temperature on the properties and reliabilities of anisotropic conductive films (ACFs) for flip chip on organic substrate application. 293-299
• 
  Seunghyun Cho, Soonjin Cho, Joseph Y. Lee: Estimation of warpage and thermal stress of IVHs in flip-chip ball grid arrays package by FEM. 300-309
• 
  Yaofeng Sun, John H. L. Pang: Digital image correlation for solder joint fatigue reliability in microelectronics packages. 310-318
• 
  Alireza Ejlali, Seyed Ghassem Miremadi: Error propagation analysis using FPGA-based SEU-fault injection. 319-328
• 
  Mile K. Stojcev: Shuvra S. Bhattacharyya, E.F. Deprettere, Jurgen Teich, (Eds.), Domain-Specific Processors: Systems, Architectures, Modeling, and Simulation, Hardcover, pp 261, plus XV, Marcel Dekker, Inc., New York, 2004, ISBN 0-8427-4711-9. 329-330
• 
  Mile K. Stojcev: Sajjan G. Shiva, Advanced Computer Architectures , CRC Press, Francis & Taylor Group, Boca Raton (2006) ISBN 0-8493-3758-5 Hardcover. pp 335, plus XIV. 331-332
• 
  Mile K. Stojcev: Bert Haskell, Portable Electronics Product Design and Development , McGraw Hill, New York (2004) ISBN 0-07-141639-0 Hardcover, pp 372, plus XII. 333-334

Volume 48, Number 3, March 2008

• 
  D. Pic, D. Goguenheim, Jean-Luc Ogier: Assessment of temperature and voltage accelerating factors for 2.3-3.2 nm SiO₂ thin oxides stressed to hard breakdown. 335-341
• 
  Lin-An Yang, Chun-Li Yu, Yue Hao: A new model of subthreshold swing for sub-100 nm MOSFETs. 342-347
• 
  W. Tazibt, P. Mialhe, J. P. Charles, M. A. Belkhir: A junction characterization for microelectronic devices quality and reliability. 348-353
• 
  D. Estrada, M. L. Ogas, R. G. Southwick III, P. M. Price, R. J. Baker, W. B. Knowlton: Impact of single pMOSFET dielectric degradation on NAND circuit performance. 354-363
• 
  S. Lee, J. P. Long, Gerald Lucovsky, J. L. Whitten, H. Seo, J. Lüning: Suppression of Ge-O and Ge-N bonding at Ge-HfO₂ and Ge-TiO₂ interfaces by deposition onto plasma-nitrided passivated Ge substrates: Integration issues Ge gate stacks into advanced devices. 364-369
• 
  J. C. Tinoco, Magali Estrada, Benjamín Iñíguez, Antonio Cerdeira: Conduction mechanisms of silicon oxide/titanium oxide MOS stack structures. 370-381
• 
  Se Woon Kim, Kang Seob Roh, Seung Hwan Seo, Kwan Young Kim, Gu Cheol Kang, Sunyeong Lee, Chang Min Choi, So Ra Park, Jun Hyun Park, Ki Chan Chun, Kwan Jae Song, Dae Hwan Kim, Dong Myong Kim: Extraction of interface states at emitter-base heterojunctions in AlGaAs/GaAs heterostructure bipolar transistors using sub-bandgap photonic excitation. 382-388
• 
  Ping-Feng Yang, Hua-Chiang Wen, Sheng-Rui Jian, Yi-Shao Lai, Sean Wu, Rong-Sheng Chen: Characteristics of ZnO thin films prepared by radio frequency magnetron sputtering. 389-394
• 
  A. A. Dakhel: dc-Conduction mechanism in lanthanum-manganese oxide films grown on p-Si substrate. 395-400
• 
  J. Thijsse, Olaf van der Sluis, J. A. W. van Dommelen, Willem D. van Driel, M. G. D. Geers: Characterization of semiconductor interfaces using a modified mixed mode bending apparatus. 401-407
• 
  K. M. Chen, K. H. Tang, J. S. Liu: Reliability evaluation of BOAC and normal pad stacked-chip packaging using low-K wafers. 408-415
• 
  C. J. Hang, C. Q. Wang, M. Mayer, Y. H. Tian, Y. Zhou, H. H. Wang: Growth behavior of Cu/Al intermetallic compounds and cracks in copper ball bonds during isothermal aging. 416-424
• 
  J. W. Wan, W. J. Zhang, D. J. Bergstrom: Experimental verification of models for underfill flow driven by capillary forces in flip-chip packaging. 425-430
• 
  Qiang Yu, Tadahiro Shibutani, Do-Seop Kim, Yusuke Kobayashi, Jidong Yang, Masaki Shiratori: Effect of process-induced voids on isothermal fatigue resistance of CSP lead-free solder joints. 431-437
• 
  Li Jiang, Keling Yang, Jiemin Zhou, Ke Xiang, Wenjie Wang: Quantification of creep strain in small lead-free solder joints with the in situ micro electronic-resistance measurement. 438-444
• 
  Hyun-Ho Kim, Sang-Hyun Choi, Sang-Hyun Shin, Young-Ki Lee, Seok-Moon Choi, Sung Yi: Thermal transient characteristics of die attach in high power LED PKG. 445-454
• 
  Dwayne R. Shirley, Hamid R. Ghorbani, Jan K. Spelt: Effect of primary creep and plasticity in the modeling of thermal fatigue of SnPb and SnAgCu solder joints. 455-470
• 
  Seung-Hoon Tong, Bong-Jin Yum: A dual burn-in policy for defect-tolerant memory products using the number of repairs as a quality indicator. 471-480
• 
  Kyungmee O. Kim, Hee-Seok Oh: Reliability functions estimated from commonly used yield models. 481-489
• 
  Mile K. Stojcev: Cory L. Clark, LabVIEW Digital Signal Processing and Digital Communications , McGraw Hill, New York (2005) ISBN 0-07-144492-0 205 pp, Hardcover, plus XIII. 490-491
• 
  Mile K. Stojcev: Robert B. Northrop, Introduction to Instrumentation and Measurement, 2/e , CRC Press, Taylor & Francis Group, Boca Raton (2005) ISBN 0-8493-3773-9 743 pp., Hardcover, plus XXI. 492-493
• 
  Mile K. Stojcev: William C. Dunn, Introduction to Instrumentation, Sensor, and Process Control , Artech House, Boston (2005) ISBN 1-58053-011-7 332 pp., Hardcover, plus XIII. 494-495

Volume 48, Number 4, April 2008

• 
  W. S. Lau, Peizhen Yang, C. W. Eng, V. Ho, C. H. Loh, S. Y. Siah, D. Vigar, L. Chan: A study of the linearity between I_on and log I_off of modern MOS transistors and its application to stress engineering. 497-503
• 
  M. Z. Dai, S. I. Kim, Andrew Yap, Shaohua Liu, Arthur Cheng, Leeward Yi: A unification of interface-state generation and hole-injection for hot-carrier-injection stress in low and high-voltage NMOSFET. 504-507
• 
  Qingxue Wang, Lanxia Sun, Andrew Yap: Investigation of hot carrier degradation in asymmetric nDeMOS transistors. 508-513
• 
  E. Atanassova, Albena Paskaleva, N. Novkovski: Effects of the metal gate on the stress-induced traps in Ta₂O₅/SiO₂ stacks. 514-525
• 
  C. X. Li, X. Zou, P. T. Lai, J. P. Xu, C. L. Chan: Effects of Ti content and wet-N₂ anneal on Ge MOS capacitors with HfTiO gate dielectric. 526-530
• 
  N. Arpatzanis, A. T. Hatzopoulos, Dimitrios H. Tassis, C. A. Dimitriadis, Francois Templier, Maher Oudwan, G. Kamarinos: Degradation of n-channel a-Si: H/nc-Si: H bilayer thin-film transistors under DC electrical stress. 531-536
• 
  Han-Chang Tsai: Numerical and experimental analysis of EMI effects on circuits with MESFET devices. 537-546
• 
  A. H. You, P. L. Cheang: Effect of doping concentration on avalanche multiplication and excess noise factor in submicron APD. 547-554
• 
  Jianxin Zhu, Zhihua Chen, Shuyuan Tang: Leaky modes of optical waveguides with varied refractive index for microchip optical interconnect applications - Asymptotic solutions. 555-562
• 
  F. N. Masana: Thermal impedance measurements under non-equilibrium conditions. How to extend its validity. 563-568
• 
  M. H. Lin, M. T. Lin, Tahui Wang: Effects of length scaling on electromigration in dual-damascene copper interconnects. 569-577
• 
  ZhenYu Wu, YinTang Yang, ChangChun Chai, YueJin Li, JiaYou Wang, Jing Liu, Bin Liu: Temperature-dependent stress-induced voiding in dual-damascene Cu interconnects. 578-583
• 
  Michal Tencer: Deposition of aerosol ("hygroscopic dust") on electronics - Mechanism and risk. 584-593
• 
  Jun He, Yongjin Guo, Zhongqin Lin: Theoretical and numerical analysis of the effect of constant velocity on thermosonic bond strength. 594-601
• 
  Xiaowu Zhang, Kripesh Vaidyanathan, Tai Chong Chai, Teck Chun Tan, D. Pinjala: Board level solder joint reliability analysis of a fine pitch Cu post type wafer level package (WLP). 602-610
• 
  C. K. Wong, J. H. L. Pang, J. W. Tew, B. K. Lok, H. J. Lu, F. L. Ng, Y. F. Sun: The influence of solder volume and pad area on Sn-3.8Ag-0.7Cu and Ni UBM reaction in reflow soldering and isothermal aging. 611-621
• 
  O. Nousiainen, L. Lehtiniemi, T. Kangasvieri, R. Rautioaho, J. Vähäkangas: Thermal fatigue endurance of collapsible 95.5Sn4Ag0.5Cu spheres in LTCC/PWB assemblies. 622-630
• 
  Young Woo Lee, Ki Ju Lee, Y. Norman Zhou, Jae Pil Jung: Characteristics of Sn8Zn3Bi solder joints and crack resistance with various PCB and lead coatings. 631-637
• 
  Y. S. Chen, C. S. Wang, Y. J. Yang: Combining vibration test with finite element analysis for the fatigue life estimation of PBGA components. 638-644
• 
  J. S. Hwang: Filler size and content effects on the composite properties of anisotropic conductive films (ACFs) and reliability of flip chip assembly using ACFs. 645-651
• 
  Bo-In Noh, Jong-Bum Lee, Seung-Boo Jung: Effect of surface finish material on printed circuit board for electrochemical migration. 652-656

• 
  Mile K. Stojcev: Dimitris Gizopoulos, Antonis Paschalis and Yervant Zorian, Embedded Processor-Based Self Test , Kluwer Academic Publishers, Dordrecht (2004) ISBN 1-4020-2785-0 217 pp., Hardcover, plus XV. 657-658
• 
  Mile K. Stojcev: Wim Claes, Willy Sansen and Robert Puers, Design of Wireless Autonomous Data-Logger ICs , Springer, Dordrecht (2006) ISBN 1-4020-3208-0 pp 199, Hardcover, plus XVI. 659-660
• 
  Mile K. Stojcev: Amr M. Fahim, Clock Generators for SoC Processors: Circuit and Architectures , Kluwer Academic Publishers, Boston (2005) ISBN 1-4020-8079-4 244 pp., Hardcover, plus XVIII. 661-662

Volume 48, Number 5, May 2008

• 
  Haiyu Qi, Sanka Ganesan, Michael G. Pecht: No-fault-found and intermittent failures in electronic products. 663-674
• 
  David A. Pinsky: The role of dissolved hydrogen and other trace impurities on propensity of tin deposits to grow whiskers. 675-681

• 
  M. K. Bera, C. K. Maiti: Reliability of ultra thin ZrO₂ films on strained-Si. 682-692
• 
  F. Ji, J. P. Xu, P. T. Lai, J. G. Guan: A fringing-capacitance model for deep-submicron MOSFET with high-k gate dielectric. 693-697
• 
  Mohammad Gh. Mohammad, Kewal K. Saluja: Analysis and test procedures for NOR flash memory defects. 698-709
• 
  Gilson I. Wirth: Bulk built in current sensors for single event transient detection in deep-submicron technologies. 710-715
• 
  Hsiao-Tung Ku, Kuo-Ning Chiang: The mechanical stress resistance capability of stress buffer structures in analog devices. 716-723
• 
  Boguslaw Wisz: Coupling capacitances in the planar conductive path system of the hybrid circuit with dielectric layer. 724-733
• 
  Bjorn Vermeersch, Gilbert De Mey: Dependency of thermal spreading resistance on convective heat transfer coefficient. 734-738
• 
  Han Seo Cho, Sukhyeon Cho, Jihong Jo, Haenam Seo, Byongmoon Kim, Jegwang Yoo: Highly reliable processes for embedding discrete passive components into organic substrates. 739-743
• 
  Seol-Min Yi, Kwang-Ho Jang, Jung-Uk An, Sang-Soo Hwang, Young-Chang Joo: The self-formatting barrier characteristics of Cu-Mg/SiO₂ and Cu-Ru/SiO₂ films for Cu interconnects. 744-748
• 
  Insu Jeon, Ki-Ju Kang, Seyoung Im: Stress intensities at the triple junction of a multilevel thin film package. 749-756
• 
  Tsung-Yueh Tsai, Yi-Shao Lai, Chang-Lin Yeh, Rong-Sheng Chen: Structural design optimization for board-level drop reliability of wafer-level chip-scale packages. 757-762
• 
  S. B. Park, Rahul Joshi: Comparison of thermo-mechanical behavior of lead-free copper and tin-lead column grid array packages. 763-772
• 
  Olli Salmela, Klas Andersson, Altti Perttula, Jussi Särkkä, Markku Tammenmaa: Modified Engelmaier's model taking account of different stress levels. 773-780
• 
  Karim Mohammadi, Seyyed Javad Seyyed Mahdavi: On improving training time of neural networks in mixed signal circuit fault diagnosis applications. 781-793

• 
  W. S. Lau, W. T. Wong, Joy B. H. Tan, B. P. Singh: Effect of a trace of water vapor on Ohmic contact formation for AlGaN/GaN epitaxial wafers. 794-797

• 
  Mile K. Stojcev: Advances in Electronic Testing: Challenges and Methodologies, Dimitris Gizopoulos (Ed.). Springer, Dordrecht (2006), 412 pp., plus XXVI, Hardcover, ISBN: 0-387-29408-2. 798-799
• 
  Mile K. Stojcev: Erik Larson, Introduction to Advanced System-on-Chip Test Design and Optimization , Springer, Dordrecht (2005) ISBN 1-4020-3207-2 388 pp., Hardcover, plus XVIII. 800-801

Volume 48, Number 6, June 2008

• 
  Artur Wymyslowski: Guest Editorial: 2007 EuroSimE conference on thermal, mechanical and multi-physics simulation and experiments in micro-electronics and micro-systems. 803-804
• 
  Jiang Zhou: Transient analysis on hygroscopic swelling characterization using sequentially coupled moisture diffusion and hygroscopic stress modeling method. 805-810
• 
  Yong Liu, Lihua Liang, Scott Irving, Timwah Luk: 3D Modeling of electromigration combined with thermal-mechanical effect for IC device and package. 811-824
• 
  Mario Gonzalez, Fabrice Axisa, Mathieu Vanden Bulcke, Dominique Brosteaux, Bart Vandevelde, Jan Vanfleteren: Design of metal interconnects for stretchable electronic circuits. 825-832
• 
  Cadmus A. Yuan, Olaf van der Sluis, Willem D. van Driel, G. Q. (Kouchi) Zhang: The need for multi-scale approaches in Cu/low-k reliability issues. 833-842
• 
  Steffen Wiese, Mike Roellig, M. Mueller, Klaus-Jürgen Wolter: The effect of downscaling the dimensions of solder interconnects on their creep properties. 843-850
• 
  Lukasz Dowhan, Artur Wymyslowski, Rainer Dudek: An approach of numerical multi-objective optimization in stacked packaging. 851-857

• 
  Andrzej Dziedzic: IMAPS Poland 2007 - Guest Editorial. 859
• 
  Malgorzata Jakubowska, Selim Achmatowicz, Valentinas Baltrusaitis, Anna Mlozniak, Iwona Wyzkiewicz, Elzbieta Zwierkowska: Investigation on a new silver photoimageable conductor. 860-865
• 
  Karol Malecha, Leszek J. Golonka: Microchannel fabrication process in LTCC ceramics. 866-871
• 
  Claude Lucat, Patrick Ginet, Christophe Castille, Hélène Debéda, Francis Ménil: Microsystems elements based on free-standing thick-films made with a new sacrificial layer process. 872-875
• 
  Bjoern Boehme, Klaus-Jürgen Wolter: Study of temperature dependent properties of organic substrate materials. 876-880
• 
  K. Mleczko, Z. Zawislak, A. W. Stadler, Andrzej Kolek, Andrzej Dziedzic, J. Cichosz: Evaluation of conductive-to-resistive layers interaction in thick-film resistors. 881-885
• 
  Vlasta Sedlakova, Josef Sikula, Pavel Tofel, Jiri Majzner: Electro-ultrasonic spectroscopy of polymer-based thick film layers. 886-889
• 
  Piotr Markowski, Andrzej Dziedzic: Planar and three-dimensional thick-film thermoelectric microgenerators. 890-896
• 
  Ewa Klimiec, Wieslaw Zaraska, Krzysztof Zaraska, Kazimierz P. Gasiorski, Tadeusz Sadowski, Michal Pajda: Piezoelectric polymer films as power converters for human powered electronics. 897-901
• 
  Thomas Maeder, Grégory Affolter, Niklaus Johner, Giancarlo Corradini, Peter Ryser: Optimisation of a thick-film 10-400 N force sensor. 902-905
• 
  Mathieu Hautefeuille, Conor O'Mahony, Brendan O'Flynn, Krimo Khalfi, Frank H. Peters: A MEMS-based wireless multisensor module for environmental monitoring. 906-910
• 
  Piotr Jankowski-Mihulowicz, Wlodzimierz Kalita, Bartosz Pawlowicz: Problem of dynamic change of tags location in anticollision RFID systems. 911-918

• 
  W. S. Lau, K. S. See, C. W. Eng, W. K. Aw, K. H. Jo, K. C. Tee, James Y. M. Lee, Elgin K. B. Quek, H. S. Kim, Simon T. H. Chan, L. Chan: Anomalous narrow width effect in p-channel metal-oxide-semiconductor surface channel transistors using shallow trench isolation technology. 919-922
• 
  Masaaki Koganemaru, Toru Ikeda, Noriyuki Miyazaki: Residual stress evaluation in resin-molded IC chips using finite element analysis and piezoresistive gauges. 923-932
• 
  M. Y. Tsai, C. H. Chen: Evaluation of test methods for silicon die strength. 933-941
• 
  Changsoo Jang, Seungbae Park, Bill Infantolino, Lawrence Lehman, Ryan Morgan, Dipak Sengupta: Failure analysis of contact probe pins for SnPb and Sn applications. 942-947
• 
  Jong-Seok Kim, Sang-Woo Lee, Kyu-Dong Jung, Woon-Bae Kim, Sung-Hoon Choa, Byeong-Kwon Ju: Quality factor measurement of micro gyroscope structure according to vacuum level and desired Q-factor range package method. 948-952
• 
  Mile K. Stojcev: High-performance Energy-efficient Microprocessor Design, Vojin Oklobdzija, Ram K. Krishnamurthy (Eds.), Dordrecht, The Netherlands, Springer (2006), 338 pp., Hardcover, ISBN: 0-387-28594-6. 953-954
• 
  Mile K. Stojcev: Alan Clements. Principles of Computer Hardware, fourth edition, Oxford University Press; (2006), Paperbound, pp 656, plus XV, ISBN: 0-19-927313-8. 955-956

Volume 48, Number 7, July 2008

• 
  Peter Ersland, Roberto Menozzi: Editorial. 957
• 
  William J. Roesch: Forensic characterization of thin film resistor degradation. 958-964
• 
  Charles S. Whitman: Estimating effective dielectric thickness for capacitors with extrinsic defects by a statistical method. 965-973
• 
  Craig Gaw, Thomas Arnold, Karen Moore: Intrinsic reliability of a 12 V field plate pHEMT. 974-984
• 
  Dorothy June M. Hamada, William J. Roesch: A wafer-level approach to device lifetesting. 985-989
• 
  Leslie Marchut, Charles S. Whitman: Acceleration factors for THB induced degradation of AlGaAs/InGaAs pHEMT devices. 990-993

• 
  Xiaoyang Du, Shurong Dong, Yan Han, Juin J. Liou, Mingxu Huo, You Li, Qiang Cui, Dahai Huang, Demiao Wang: Evaluation of RF electrostatic discharge (ESD) protection in 0.18-µm CMOS technology. 995-999
• 
  Federico Faccio, Hugh J. Barnaby, Xiao J. Chen, Daniel M. Fleetwood, Laura Gonella, Michael L. McLain, Ronald D. Schrimpf: Total ionizing dose effects in shallow trench isolation oxides. 1000-1007
• 
  M. Videnovic-Misic, M. M. Jevtic: Impact of bias condition on 1/f noise of dual-gate depletion type MOSFET in linear region and consequences for noise diagnostic application and modelling. 1008-1014
• 
  Stefano Di Pascoli, Giuseppe Iannaccone: Noise and reliability in simulated thin metal films. 1015-1020
• 
  Wlodzimierz Kalita, Dariusz Klepacki, Mariusz Weglarski: Simulation of transient thermal states in layered electronic microstructures. 1021-1026
• 
  Goran Stojanovic, Mirjana Damnjanovic, Ljiljana Zivanov: Temperature dependence of electrical parameters of SMD ferrite components for EMI suppression. 1027-1032
• 
  Tadahiro Shibutani, Qiang Yu, Masaki Shiratori, Michael G. Pecht: Pressure-induced tin whisker formation. 1033-1039
• 
  Cheng-fu Chen: Effect of underfill filler settling on thermo-mechanical fatigue analysis of flip-chip eutectic solders. 1040-1051
• 
  Kyung-Woon Jang, Chang-Kyu Chung, Woong-Sun Lee, Kyung-Wook Paik: Material properties of anisotropic conductive films (ACFs) and their flip chip assembly reliability in NAND flash memory applications. 1052-1061
• 
  Balázs Illés, Gábor Harsányi: 3D thermal model to investigate component displacement phenomenon during reflow soldering. 1062-1068
• 
  E. H. Wong, Ranjan Rajoo, S. K. W. Seah, C. S. Selvanayagam, W. D. van Driel, J. F. J. M. Caers, X. J. Zhao, N. Owens, L. C. Tan, M. Leoni, P. L. Eu, Y.-S. Lai, C.-L. Yeh: Correlation studies for component level ball impact shear test and board level drop test. 1069-1078
• 
  Y. T. Chin, P. K. Lam, H. K. Yow, T. Y. Tou: Investigation of mechanical shock testing of lead-free SAC solder joints in fine pitch BGA package. 1079-1086
• 
  Chao-Ming Lin, Tzu-Chao Lin, Te-Hua Fang, Kuo-Sheng Chao: Failure analysis of pad-height effects in the fine-pitch interconnection of the anisotropic conductive films. 1087-1092
• 
  Eduardas Bareisa, Vacius Jusas, Kestutis Motiejunas, Rimantas Seinauskas: Test generation at the algorithm-level for gate-level fault coverage. 1093-1101
• 
  Eun-Kyung Kim, Jaeyong Sung: Yield challenges in wafer stacking technology. 1102-1105
• 
  Mile K. Stojcev: T.S. Rathore, Digital Measurement Techniques (2nd ed.), Alpha Science International Ltd., Pangbourne, England (2003) ISBN 0-8493-1709-6 309 pp., Hardcover, plus XIX. 1106-1107
• 
  Mile K. Stojcev: Joseph Cavanagh, Sequential Logic: Analysis and Synthesis , CRC Taylor and Francis Group, Boca Raton (2007) ISBN 0-8493-7564-9 Hardcover, pp 896, plus XIII. 1108-1109

Volume 48, Numbers 8-9, August - September 2008

• 
  Guido Groeseneken, Ingrid De Wolf, A. J. Mouthaan, Jaap Bisschop: Editorial. 1111

• 
  M. de Jong, D. Freeman: Bridging the business model gap between the semiconductor industry and the automotive industry with respect to quality and reliability. 1112-1113
• 
  M. Alam: Reliability- and process-variation aware design of integrated circuits. 1114-1122

• 
  J. van den Brand, J. de Baets, T. van Mol, A. Dietzel: Systems-in-foil - Devices, fabrication processes and reliability issues. 1123-1128
• 
  L. Crétinon, M. El Hadachi, F. Augereau, L. Doireau, G. Despaux: Influence of the organic pollution on the reliability of HE9 connectors. 1129-1132
• 
  Grzegorz Janczyk, Tomasz Bieniek, Jerzy Szynka, Piotr Grabiec: Reliability issues of e-Cubes heterogeneous system integration. 1133-1138
• 
  Cora Salm, Victor M. Blanco Carballo, Joost Melai, Jurriaan Schmitz: Reliability aspects of a radiation detector fabricated by post-processing a standard CMOS chip. 1139-1143
• 
  A. Aubert, L. Dantas de Morais, J. P. Rebrasse: Laser decapsulation of plastic packages for failure analysis: Process control and artefact investigations. 1144-1148

• 
  Chan-Yen Chou, Tuan-Yu Hung, Shin-Yueh Yang, Ming-Chih Yew, Wen-Kun Yang, Kuo-Ning Chiang: Solder joint and trace line failure simulation and experimental validation of fan-out type wafer level packaging subjected to drop impact. 1149-1154
• 
  N. Roth, W. Wondrak, A. Willikens, James Hofmeister: Ball grid array (BGA) solder joint intermittency real-time detection. 1155-1160
• 
  L. Feller, S. Hartmann, D. Schneider: Lifetime analysis of solder joints in high power IGBT modules for increasing the reliability for operation at 150 degreeC. 1161-1166
• 
  F. Sun, Hendrik Pieter Hochstenbach, Willem D. van Driel, G. Q. Zhang: Fracture morphology and mechanism of IMC in Low-Ag SAC Solder/UBM (Ni(P)-Au) for WLCSP. 1167-1170

• 
  Paul E. Nicollian: Insights on trap generation and breakdown in ultra thin SiO₂ and SiON dielectrics from low voltage stress-induced leakage current measurements. 1171-1177
• 
  Thomas Aichinger, Michael Nelhiebel, Tibor Grasser: On the temperature dependence of NBTI recovery. 1178-1184
• 
  Jung-Eun Seok, Hyun-Joo Kim, Jae-Yong Seo, Sam-jin Hwang, Byung-Heon Kwak: Optimization of gate poly TAB size and reliability on short channel pMOSFET. 1185-1188
• 
  Peter Hofmann: Voltage acceleration of time dependent breakdown of ultra-thin NO and NON dielectrics. 1189-1192
• 
  E. Atanassova, Ninoslav Stojadinovic, Albena Paskaleva: Degradation behavior of Ta₂O₅ stacks and its dependence on the gate electrode. 1193-1197

• 
  M. Diop, N. Revil, M. Marin, F. Monsieur, P. Chevalier, G. Ghibaudo: Impact of inside spacer process on fully self-aligned 250 GHz SiGe: C HBTs reliability performances: a-Si vs. nitride. 1198-1201
• 
  M. L. Bourqui, L. Béchou, Olivier Gilard, Y. Deshayes, P. Del Vecchio, L. S. How, F. Rosala, Y. Ousten, André Touboul: Reliability investigations of 850 nm silicon photodiodes under proton irradiation for space applications. 1202-1207
• 
  G. Mura, G. Cassanelli, Fausto Fantini, Massimo Vanzi: Sulfur-contamination of high power white LED. 1208-1211
• 
  Xiang Liu, Jiann-shiun Yuan, Juin J. Liou: InGaP/GaAs heterojunction bipolar transistor and RF power amplifier reliability. 1212-1215
• 
  Jae-Seong Jeong, Jin-Kyu Jung, Sang-Deuk Park: Reliability improvement of InGaN LED backlight module by accelerated life test (ALT) and screen policy of potential leakage LED. 1216-1220

• 
  Stanislaw Kalicinski, Martine Wevers, Ingrid De Wolf: Charging and discharging phenomena in electrostatically-driven single-crystal-silicon MEM resonators: DC bias dependence and influence on the series resonance frequency. 1221-1226
• 
  S. Bendida, J. J. Koning, J. J. M. Bontemps, J. T. M. van Beek, D. Wu, M. A. J. van Gils, S. Nath: Temperature stability of a piezoresistive MEMS resonator including self-heating. 1227-1231
• 
  A. Belarni, M. Lamhamdi, Patrick Pons, L. Boudou, J. Guastavino, Y. Segui, George Papaioannou, Robert Plana: Kelvin probe microscopy for reliability investigation of RF-MEMS capacitive switches. 1232-1236
• 
  Jinyu Ruan, G. J. Papaioannou, Nicolas Nolhier, Nicolas Mauran, M. Bafleur, Fabio Coccetti, Robert Plana: ESD failure signature in capacitive RF MEMS switches. 1237-1240
• 
  Jinyu Ruan, E. Papandreou, M. Lamhamdi, M. Koutsoureli, Fabio Coccetti, Patrick Pons, George Papaioannou, Robert Plana: Alpha particle radiation effects in RF MEMS capacitive switches. 1241-1244
• 
  A. Neels, A. Dommann, A. Schifferle, O. Papes, E. Mazza: Reliability and failure in single crystal silicon MEMS devices. 1245-1247
• 
  M. Lamhamdi, Patrick Pons, Usama Zaghloul, L. Boudou, Fabio Coccetti, J. Guastavino, Y. Segui, George Papaioannou, Robert Plana: Voltage and temperature effect on dielectric charging for RF-MEMS capacitive switches reliability investigation. 1248-1252

• 
  Peter Jacob, Werner Rothkirch: Unusual defects, generated by wafer sawing: Diagnosis, mechanisms and how to distinguish from related failures. 1253-1257
• 
  Christian Gautier, Sophie Ledain, Sébastien Jacqueline, Matthieu Nongaillard, Vincent Georgel, Karine Danilo: Silicon based system in package: Improvement of passive integration process to avoid TBMS failure. 1258-1262
• 
  P. Schwindenhammer, H. Murray, Ph. Descamps, P. Poirier: Determination of temperature change inside IC packages during laser ablation of molding compound. 1263-1267
• 
  W. D. van Driel, D. G. Yang, G. Q. Zhang: On chip-package stress interaction. 1268-1272

• 
  Andreas Altes, Rainer Tilgner, Markus Reissner, Grazyna Steckert, Gerald Neumann: Advanced thermal failure analysis and reliability investigations - Industrial demands and related limitations. 1273-1278
• 
  Antoine Reverdy, Philippe Perdu, H. Murray, M. de la Bardonnie, P. Poirier: Fast and rigorous use of thermal time constant to characterize back end of the line test structure in advanced technology. 1279-1284
• 
  D. Isakov, A. A. B. Tio, T. Geinzer, J. C. H. Phang, Y. Zhang, L. J. Balk: Near-field detection of photon emission from silicon with 30 nm spatial resolution. 1285-1288
• 
  Frank Zachariasse, Jan van Hassel: Conditional time resolved photoemission for debugging ICs with intermittent faults. 1289-1294
• 
  Piotr Laskowski, Arkadiusz Glowacki, Christian Boit: Detectability of dynamic photon emission in static Si CCD for signal path determination in integrated circuits. 1295-1299

• 
  P. Moens, G. Van den bosch: Reliability assessment of integrated power transistors: Lateral DMOS versus vertical DMOS. 1300-1305
• 
  G. Busatto, G. Currò, Francesco Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi: Experimental evidence of "latent gate oxide damages" in medium voltage power MOSFET as a result of heavy ions exposure. 1306-1309
• 
  Stefano Aresu, Reinhard Pufall, Michael Goroll, Wolfgang Gustin: NBTI on smart power technologies: A detailed analysis of two concurrent effects using a re-examined on-the-fly technique. 1310-1312
• 
  Danijel Dankovic, Ivica Manic, Vojkan Davidovic, Snezana Djoric-Veljkovic, Snezana Golubovic, Ninoslav Stojadinovic: Negative bias temperature instability in n-channel power VDMOSFETs. 1313-1317
• 
  D. Pic, Arnaud Régnier, V. Pean, Jean-Luc Ogier, D. Goguenheim: Dynamic stress method for accurate NVM oxide robustness evaluation for automotive applications. 1318-1321

• 
  Ulrike Kindereit, Christian Boit, Uwe Kerst, Steven Kasapi, Radu Ispasoiu, Roy Ng, William K. Lo: Comparison of laser voltage probing and mapping results in oversized and minimum size devices of 120 nm and 65 nm technology. 1322-1326
• 
  Tuba Kiyan, Christof Brillert, Christian Boit: Timing analysis of scan design integrated circuits using stimulation by an infrared diode laser in externally triggered pulsing condition. 1327-1332
• 
  Aziz Machouat, G. Haller, Vincent Goubier, Dean Lewis, Philippe Perdu, Vincent Pouget, Pascal Fouillat, F. Essely: Effect of physical defect on shmoos in CMOS DSM technologies. 1333-1338
• 
  Roland Biberger, Guenther Benstetter, Thomas Schweinboeck, Peter Breitschopf, Holger Goebel: Intermittent-contact scanning capacitance microscopy versus contact mode SCM applied to 2D dopant profiling. 1339-1342
• 
  C. Hartmann, M. Wieberneit: Layout analysis as supporting tool for failure localization: Basic principles and case studies. 1343-1348
• 
  Liming Gao, Christian Burmer: PLL soft functional failure analysis in advanced logic product using fault based analogue simulation and soft defect localization. 1349-1353

• 
  Y. Deshayes, I. Bord, G. Barreau, M. Aiche, P. H. Moretto, L. Béchou, A. C. Roehrig, Y. Ousten: Selective activation of failure mechanisms in packaged double-heterostructure light emitting diodes using controlled neutron energy irradiation. 1354-1360
• 
  Francesca Danesin, Augusto Tazzoli, Franco Zanon, Gaudenzio Meneghesso, Enrico Zanoni, Antonio Cetronio, Claudio Lanzieri, Simone Lavanga, Marco Peroni, Paolo Romanini: Thermal storage effects on AlGaN/GaN HEMT. 1361-1365
• 
  M. Bouya, N. Malbert, Nathalie Labat, D. Carisetti, Philippe Perdu, J. C. Clement, B. Lambert, M. Bonnet: Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques. 1366-1369
• 
  Augusto Tazzoli, Gaudenzio Meneghesso, Franco Zanon, Francesca Danesin, Enrico Zanoni, P. Bove, R. Langer, J. Thorpe: Electrical characterization and reliability study of HEMTs on composite substrates under high electric fields. 1370-1374

• 
  F. Chen, O. Bravo, D. Harmon, M. Shinosky, J. Aitken: Cu/low-k dielectric TDDB reliability issues for advanced CMOS technologies. 1375-1383
• 
  Kristof Croes, G. Cannatá, L. Zhao, Zsolt Tokei: Study of copper drift during TDDB of intermetal dielectrics by using fully passivated MOS capacitors as test vehicle. 1384-1387
• 
  Yuan Li, Leo van Marwijk, Som Nath: Fast electromigration wafer mapping for wafer fab process monitoring and improvement. 1388-1392
• 
  Kirsten Weide-Zaage, Jiani Zhao, Joharsyah Ciptokusumo, Oliver Aubel: Determination of migration effects in Cu-via structures with respect to process-induced stress. 1393-1397
• 
  Kirsten Weide-Zaage, Farzan Kashanchi, Oliver Aubel: Simulation of migration effects in nanoscaled copper metallizations. 1398-1402

• 
  Christian Russ: ESD issues in advanced CMOS bulk and FinFET technologies: Processing, protection devices and circuit strategies. 1403-1411
• 
  M. Verchiani, E. Bouyssou, G. Fiannaca, F. Cantin, C. Anceau, P. Ranson: Reliability study of TaON capacitors: From leakage current characterization to ESD robustness prediction. 1412-1416
• 
  E. H. T. Olthof, G. J. de Raad: Non-linear width scaling of ESD protection devices and link with p-well implant in BCD-processes. 1417-1421
• 
  Frédéric Barbier, Sebastien Jacqueline: ESD sensitivity investigation on a wide range of high density embedded capacitors. 1422-1426

• 
  X. Perpiñà, Jean-François Serviere, Xavier Jordà, A. Fauquet, Salvador Hidalgo, Jesús Urresti-Ibañez, J. Rebollo, Michel Mermet-Guyennet: IGBT module failure analysis in railway applications. 1427-1431
• 
  Giovanni Breglio, Andrea Irace, E. Napoli, M. Riccio, Paolo Spirito, K. Hamada, T. Nishijima, T. Ueta: Detection of localized UIS failure on IGBTs with the aid of lock-in thermography. 1432-1434
• 
  G. Busatto, Carmine Abbate, B. Abbate, Francesco Iannuzzo: IGBT modules robustness during turn-off commutation. 1435-1439
• 
  Peter Borthen, Gerhard K. M. Wachutka: Testing semiconductor devices at extremely high operating temperatures. 1440-1443
• 
  Viorel Banu, Pierre Brosselard, Xavier Jordà, J. Montserrat, Philippe Godignon, José Millán: Behaviour of 1.2 kV SiC JBS diodes under repetitive high power stress. 1444-1448
• 
  Francesco Iannuzzo: High performance, FPGA-based test apparatus for unclamped inductive switching of IGBTs. 1449-1452
• 
  J. L. Fock-Sui-Too, B. Chauchat, P. Austin, Patrick Tounsi, Michel Mermet-Guyennet, R. Meuret: Performance and reliability testing of modern IGBT devices under typical operating conditions of aeronautic applications. 1453-1458

• 
  Fred G. Kuper: Automotive IC reliability: Elements of the battle towards zero defects. 1459-1463
• 
  J. B. Sauveplane, Patrick Tounsi, E. Scheid, A. Deram: 3D electro-thermal investigations for reliability of ultra low ON state resistance power MOSFET. 1464-1467
• 
  P. Cova, Nicola Delmonte, Roberto Menozzi: Thermal modeling of high frequency DC-DC switching modules: Electromagnetic and thermal simulation of magnetic components. 1468-1472
• 
  H. El Brouji, Olivier Briat, J.-M. Vinassa, Nicolas Bertrand, E. Woirgard: Comparison between changes of ultracapacitors model parameters during calendar life and power cycling ageing tests. 1473-1478
• 
  J. Roig, B. Desoete, F. Bauwens, F. Lovadina, P. Moens: Thermal resistance assessment in multi-trenched power devices. 1479-1484
• 
  Yasunori Goto: Defect analysis concerning variation in characteristics of PIN diode for Hybrid Vehicles. 1485-1489
• 
  Reinhard Pufall, Werner Kanert, Stefano Aresu, Michael Goroll: Reduction of test effort. Looking for more acceleration for reliable components for automotive applications. 1490-1493
• 
  A. Gauffier, J.-P. David, Olivier Gilard: Analytical model for multi-junction solar cells prediction in space environment. 1494-1499
• 
  Alberto Castellazzi, Mauro Ciappa: Novel simulation approach for transient analysis and reliable thermal management of power devices. 1500-1504
• 
  J. J. Koning, S. Lecaudey, E. Spaan, M. Stoutjesdijk, J. H. J. Janssen: Thermal heating within SOI. 1505-1508
• 
  Michael Goroll, Reinhard Pufall, Stefano Aresu, Wolfgang Gustin: New aspects for lifetime prediction of bipolar transistors in automotive power wafer technologies by using a power law fitting procedure. 1509-1512

• 
  S. Martens, B. Krueger, W. Mack, F. Voelklein, J. Wilde: Low-cost preparation method for exposing IC surfaces in stacked die packages by micro-abrasive blasting. 1513-1516
• 
  Yu Yang, Hugo Bender, Kai Arstila, Bart Swinnen, Bert Verlinden, Ingrid De Wolf: Detection of failure sites by focused ion beam and nano-probing in the interconnect of three-dimensional stacked circuit structures. 1517-1520
• 
  W. Polspoel, Wilfried Vandervorst, L. Aguilera, M. Porti, M. Nafría, X. Aymerich: Nanometer-scale leakage measurements in high vacuum on de-processed high-k capacitors. 1521-1524
• 
  Michael Heer, P. Grombach, A. Heid, Dionyz Pogany: Hot spot analysis during thermal shutdown of SOI BCDMOS half bridge driver for automotive applications. 1525-1528
• 
  M. Sienkiewicz, Philippe Perdu, Abdellatif Firiti, Kevin Sanchez, O. Crépel, Dean Lewis: Failure Analysis enhancement by evaluating the Photoelectric Laser Stimulation impact on mixed-mode ICs. 1529-1532
• 
  Masaru Sanada: Voltage-based fault path tracing by transistor operating point analysis. 1533-1538

• 
  G. Beylier, S. Bruyère, D. Benoit, G. Ghibaudo: Impact of silicon nitride CESL on NLDEMOS transistor reliability. 1539-1543
• 
  Despina C. Moschou, M. A. Exarchos, Dimitrios N. Kouvatsos, G. J. Papaioannou, A. Arapoyanni, Apostolos T. Voutsas: Reliability and defectivity comparison of n- and p-channel SLS ELA polysilicon TFTs fabricated with a novel crystallization technique. 1544-1548
• 
  Muhammad Faiz Bukhori, Scott Roy, Asen Asenov: Statistical aspects of reliability in bulk MOSFETs with multiple defect states and random discrete dopants. 1549-1552
• 
  Jan Ackaert, R. Charavel, K. Dhondt, B. Vlachakis, Luc De Schepper, M. Millecam, E. Vandevelde, P. Bogaert, A. Iline, Eddy De Backer, A. Vlad, Jean-Pierre Raskin: MIMC reliability and electrical behavior defined by a physical layer property of the dielectric. 1553-1556

• 
  Q. Li, J. F. L. Goosen, J. T. M. van Beek, F. van Keulen, K. L. Phan, G. Q. Zhang: Failure analysis of a thin-film nitride MEMS package. 1557-1561
• 
  K. Nötzold, J. Graf, Roland Müller-Fiedler: A four-point-bending-test for the stability assessment of glass frit bonded molded microsensors. 1562-1566
• 
  J. J. M. Zaal, W. D. van Driel, S. Bendida, Q. Li, J. T. M. van Beek, G. Q. Zhang: Packaging influences on the reliability of MEMS resonators. 1567-1571

• 
  Urban Kovac, Dave Reid, Campbell Millar, Gareth Roy, Scott Roy, Asen Asenov: Statistical simulation of random dopant induced threshold voltage fluctuations for 35 nm channel length MOSFET. 1572-1575
• 
  Elie Maricau, Peter H. N. De Wit, Georges G. E. Gielen: An analytical model for hot carrier degradation in nanoscale CMOS suitable for the simulation of degradation in analog IC applications. 1576-1580
• 
  Guido T. Sasse, Mustafa Acar, Fred G. Kuper, Jurriaan Schmitz: RF CMOS reliability simulations. 1581-1585
• 
  Denis Teixeira Franco, Maí Correia Vasconcelos, Lirida A. B. Naviner, Jean-François Naviner: Signal probability for reliability evaluation of logic circuits. 1586-1591
• 
  Julie Ferrigno, Aziz Machouat, Philippe Perdu, Dean Lewis, Gerald Haller, Vincent Goubier: Generic simulator for faulty IC. 1592-1596
• 
  Weidong Kuang, Lizhi Cao, C. Yu, J. S. Yuan: PMOS breakdown effects on digital circuits - Modeling and analysis. 1597-1600
• 
  Maí C. R. de Vasconcelos, Denis Teixeira Franco, Lirida A. B. Naviner, Jean-François Naviner: Relevant metrics for evaluation of concurrent error detection schemes. 1601-1603
• 
  E. Miranda: Compact modeling of the non-linear post-breakdown current in thin gate oxides using the generalized diode equation. 1604-1607

• 
  Peter Jacob: Surface ESD (ESDFOS) in assembly fab machineries as a functional and reliability risk - Failure analysis, tool diagnosis and on-site-remedies. 1608-1612

Volume 48, Number 10, October 2008

• 
  Tadahiro Shibutani, Ji Wu, Qiang Yu, Michael G. Pecht: Key reliability concerns with lead-free connectors. 1613-1627

• 
  Csaba Dominkovics, Gábor Harsányi: Fractal description of dendrite growth during electrochemical migration. 1628-1634

• 
  A. Cuadras, B. Garrido, J. R. Morante, L. Fonseca: Leakage currents and dielectric breakdown of Si_1-x-yGe_xC_y thermal oxides. 1635-1640
• 
  W. S. Lau, Peizhen Yang, V. Ho, L. F. Toh, Y. Liu, S. Y. Siah, L. Chan: An explanation of the dependence of the effective saturation velocity on gate voltage in sub-0.1 µm metal-oxide-semiconductor transistors by quasi-ballistic transport theory. 1641-1648
• 
  Akinobu Teramoto, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi: Accurate negative bias temperature instability lifetime prediction based on hole injection. 1649-1654
• 
  Anastasios A. Katsetos: Negative bias temperature instability (NBTI) recovery with bake. 1655-1659
• 
  You Li, Juin J. Liou, Jim Vinson: Investigation of diode geometry and metal line pattern for robust ESD protection applications. 1660-1663
• 
  A. Grekov, Qingchun Zhang, Husna Fatima, Anant Agarwal, Tangali S. Sudarshan: Effect of crystallographic defects on the reverse performance of 4H-SiC JBS diodes. 1664-1668
• 
  D. Donoval, M. Florovic, D. Gregusová, J. Kovác, P. Kordos: High-temperature performance of AlGaN/GaN HFETs and MOSHFETs. 1669-1672
• 
  Julian W. Post, A. Bhattacharyya: Saline soak tests to determine the short-term reliability of an in situ thin film resistance temperature detector. 1673-1682
• 
  Vijayaraghava Nalladega, Shamachary Sathish, Amarjit S. Brar: Characterization of defects in flexible circuits with ultrasonic atomic force microscopy. 1683-1688
• 
  Antoine Reverdy, M. de la Bardonnie, P. Poirier, H. Murray, Philippe Perdu, A. Boukkali: Dynamic study of the thermal laser stimulation response on advanced technology structures. 1689-1695
• 
  Seung Hyun Cho: Heat dissipation effect of Al plate embedded substrate in network system. 1696-1702
• 
  Janusz Zarebski, Krzysztof Górecki: Electrothermal compact macromodel of monolithic switching voltage regulator MC34063A. 1703-1710
• 
  Rolf Johannessen, Frøydis Oldervoll, Frode Strisland: High temperature reliability of aluminium wire-bonds to thin film, thick film and low temperature co-fired ceramic (LTCC) substrate metallization. 1711-1719
• 
  Yu-Qun Hu, Ya-Pu Zhao, Tongxi Yu: Tensile tests of micro anchors anodically bonded between Pyrex glass and aluminum thin film coated on silicon wafer. 1720-1723
• 
  Peter Ming-Han Lee, Reza Sedaghat: FPGA-based switch-level fault emulation using module-based dynamic partial reconfiguration. 1724-1733

• 
  Ulugbek Shaislamov, Jun-Mo Yang, Jung Ho Yoo, Hyun-Sang Seo, Kyung-Jin Park, Chel-Jong Choi, Tae-Eun Hong, Beelyong Yang: Two-dimensional dopant profiling in semiconductor devices by electron holography and chemical etching delineation techniques with the same specimen. 1734-1736
• 
  Chih-Kuang Lin, Tung-Hsien Lin: Effects of continuously applied stress on tin whisker growth. 1737-1740

• 
  Deng-Feng Li: A note on "using intuitionistic fuzzy sets for fault-tree analysis on printed circuit board assembly". 1741

• 
  Mile K. Stojcev: Tim Kogel, Rainer Leupers and Heinrich Meyr, Integrated System-Level Modeling of Network-on-Chip enabled Multi-Processors Platforms , Springer, Dordercht (2006) ISBN 1-4020-4825-4 Hardcover, 199 pp., plus XIV. 1742-1743
• 
  Mile K. Stojcev: Richard Zurawski, Editor, Integration Technologies for Industrial Automated Systems, CRC Taylor and Francis Group, Boca Raton (2007) ISBN 0-8493-9262-4 Plus XX 552 pp., Hardcover. 1744-1745

Volume 48, Numbers 11-12, November - December 2008

• 
  E. H. Wong, S. K. W. Seah, V. P. W. Shim: A review of board level solder joints for mobile applications. 1747-1758

• 
  R. Pagano, Salvatore Lombardo, F. Palumbo, P. Kirsch, S. A. Krishnan, C. Young, R. Choi, G. Bersuker, James H. Stathis: A novel approach to characterization of progressive breakdown in high-k/metal gate stacks. 1759-1764
• 
  Banani Sen, Bing-Liang Yang, Hei Wong, Chi-Wah Kok, P. K. Chu, A. Huang: Effects of aluminum incorporation on hafnium oxide film using plasma immersion ion implantation. 1765-1768
• 
  Parhat Ahmet, Kentaro Nakagawa, Kuniyuki Kakushima, Hiroshi Nohira, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai: Electrical characteristics of MOSFETs with La₂O₃/Y₂O₃ gate stack. 1769-1771
• 
  P. Bhattacharyya, P. K. Basu, B. Mondal, H. Saha: A low power MEMS gas sensor based on nanocrystalline ZnO thin films for sensing methane. 1772-1779
• 
  W. M. Tang, C. H. Leung, P. T. Lai: Improved sensing characteristics of MISiC Schottky-diode hydrogen sensor by using HfO₂ as gate insulator. 1780-1785
• 
  Y. T. Chiang, Y. K. Fang, Y. J. Huang, T. H. Chou, S. Y. Yeh, C. S. Lin: Effect of the pre-gate oxide cleaning temperature on the reliability of GOI and devices performances in deep submicron CMOS technology. 1786-1790
• 
  Chia-Wei Hsu, Yean-Kuen Fang, Wen-Kuan Yeh, Chien-Ting Lin: Significantly improving sub-90 nm CMOSFET performances with notch-gate enhanced high tensile-stress contact etch stop layer. 1791-1794
• 
  I. Mejia, M. Estrada, M. Avila: Improved upper contacts PMMA on P3HT PTFTS using photolithographic processes. 1795-1799
• 
  Ying Wang, Fei Cao, Minghui Ding, Yun-tao Liu: Diffusion barrier performance of Zr-N/Zr bilayered film in Cu/Si contact system. 1800-1803
• 
  Hong Wu, Weifeng Sun, Yangbo Yi, Haisong Li, Longxing Shi: The degradation mechanisms in high voltage pLEDMOS transistor with thick gate oxide. 1804-1808
• 
  Zigui Cao, Bo Zhang, Xiong Zhang, Elton Lee, Weiran Kong: Investigation of charge trapping/de-trapping induced operation lifetime degradation in triple SuperFlash^® memory cell. 1809-1814
• 
  Arindam Goswami, Bongtae Han: On the applicability of MIL-Spec-based helium fine leak test to packages with sub-micro liter cavity volumes. 1815-1821
• 
  G. Khatibi, W. Wroczewski, B. Weiss, T. Licht: A fast mechanical test technique for life time estimation of micro-joints. 1822-1830
• 
  Ricky Valentin, Donald Barker, Michael D. Osterman: Model for life prediction of fatigue-creep interaction. 1831-1836
• 
  Ying-Chih Lee, Bor-Tsuen Wang, Yi-Shao Lai, Chang-Lin Yeh, Rong-Sheng Chen: Finite element model verification for packaged printed circuit board by experimental modal analysis. 1837-1846
• 
  Alfred Yeo, Bernd Ebersberger, Charles Lee: Consideration of temperature and current stress testing on flip chip solder interconnects. 1847-1856
• 
  Jeong-Won Yoon, Hyun-Suk Chun, Bo-In Noh, Ja-Myeong Koo, Jong-Woong Kim, Hoo-Jeong Lee, Seung-Boo Jung: Mechanical reliability of Sn-rich Au-Sn/Ni flip chip solder joints fabricated by sequential electroplating method. 1857-1863
• 
  Jeong-Won Yoon, Bo-In Noh, Young-Ho Lee, Hyo-Soo Lee, Seung-Boo Jung: Effects of isothermal aging and temperature-humidity treatment of substrate on joint reliability of Sn-3.0Ag-0.5Cu/OSP-finished Cu CSP solder joint. 1864-1874
• 
  Chun-Chih Chuang, Tsung-Fu Yang, Jin-Ye Juang, Yin-Po Hung, Chau-Jie Zhan, Yu-Min Lin, Ching-Tsung Lin, Pei-Chen Chang, Tao-Chih Chang: Influence of underfill materials on the reliability of coreless flip chip package. 1875-1881
• 
  Jong-Woong Kim, Jin-Kyu Jang, Sang-Ok Ha, Sang-Su Ha, Dae-Gon Kim, Seung-Boo Jung: Effect of high-speed loading conditions on the fracture mode of the BGA solder joint. 1882-1889
• 
  Wojciech Toczek: Self-testing of fully differential multistage circuits using common-mode excitation. 1890-1899
• 
  T. Nandha Kumar, Chia Wai Chong: An automated approach for locating multiple faulty LUTs in an FPGA. 1900-1906

last updated on Sat May 18 06:29:29 2013 by the dblp team
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