Volume 47, Number 1, January 2007

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  Hei Wong, V. Filip, C. K. Wong, P. S. Chung: Silicon integrated photonics begins to revolutionize. 1-10
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  Viktor Sverdlov, Hans Kosina, Siegfried Selberherr: Modeling current transport in ultra-scaled field-effect transistors. 11-19
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  Takeo Hattori, Hiroshi Nohira, S. Shinagawa, M. Hori, M. Kase, T. Maruizumi: Angle-resolved photoelectron spectroscopy on gate insulators. 20-26
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  Ming-Dou Ker, Wei-Jen Chang: Overview on ESD protection design for mixed-voltage I/O interfaces with high-voltage-tolerant power-rail ESD clamp circuits in low-voltage thin-oxide CMOS technology. 27-35

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  Sergey Shaimeev, Vladimir Gritsenko, Kaupo Kukli, Hei Wong, Eun-Hong Lee, Chungwoo Kim: Single band electronic conduction in hafnium oxide prepared by atomic layer deposition. 36-40
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  C. Leyris, F. Martinez, A. Hoffmann, M. Valenza, J. C. Vildeuil: N-MOSFET oxide trap characterization induced by nitridation process using RTS noise analysis. 41-45
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  Y. Fu, H. Wong, Juin J. Liou: Characterization and modeling of flicker noise in junction field-effect transistor with source and drain trench isolation. 46-50
• 
  Milan Jevtic, Jovan M. Hadzi-Vukovic: Study of the electrical cycling stressed large area Schottky diodes using I-V and noise measurements. 51-58
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  M. A. Belaïd, K. Ketata, M. Gares, K. Mourgues, M. Masmoudi, J. Marcon: Comparative analysis of RF LDMOS capacitance reliability under accelerated ageing tests. 59-64
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  Giovanna Sozzi, Roberto Menozzi: A review of the use of electro-thermal simulations for the analysis of heterostructure FETs. 65-73
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  Hirotaka Komoda, Chie Moritani, Kazutaka Takahashi, Heiji Watanabe, Kiyoshi Yasutake: Sample tilting technique for preventing electrostatic discharge during high-current FIB gas-assisted etching with XeF₂. 74-81
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  Hongfei Liu, Alin Hou, Hongbo Zhang, Daming Zhang, Maobin Yi: A voltage calibration technique of electro-optic probing for characterization internal to IC's chip. 82-87
• 
  Yuki Fukuda, Michael D. Osterman, Michael G. Pecht: The impact of electrical current, mechanical bending, and thermal annealing on tin whisker growth. 88-92
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  J. Varghese, A. Dasgupta: Test methodology for durability estimation of surface mount interconnects under drop testing conditions. 93-103
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  Yi-Shao Lai, Tong Hong Wang: Optimal design towards enhancement of board-level thermomechanical reliability of wafer-level chip-scale packages. 104-110
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  Yi-Shao Lai, Tong Hong Wang, Han-Hui Tsai, Ming-Hwa R. Jen: Cyclic bending reliability of wafer-level chip-scale packages. 111-117
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  J. G. Lee, K. N. Subramanian: Effects of TMF heating rates on damage accumulation and resultant mechanical behavior of Sn-Ag based solder joints. 118-131
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  Stoyan Stoyanov, Robert W. Kay, Chris Bailey, Marc P. Y. Desmulliez: Computational modelling for reliable flip-chip packaging at sub-100mum pitch using isotropic conductive adhesives. 132-141

Volume 47, Numbers 2-3, February-March 2007

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  Artur Wymyslowski, Bart Vandevelde, Dag Andersson: Thermal, mechanical and multi-physics simulation and experiments in micro-electronics and micro-systems. 159-160
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  F. Cacho, S. Orain, G. Cailletaud, H. Jaouen: A constitutive single crystal model for the silicon mechanical behavior: Applications to the stress induced by silicided lines and STI in MOS technologies. 161-167
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  Stephan Schoenfelder, Matthias Ebert, Christof Landesberger, Karlheinz Bock, Jörg Bagdahn: Investigations of the influence of dicing techniques on the strength properties of thin silicon. 168-178
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  M. A. J. van Gils, Olaf van der Sluis, G. Q. Zhang, J. H. J. Janssen, R. M. J. Voncken: Analysis of Cu/low-k bond pad delamination by using a novel failure index. 179-186
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  Mike Roellig, Rainer Dudek, Steffen Wiese, Bjoern Boehme, Bernhard Wunderle, Klaus-Jürgen Wolter, Bernd Michel: Fatigue analysis of miniaturized lead-free solder contacts based on a novel test concept. 187-195
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  Chang-Chun Lee, Chien-Chen Lee, Hsiao-Tung Ku, Shu-Ming Chang, Kuo-Ning Chiang: Solder joints layout design and reliability enhancements of wafer level packaging using response surface methodology. 196-204
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  W. D. van Driel, A. Mavinkurve, M. A. J. van Gils, G. Q. Zhang: Advanced structural similarity rules for the BGA package family. 205-214
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  Nele Van Steenberge, Paresh Limaye, Geert Willems, Bart Vandevelde, Inge Schildermans: Analytical and finite element models of the thermal behavior for lead-free soldering processes in electronic assembly. 215-222
• 
  Steffen Wiese, Klaus-Jürgen Wolter: Creep of thermally aged SnAgCu-solder joints. 223-232
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  D. G. Yang, Kaspar M. B. Jansen, Leo J. Ernst, G. Q. Zhang, H. J. L. Bressers, J. H. J. Janssen: Effect of filler concentration of rubbery shear and bulk modulus of molding compounds. 233-239
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  C. van't Hof, Kaspar M. B. Jansen, G. Wisse, Leo J. Ernst, D. G. Yang, G. Q. Zhang, H. J. L. Bressers: Novel shear tools for viscoelastic characterization of packaging polymers. 240-247
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  V. Gonda, Kaspar M. B. Jansen, Leo J. Ernst, J. den Toonder, G. Q. Zhang: Micro-mechanical testing of SiLK by nanoindentation and substrate curvature techniques. 248-251
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  M. Spraul, W. Nüchter, A. Möller, Bernhard Wunderle, Bernd Michel: Reliability of SnPb and Pb-free flip-chips under different test conditions. 252-258
• 
  Bart Vandevelde, Mario Gonzalez, Paresh Limaye, Petar Ratchev, Eric Beyne: Thermal cycling reliability of SnAgCu and SnPb solder joints: A comparison for several IC-packages. 259-265
• 
  C. Andersson, D. R. Andersson, P. E. Tegehall, Johan Liu: Effect of different temperature cycling profiles on the crack initiation and propagation of Sn-3.5Ag wave soldered solder joints. 266-272
• 
  M. A. J. van Gils, W. D. van Driel, G. Q. Zhang, H. J. L. Bressers, Richard B. R. van Silfhout, X. J. Fan, J. H. J. Janssen: Virtual qualification of moisture induced failures of advanced packages. 273-279
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  Artur Wymyslowski, W. D. van Driel, J. van de Peer, N. Tzannetakis, G. Q. Zhang: Advanced numerical prototyping methods in modern engineering applications - Optimisation for micro-electronic package reliability. 280-289
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  H. J. L. Bressers, W. D. van Driel, Kaspar M. B. Jansen, Leo J. Ernst, G. Q. Zhang: Correlation between chemistry of polymer building blocks and microelectronics reliability. 290-294
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  S. Orain, J.-C. Barbé, X. Federspiel, P. Legallo, H. Jaouen: FEM-based method to determine mechanical stress evolution during process flow in microelectronics, application to stress-voiding. 295-301
• 
  Mats Lindgren, Ilja Belov, Magnus Törnvall, Peter Leisner: Application of simulation-based decision making in product development of an RF module. 302-309
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  D. G. Yang, Kaspar M. B. Jansen, Leo J. Ernst, G. Q. Zhang, W. D. van Driel, H. J. L. Bressers, J. H. J. Janssen: Numerical modeling of warpage induced in QFN array molding process. 310-318
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  Kirsten Weide-Zaage, David Dalleau, Yves Danto, Hélène Frémont: Dynamic void formation in a DD-copper-structure with different metallization geometry. 319-325

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  Andrzej Dziedzic, Jan Felba: Polytronic 2005. 327
• 
  James E. Morris: Isotropic conductive adhesives: Future trends, possibilities and risks. 328-330
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  Jana Kolbe, Andreas Arp, Francesco Calderone, Edouard Marc Meyer, Wilhelm Meyer, Helmut Schaefer, Manuela Stuve: Inkjettable conductive adhesive for use in microelectronics and microsystems technology. 331-334
• 
  Ryszard Kisiel, Jan Felba, Janusz Borecki, Andrzej Moscicki: Problems of PCB microvias filling by conductive paste. 335-341
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  Tomasz Falat, Artur Wymyslowski, Jana Kolbe: Numerical approach to characterization of thermally conductive adhesives. 342-346
• 
  Péter Gordon, Bálint Balogh, Bálint Sinkovics: Thermal simulation of UV laser ablation of polyimide. 347-353
• 
  Andrzej Dziedzic: Carbon/polyesterimide thick-film resistive composites - Experimental characterization and theoretical analysis of physicochemical, electrical and stability properties. 354-362
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  Marika P. Immonen, Mikko Karppinen, Jorma K. Kivilahti: Investigation of environmental reliability of optical polymer waveguides embedded on printed circuit boards. 363-371
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  Jacques Tardy, Mohsen Erouel, A. L. Deman, A. Gagnaire, V. Teodorescu, M. G. Blanchin, B. Canut, A. Barau, M. Zaharescu: Organic thin film transistors with HfO₂ high-k gate dielectric grown by anodic oxidation or deposited by sol-gel. 372-377

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  T. K. Chiang: A new two-dimensional threshold voltage model for cylindrical, fully-depleted, surrounding-gate (SG) MOSFETs. 379-383

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  F. Schwierz, C. Schippel: Performance trends of Si-based RF transistors. 384-390

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  X. Zou, J. P. Xu, C. X. Li, P. T. Lai, W. B. Chen: A threshold-voltage model of SiGe-channel pMOSFET without Si cap layer. 391-394
• 
  W. W. (Bill) Abadeer: Effect of stress voltages on voltage acceleration and lifetime projections for ultra-thin gate oxides. 395-400
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  C. Petit, D. Zander: Low voltage stress induced leakage current and time to breakdown in ultra-thin (1.2-2.3nm) oxides. 401-408
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  Kazufumi Watanabe, Akinobu Teramoto, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi: Examination of degradation mechanism due to negative bias temperature stress from a perspective of hole energy for accurate lifetime prediction. 409-418
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  You-Lin Wu, Shi-Tin Lin, Tsung-Min Chang, Juin J. Liou: Reliability study of ultrathin oxide films subject to irradiation-then-stress treatment using conductive atomic force microscopy. 419-421
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  Zoubir Khatir, Stéphane Lefebvre, F. Saint-Eve: Experimental and numerical investigations on delayed short-circuit failure mode of single chip IGBT devices. 422-428
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  W. S. Lau, P. W. Qian, Taejoon Han, Nathan P. Sandler, S. T. Che, S. E. Ang, C. H. Tung, T. T. Sheng: Evidence that N₂O is a stronger oxidizing agent than O₂ for both Ta₂O₅ and bare Si below 1000degreeC and temperature for minimum low-K interfacial oxide for high-K dielectric on Si. 429-433
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  Jianyin Zhao, Fang Liu: Reliability assessment of the metallized film capacitors from degradation data. 434-436
• 
  Bjorn Vermeersch, Gilbert De Mey: Influence of substrate thickness on thermal impedance of microelectronic structures. 437-443
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  J. W. C. de Vries, M. Y. Jansen, W. D. van Driel: On the difference between thermal cycling and thermal shock testing for board level reliability of soldered interconnections. 444-449
• 
  Jing-en Luan, Tong Yan Tee, Eric Pek, Chwee Teck Lim, Zhaowei Zhong: Dynamic responses and solder joint reliability under board level drop test. 450-460
• 
  Hamid R. Zarandi, Seyed Ghassem Miremadi: Dependability evaluation of Altera FPGA-based embedded systems subjected to SEUs. 461-470
• 
  Maria Teresa Sanz, Santiago Celma, Belén Calvo: Low-distortion 4th order programmable Butterworth filter. 471-476

Volume 47, Numbers 4-5, April - May 2007

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  Salvatore Lombardo: Guest Editorial. 477-478

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  Chadwin D. Young, Dawei Heh, Arnost Neugroschel, Rino Choi, Byoung Hun Lee, Gennadi Bersuker: Electrical characterization and analysis techniques for the high-kappa era. 479-488
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  Gilles Reimbold, J. Mitard, X. Garros, Charles Leroux, G. Ghibaudo, F. Martin: Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks. 489-496
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  Rainer Duschl, M. Kerber, A. Avellan, S. Jakschik, U. Schroeder, S. Kudelka: Reliability aspects of Hf-based capacitors: Breakdown and trapping effects. 497-500
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  Paolo Srinivasan, Felice Crupi, Eddy Simoen, Paolo Magnone, Calogero Pace, D. Misra, Cor Claeys: Interfacial layer quality effects on low-frequency noise (1/f) in p-MOSFETs with advanced gate stacks. 501-504
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  A. Shickova, Ben Kaczer, Anabela Veloso, Marc Aoulaiche, M. Houssa, H. E. Maes, Guido Groeseneken, J. A. Kittl: NBTI reliability of Ni FUSI/HfSiON gates: Effect of silicide phase. 505-507
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  Giuseppina Puzzilli, Bogdan Govoreanu, Fernanda Irrera, Maarten Rosmeulen, Jan Van Houdt: Characterization of charge trapping in SiO₂/Al₂O₃ dielectric stacks by pulsed C-V technique. 508-512
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  A. Kerber, Luigi Pantisano, Anabela Veloso, Guido Groeseneken, M. Kerber: Reliability screening of high-k dielectrics based on voltage ramp stress. 513-517
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  Z. Li, Tom Schram, Luigi Pantisano, A. Stesmans, Thierry Conard, S. Shamuilia, V. V. Afanasiev, A. Akheyar, Sven Van Elshocht, D. P. Brunco, W. Deweerd, Y. Naoki, P. Lehnen, Stefan De Gendt, Kristin De Meyer: Mechanism of O₂-anneal induced V_fb shifts of Ru gated stacks. 518-520
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  A. Rothschild, R. Mitsuhashi, C. Kerner, X. Shi, J. L. Everaert, L. Date, Thierry Conard, Olivier Richard, C. Vrancken, R. Verbeeck, Anabela Veloso, A. Lauwers, M. de Potter de ten Broeck, I. Debusschere, M. Jurczak, M. Niwa, P. Absil, S. Biesemans: Optimization of HfSiON using a design of experiment (DOE) approach on 0.45 V V_t Ni-FUSI CMOS transistors. 521-524
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  Isodiana Crupi, Robin Degraeve, Bogdan Govoreanu, David P. Brunco, Philippe Roussel, Jan Van Houdt: Distribution and generation of traps in SiO₂/Al₂O₃ gate stacks. 525-527
• 
  Ralf Endres, Yordan Stefanov, Udo Schwalke: Electrical characterization of crystalline Gd₂O₃ gate dielectric MOSFETs fabricated by damascene metal gate technology. 528-531
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  S. F. Galata, E. K. Evangelou, Y. Panayiotatos, A. Sotiropoulos, A. Dimoulas: Post deposition annealing studies of lanthanum aluminate and ceria high-k dielectrics on germanium. 532-535
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  S. Abermann, J. K. Efavi, G. Sjöblom, Max C. Lemme, J. Olsson, Emmerich Bertagnolli: Impact of Al-, Ni-, TiN-, and Mo-metal gates on MOCVD-grown HfO₂ and ZrO₂ high-kappa dielectrics. 536-539
• 
  C. Merckling, G. Delhaye, M. El-Kazzi, S. Gaillard, Y. Rozier, L. Rapenne, B. Chenevier, O. Marty, G. Saint-Girons, M. Gendry, Y. Robach, G. Hollinger: Epitaxial growth of LaAlO₃ on Si(0 0 1) using interface engineering. 540-543
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  E. Amat, Rosana Rodríguez, M. Nafría, X. Aymerich, James H. Stathis: Influence of the SiO₂ layer thickness on the degradation of HfO₂/SiO₂ stacks subjected to static and dynamic stress conditions. 544-547
• 
  Fu-Chien Chiu, Wen-Chieh Shih, Joseph Ya-min Lee, Huey-Liang Hwang: An investigation of surface state capture cross-sections for metal-oxide-semiconductor field-effect transistors using HfO₂ gate dielectrics. 548-551
• 
  Giuseppe La Rosa, Stewart E. Rauch III: Channel hot carrier effects in n-MOSFET devices of advanced submicron CMOS technologies. 552-558
• 
  Ben Kaczer, Robin Degraeve, Philippe Roussel, Guido Groeseneken: Gate oxide breakdown in FET devices and circuits: From nanoscale physics to system-level reliability. 559-566
• 
  G. Néau, F. Martinez, M. Valenza, J. C. Vildeuil, E. Vincent, Frédéric Boeuf, F. Payet, K. Rochereau: Impact of strained-channel n-MOSFETs with a SiGe virtual substrate on dielectric interface quality evaluated by low frequency noise measurements. 567-572
• 
  C. Leyris, F. Martinez, M. Valenza, A. Hoffmann, J. C. Vildeuil: Random telegraph signal: A sensitive and nondestructive tool for gate oxide single trap characterization. 573-576
• 
  Cora Salm, Eric Hoekstra, Jay S. Kolhatkar, André J. Hof, Hans Wallinga, Jurriaan Schmitz: Low-frequency noise in hot-carrier degraded nMOSFETs. 577-580
• 
  R. Fernández, Rosana Rodríguez, M. Nafría, X. Aymerich: Effect of oxide breakdown on RS latches. 581-584
• 
  R. F. Steimle, R. Muralidhar, R. Rao, M. Sadd, C. T. Swift, J. Yater, B. Hradsky, S. Straub, H. Gasquet, L. Vishnubhotla, E. J. Prinz, T. Merchant, B. Acred, K. Chang, B. E. White Jr.: Silicon nanocrystal non-volatile memory for embedded memory scaling. 585-592
• 
  Cosimo Gerardi, Salvatore Lombardo, Giuseppe Ammendola, Giovanni Costa, Valentina Ancarani, Domenico Mello, Stella Giuffrida, Maria Cristina Plantamura: Study of nanocrystal memory integration in a Flash-like NOR device. 593-597
• 
  A. Sebastiani, R. Piagge, A. Modelli, G. Ghidini: High-K dielectrics for inter-poly application in non volatile memories. 598-601
• 
  A. Cester, A. Gasperin, N. Wrachien, Alessandro Paccagnella, V. Ancarani, Cosimo Gerardi: Ionising radiation and electrical stress on nanocrystal memory cell array. 602-605
• 
  Hsin-hao Hsu, Joseph Ya-min Lee: Electrical characterization of metal-oxide-high-k dielectric-oxide-semiconductor (MOHOS) structures for memory applications. 606-609
• 
  Guoqiao Tao, Cedric Ouvrard, Helene Chauveau, Som Nath: Experimental study of carrier transport in multi-layered structures. 610-614
• 
  Yosef Raskin, Asaad Salameh, David Betel, Yakov Roizin: Reliability of HTO based high-voltage gate stacks for flash memories. 615-618
• 
  Yu-Di Su, Wen-Chieh Shih, Joseph Ya-min Lee: The characterization of retention properties of metal-ferroelectric (PbZr_0.53Ti_0.47O₃)-insulator (Dy₂O₃, Y₂O₃)-semiconductor devices. 619-622
• 
  Stefan Holzer, Alireza Sheikholeslami, Markus Karner, Tibor Grasser, Siegfried Selberherr: Comparison of deposition models for a TEOS LPCVD process. 623-625
• 
  V. I. Turchanikov, A. N. Nazarov, V. S. Lysenko, V. Ostahov, O. Winkler, B. Spangenberg, H. Kurz: Charge accumulation in the dielectric of the nanocluster NVM MOS structures under anti- and unipolar W/E window formation. 626-630
• 
  Nicolas Baboux, C. Busseret, C. Plossu, P. Boivin: Peculiarities of electron tunnel injection to the drain of EEPROMs. 631-634
• 
  Martin Lemberger, A. Baunemann, Anton J. Bauer: Chemical vapor deposition of tantalum nitride films for metal gate application using TBTDET and novel single-source MOCVD precursors. 635-639
• 
  P. Fiorenza, R. Lo Nigro, V. Raineri, S. Lombardo, R. G. Toro, G. Malandrino, I. L. Fragalà: Defects induced anomalous breakdown kinetics in Pr₂O₃ by micro- and nano-characterization. 640-644
• 
  I. Z. Mitrovic, Octavian Buiu, Steve Hall, C. Bungey, T. Wagner, W. Davey, Y. Lu: Electrical and structural properties of hafnium silicate thin films. 645-648
• 
  Yu. Yu. Lebedinskii, A. V. Zenkevich: Effective work function of NiSi/HfO₂ gate stacks measured with X-ray photoelectron spectroscopy. 649-652
• 
  S. Dueñas, H. Castán, H. García, L. Bailón, K. Kukli, T. Hatanpää, Mikko Ritala, Markku Leskelä: Experimental observations of temperature-dependent flat band voltage transients on high-k dielectrics. 653-656
• 
  A. Zenkevich, Yu. Lebedinskii, G. Scarel, M. Fanciulli, A. Baturin, N. Lubovin: Degradation kinetics of ultrathin HfO₂ layers on Si(1 0 0) during vacuum annealing monitored with in situ XPS/LEIS and ex situ AFM. 657-659
• 
  Charles Leroux, Gérard Ghibaudo, Gilles Reimbold: Accurate determination of flat band voltage in advanced MOS structure. 660-664
• 
  Javier Martín-Martínez, Rosana Rodríguez, M. Nafría, X. Aymerich, James H. Stathis: Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror. 665-668
• 
  I. V. Grekhov, G. G. Kareva, S. E. Tyaginov, M. I. Vexler: Application of an MOS tunnel transistor for measurements of the tunneling parameters and of the parameters of electron energy relaxation in silicon. 669-672
• 
  M. Rommel, Anton J. Bauer, Heiner Ryssel: Quantitative oxide charge determination by photocurrent analysis. 673-677
• 
  Octavian Buiu, Steve Hall, O. Engstrom, B. Raeissi, M. Lemme, P. K. Hurley, K. Cherkaoui: Extracting the relative dielectric constant for "high-kappa layers" from CV measurements - Errors and error propagation. 678-681
• 
  Nicola Delmonte, B. E. Watts, G. Chiorboli, P. Cova, Roberto Menozzi: Test structures for dielectric spectroscopy of thin films at microwave frequencies. 682-685
• 
  Alexander A. Demkov, Onise Sharia, Xuhui Luo, Jaekwang Lee: Density functional theory of high-k dielectric gate stacks. 686-693
• 
  F. Sacconi, J. M. Jancu, M. Povolotskyi, A. Di Carlo: Full-band tunneling in high-kappa dielectric MOS structures. 694-696
• 
  Robert Entner, Tibor Grasser, Oliver Triebl, Hubert Enichlmair, Rainer Minixhofer: Negative bias temperature instability modeling for high-voltage oxides at different stress temperatures. 697-699
• 
  L. Pinzelli, M. Gros-Jean, Y. Bréchet, F. Volpi, A. Bajolet, J.-C. Giraudin: High-K dielectric deposition in 3D architectures: The case of Ta₂O₅ deposited with metal-organic precursor TBTDET. 700-703
• 
  Markus Karner, Andreas Gehring, M. Wagner, R. Entner, Stefan Holzer, Wolfgang Gös, M. Vasicek, Tibor Grasser, Hans Kosina, Siegfried Selberherr: VSP - A gate stack analyzer. 704-708
• 
  P. Boulenc, I. Devos: Templates for LaAlO₃ epitaxy on silicon. 709-713
• 
  Y. V. Gomeniuk, A. N. Nazarov, Ya. N. Vovk, V. S. Lysenko, Yi Lu, Octavian Buiu, Steve Hall, R. J. Potter, P. Chalker: Charge trapping and interface states in hydrogen annealed HfO₂-Si structures. 714-717
• 
  Simon A. Rushworth, Hywel Davies, Andrew J. Kingsley, Thomas Leese, Rajesh Odedra: Volatility and vapourisation characterisation of new precursors. 718-721
• 
  Y. Lu, Octavian Buiu, Steve Hall, I. Z. Mitrovic, W. Davey, R. J. Potter, P. R. Chalker: Tuneable electrical properties of hafnium aluminate gate dielectrics deposited by metal organic chemical vapour deposition. 722-725
• 
  I. P. Tyagulskyy, I. N. Osiyuk, V. S. Lysenko, A. N. Nazarov, Steve Hall, Octavian Buiu, Y. Lu, R. Potter, P. Chalker: Charge trapping characterization of MOCVD HfO₂/p-Si interfaces at cryogenic temperatures. 726-728
• 
  T. Nguyen, C. Busseret, L. Militaru, A. Poncet, D. Aimé, Nicolas Baboux, C. Plossu: Parameters extraction of hafnium based gate oxide capacitors. 729-732
• 
  M. Martyniuk, J. Antoszewski, C. A. Musca, J. M. Dell, L. Faraone: Dielectric thin films for MEMS-based optical sensors. 733-738
• 
  J. L. Regolini, D. Benoit, P. Morin: Passivation issues in active pixel CMOS image sensors. 739-742
• 
  G. Beylier, S. Bruyère, D. Benoit, G. Ghibaudo: Refined electrical analysis of two charge states transition characteristic of "borderless" silicon nitride. 743-747
• 
  S. B. Evseev: Eyring acceleration model in thick nitride/oxide dielectrics. 748-751
• 
  Nguyen Duy Cuong, Dong-Jin Kim, Byoung-Don Kang, Chang Soo Kim, Soon-Gil Yoon: Characterizations of high resistivity TiN_xO_y thin films for applications in thin film resistors. 752-754
• 
  Jong-Hyun Park, Cheng-Ji Xian, Nak-Jin Seong, Soon-Gil Yoon, Seung-Hyun Son, Hyung-Mi Chung, Jin-Suck Moon, Hyun-Joo Jin, Seung-Eun Lee, Jeong-Won Lee, Hyung-Dong Kang, Yeoul-Kyo Chung, Yong-Soo Oh: Development of embedded capacitor with bismuth-based pyrochlore thin films at low temperatures for printed circuit board applications. 755-758
• 
  R. A. Farrell, K. Cherkaoui, N. Petkov, H. Amenitsch, J. D. Holmes, P. K. Hurley, M. A. Morris: Physical and electrical properties of low dielectric constant self-assembled mesoporous silica thin films. 759-763
• 
  C. Guedj, G. Imbert, E. Martinez, C. Licitra, N. Rochat, V. Arnal: Modification of porous ultra-low K dielectric by electron-beam curing. 764-768
• 
  O. Cueto, Myriam Assous, François de Crecy, A. Toffoli, David Bouchu, M. Fayolle, Frédéric Boulanger: Development of a permittivity extraction method for ultra low k dielectrics integrated in advanced interconnects. 769-772
• 
  Maurice Kahn, Christophe Vallée, Emmanuel Defay, Catherine Dubourdieu, Marceline Bonvalot, Serge Blonkowski, Jean-Raoul Plaussu, Pierre Garrec, Thierry Baron: Improved electrical properties using SrTiO₃/Y₂O₃ bilayer dielectrics for MIM capacitor applications. 773-776
• 
  Liliana Caristia, Giuseppe Nicotra, Corrado Bongiorno, Nicola Costa, Sebastiano Ravesi, Salvo Coffa, Riccardo De Bastiani, Maria Grazia Grimaldi, Corrado Spinella: The influence of hydrogen and nitrogen on the formation of Si nanoclusters embedded in sub-stoichiometric silicon oxide layers. 777-780
• 
  T. S. Iwayama, T. Hama, D. E. Hole: RTA effects on the formation process of embedded luminescent Si nanocrystals in SiO₂. 781-785
• 
  Koutarou Tanaka, Hiroaki Tanaka, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi: High quality gate insulator film formation on SiC using by microwave-excited high-density plasma. 786-789
• 
  K. Cico, J. Kuzmik, D. Gregusová, R. Stoklas, Tibor Lalinsky, Alexandros G. Georgakilas, Dionyz Pogany, K. Fröhlich: Optimization and performance of Al₂O₃/GaN metal-oxide-semiconductor structures. 790-793
• 
  V. Em. Vamvakas, N. Vourdas, S. Gardelis: Optical characterization of Si-rich silicon nitride films prepared by low pressure chemical vapor deposition. 794-797
• 
  Giuseppe Currò, Marco Camalleri, Denise Calì, Francesca Monforte, Fortunato Neri: Carrier trapping in thin N₂O-grown oxynitride/oxide di-layer for PowerMOSFET devices. 798-801
• 
  S. Privitera, R. Modica, V. Cerantonio, G. Fallica, G. Pappalardo: LOCOS induced stress effects on SOI bipolar devices. 802-805
• 
  D. Corso, S. Aurite, E. Sciacca, D. Naso, Salvatore Lombardo, A. Santangelo, M. C. Nicotra, S. Cascino: Measurement of the hot carrier damage profile in LDMOS devices stressed at high drain voltage. 806-809
• 
  Giacomo Barletta, Giuseppe Currò: Evaluation of the generation mechanisms at surface and in the bulk of the silicon by current transient technique. 810-814
• 
  A. Cascio, G. Currò, A. Cavagnoli: Total ionizing dose reliability of thin SiO₂ in PowerMOSFET devices. 815-818
• 
  Giuseppe Currò, Marco Camalleri, Denise Calì, Francesca Monforte, Fortunato Neri: Interface states and traps in thin N₂O-grown oxynitride/oxide di-layer for PowerMOSFET devices. 819-821
• 
  F. Monforte, M. Camalleri, D. Calì, G. Currò, E. Fazio, F. Neri: Nitrogen bonding configurations near the oxynitride/silicon interface after oxynitridation in N₂O ambient of a thin SiO₂ gate. 822-824
• 
  P. Taechakumput, S. Taylor, Octavian Buiu, R. J. Potter, P. R. Chalker, A. C. Jones: Optical and electrical characterization of hafnium oxide deposited by liquid injection atomic layer deposition. 825-829
• 
  Susumu Tamura, Yasuhisa Omura: Ferroelectric characteristic of group IV elements added SrBi₂Ta₂O₉ thin films. 830-833
• 
  V. Em. Vamvakas, M. Theodoropoulou, S. N. Georga, C. A. Krontiras, M. N. Pisanias: Correlation between infrared transmission spectra and the interface trap density of SiO₂ films. 834-837

Volume 47, Number 6, June 2007

• 
  Tibor Grasser, Siegfried Selberherr: Editorial. 839-840
• 
  Dieter K. Schroder: Negative bias temperature instability: What do we understand? 841-852
• 
  Muhammad Ashraful Alam, Haldun Kufluoglu, D. Varghese, S. Mahapatra: A comprehensive model for PMOS NBTI degradation: Recent progress. 853-862
• 
  S. Chakravarthi, A. T. Krishnan, V. Reddy, S. Krishnan: Probing negative bias temperature instability using a continuum numerical framework: Physics to real world operation. 863-872
• 
  Helmut Puchner: NBTI product level reliability for a low-power SRAM technology. 873-879
• 
  M. Houssa, Marc Aoulaiche, Stefan De Gendt, Guido Groeseneken, Marc M. Heyns: Negative bias temperature instabilities in HfSiO(N)-based MOSFETs: Electrical characterization and modeling. 880-889
• 
  P. M. Lenahan: Deep level defects involved in MOS device instabilities. 890-898
• 
  N. H. Nickel: Hydrogen transport in doped and undoped polycrystalline silicon. 899-902
• 
  Sokrates T. Pantelides, L. Tsetseris, S. N. Rashkeev, X. J. Zhou, Daniel M. Fleetwood, Ronald D. Schrimpf: Hydrogen in MOSFETs - A primary agent of reliability issues. 903-911

• 
  E. Atanassova, Albena Paskaleva: Challenges of Ta₂O₅ as high-k dielectric for nanoscale DRAMs. 913-923
• 
  C. Y. Lu, H. C. Lin, Y. J. Lee: Dynamic NBTI characteristics of PMOSFETs with PE-SiN capping. 924-929
• 
  Rihito Kuroda, Akinobu Teramoto, Kazufumi Watanabe, Michihiko Mifuji, Takahisa Yamaha, Shigetoshi Sugawa, Tadahiro Ohmi: Circuit level prediction of device performance degradation due to negative bias temperature stress. 930-936
• 
  W. B. Chen, J. P. Xu, P. T. Lai, Y. P. Li, S. G. Xu: Gate leakage properties of MOS devices with tri-layer high-k gate dielectric. 937-943
• 
  Chieh-Ming Lai, Yean-Kuen Fang, Chien-Ting Lin, Chia-Wei Hsu, Wen-Kuan Yeh: The impacts of high tensile stress CESL and geometry design on device performance and reliability for 90 nm SOI nMOSFETs. 944-952
• 
  Partha Sarkar, Abhijit Mallik, Chandan Kumar Sarkar: Performance comparison of channel engineered deep sub-micrometer pseudo SOI n-MOSFETs. 953-958
• 
  Han-Chang Tsai: An investigation on the influence of electromagnetic interference induced in conducting wire of universal LEDs. 959-966
• 
  Chia-Huai Ho, Kuei-Shu Chang-Liao, Ya-Nan Huang, Tien-Ko Wang, T. C. Lu: Performance and reliability improvement of flash device by a novel programming method. 967-971
• 
  Hyong Tae Kim, Hae Jeong Yang, Seung Yub Baek: Iterative algorithm for automatic alignment by object transformation. 972-985
• 
  Dubravka Rocak, S. Macek, J. Sitek, Marko Hrovat, K. Bukat, Z. Drozd: A reliability study of the lead-free solder connections of miniature chip components on hybrid circuits. 986-995

• 
  Mile K. Stojcev: Mohamed Ilyas, Imad Mahgoud, Handbook of Sensor Networks: Compact Wireless and Wired Sensing Systems, Hardcover, pp 864, CRC Press, 2005, ISBN 0-8493-1968-4. 996-997

Volume 47, Number 7, July 2007

• 
  Wolfgang Stadler: Guest editorial. 999
• 
  T. Smedes, J. de Boet, T. Rödle: Selecting an appropriate ESD protection for discrete RF power LDMOSTs. 1000-1007
• 
  Wolfgang Soldner, Martin Streibl, U. Hodel, Marc Tiebout, Harald Gossner, Doris Schmitt-Landsiedel, Jung-Hoon Chun, Choshu Ito, Robert W. Dutton: RF ESD protection strategies: Codesign vs. low-C protection. 1008-1015
• 
  D. Trémouilles, Steven Thijs, Philippe Roussel, M. I. Natarajan, Vesselin K. Vassilev, Guido Groeseneken: Transient voltage overshoot in TLP testing - Real or artifact? 1016-1024
• 
  Tilo Brodbeck, Reinhold Gaertner: Experience in HBM ESD testing of high pin count devices. 1025-1029
• 
  Ciaran J. Brennan, Shunhua Chang, Min Woo, Kiran V. Chatty, Robert Gauthier: Implementation of diode and bipolar triggered SCRs for CDM robust ESD protection in 90 nm CMOS ASICs. 1030-1035
• 
  M. Etherton, J. Willemen, Wolfgang Wilkening, N. Qu, S. Mettler, Wolfgang Fichtner: Verification of CDM circuit simulation using an ESD evaluation circuit. 1036-1043
• 
  Ulrich Glaser, Kai Esmark, Martin Streibl, Christian Russ, Krzysztof Domanski, Mauro Ciappa, Wolfgang Fichtner: SCR operation mode of diode strings for ESD protection. 1044-1053
• 
  K. Reynders, P. Moens: Integration of an SCR in an active clamp. 1054-1059
• 
  Olivier Marichal, Geert Wybo, Benjamin Van Camp, Pieter Vanysacker, Bart Keppens: SCR-based ESD protection in nanometer SOI technologies. 1060-1068
• 
  Ciaran J. Brennan, Kiran V. Chatty, Jeff Sloan, Paul Dunn, Mujahid Muhammad, Robert Gauthier: Design automation to suppress cable discharge event (CDE) induced latchup in 90 nm CMOS ASICs. 1069-1073

• 
  Daniel M. Fleetwood, M. P. Rodgers, L. Tsetseris, X. J. Zhou, I. Batyrev, S. Wang, Ronald D. Schrimpf, Sokrates T. Pantelides: Effects of device aging on microelectronics radiation response and reliability. 1075-1085
• 
  D. S. Liu, M. K. Shih, W. H. Huang: Measurement and analysis of contact resistance in wafer probe testing. 1086-1094
• 
  J. Varghese, A. Dasgupta: An experimental approach to characterize rate-dependent failure envelopes and failure site transitions in surface mount assemblies. 1095-1102
• 
  Huang-Kuang Kung: Evaluation of sweep resistance of Q Auto-Loop and Square-Loop bonds for semiconductor packaging technology. 1103-1112
• 
  Keun-Soo Kim, Takayuki Imanishi, Katsuaki Suganuma, Minoru Ueshima, Rikiya Kato: Properties of low temperature Sn-Ag-Bi-In solder systems. 1113-1119
• 
  Mohd Khairuddin Md Arshad, Azman Jalar, Ibrahim Ahmad: Characterization of parasitic residual deposition on passivation layer in electroless nickel immersion gold process. 1120-1126
• 
  Chang-Lin Yeh, Yi-Shao Lai, Hsiao-Chuan Chang, Tsan-Hsien Chen: Empirical correlation between package-level ball impact test and board-level drop reliability. 1127-1134
• 
  Tomi Laurila, Toni T. Mattila, V. Vuorinen, J. S. Karppinen, Jue Li, M. Sippola, Jorma K. Kivilahti: Evolution of microstructure and failure mechanism of lead-free solder interconnections in power cycling and thermal shock tests. 1135-1144
• 
  Janusz Zarebski, Krzysztof Górecki: Spice-aided modelling of the UC3842 current mode PWM controller with selfheating taken into account. 1145-1152

• 
  Mile K. Stojcev: Richard Zurawski, ed., The Industrial Information Technology Handbook, Hardcover, CRC Press, 2005, pp 1936, ISBN 0-8493-1985-4. 1153-1154

Volume 47, Number 8, August 2007

• 
  Peter Ersland, Roberto Menozzi: Editorial. 1155
• 
  William J. Roesch, Steve Brockett: Field returns, a source of natural failure mechanisms. 1156-1165
• 
  Charles S. Whitman: Defining the safe operating area for HBTs with an InGaP emitter across temperature and current density. 1166-1174
• 
  K. W. Alt, R. E. Yeats, C. P. Hutchinson, D. K. Kuhn, T. S. Low, M. Iwamoto, M. E. Adamski, R. L. Shimon, T. E. Shirley, M. Bonse, F. G. Kellert, D. C. D'Avanzo: Determination of transistor infant failure probability in InGaP/GaAs heterojunction bipolar technology. 1175-1179
• 
  Craig Gaw, Thomas Arnold, Elizabeth Glass, Robert Martin: Reliability and performance of a true enhancement mode HIGFET for wireless applications. 1180-1187
• 
  P. J. van der Wel, J. R. de Beer, R. J. M. van Boxtel, Y. Y. Hsieh, Y. C. Wang: Effect of oval defects in GaAs on the reliability of SiN_x metal-insulator-metal capacitors. 1188-1193

• 
  P. K. Hurley, K. Cherkaoui, S. McDonnell, G. Hughes, A. W. Groenland: Characterisation and passivation of interface defects in (1 0 0)-Si/SiO₂/HfO₂/TiN gate stacks. 1195-1201
• 
  Ronen A. Berechman, Boris Revzin, Yoram Shapira: Correlating gate sinking and electrical performance of pseudomorphic high electron mobility transistors. 1202-1207
• 
  Shiou-Ying Cheng: Very wide current-regime operation of an InP/InGaAs tunneling emitter bipolar transistor (TEBT). 1208-1212
• 
  L. F. Mao: First-principles study of the effects of oxygen vacancy on hole tunneling current. 1213-1217
• 
  Paolo Fantini, Giorgio Ferrari: Low frequency noise and technology induced mechanical stress in MOSFETs. 1218-1221
• 
  Thomas Noulis, Stylianos Siskos, Gérard Sarrabayrouse: Comparison between BSIM4.X and HSPICE flicker noise models in NMOS and PMOS transistors in all operating regions. 1222-1227
• 
  Siva Prasad Devireddy, Bigang Min, Zeynep Çelik-Butler, Hsing-Huang Tseng, Philip J. Tobin, Ania Zlotnicka: Improved low frequency noise characteristics of sub-micron MOSFETs with TaSiN/TiN gate on ALD HfO₂ dielectric. 1228-1232
• 
  Bjorn Vermeersch, Gilbert De Mey: Influence of thermal contact resistance on thermal impedance of microelectronic structures. 1233-1238
• 
  Tsung-Yueh Tsai, Chang-Lin Yeh, Yi-Shao Lai, Rong-Sheng Chen: Response spectra analysis for undamped structural systems subjected to half-sine impact acceleration pulses. 1239-1245
• 
  K. K. Jinka, S. Ganesan, A. Dasgupta, S. Ling, A. Shapiro, D. Schatzel: Chip-on-Board (CoB) technology for low temperature environments. Part I: Wire profile modeling in unencapsulated chips. 1246-1250
• 
  B. A. E. van Hal, R. H. J. Peerlings, M. G. D. Geers, Olaf van der Sluis: Cohesive zone modeling for structural integrity analysis of IC interconnects. 1251-1261
• 
  M. A. Matin, J. G. A. Theeven, W. P. Vellinga, M. G. D. Geers: Correlation between localized strain and damage in shear-loaded Pb-free solders. 1262-1272
• 
  Yi-Shao Lai, Kuo-Ming Chen, Chin-Li Kao, Chiu-Wen Lee, Ying-Ta Chiu: Electromigration of Sn-37Pb and Sn-3Ag-1.5Cu/Sn-3Ag-0.5Cu composite flip-chip solder bumps with Ti/Ni(V)/Cu under bump metallurgy. 1273-1279
• 
  Kimihiro Yamanaka, Yutaka Tsukada, Katsuaki Suganuma: Studies on solder bump electromigration in Cu/Sn-3Ag-0.5Cu/Cu system. 1280-1287
• 
  Francesco Grasso, Stefano Manetti, Maria Cristina Piccirilli: A symbolic approach to design centering of analog circuits. 1288-1295
• 
  R. Habchi, C. Salame, P. Mialhe, A. Khoury: Switching times variation of power MOSFET devices after electrical stress. 1296-1299
• 
  W. H. Moy, Y.-L. Shen: On the failure path in shear-tested solder joints. 1300-1305
• 
  Mile K. Stojcev: S. Sitharama Iyengar, Richards R. Brooks, Eds., Distributed Sensor Networks, Hardcover, pp 1123, Chapman & Hall/CRC Press, 2005, ISBN 1-58488-383-9. 1306-1307
• 
  Mile K. Stojcev: Richard Zurawski, editor. Embedded Systems Handbook, Hardcover, pp 1112, CRC Press, Taylor & Francis Group, 2006, ISBN 0-8493-2824-1. 1308-1309

Volume 47, Numbers 9-11, September - November 2007

• 
  Nathalie Labat, André Touboul: Editorial. 1311-1312

• 
  Michael G. Khazhinsky: ESD protection strategies in advanced CMOS SOI ICs. 1313-1321
• 
  D. Goguenheim, D. Pic, Jean-Luc Ogier: Oxide reliability below 3 nm for advanced CMOS: Issues, characterization, and solutions. 1322-1329
• 
  Jaap Bisschop: Reliability methods and standards. 1330-1335

• 
  Cher Ming Tan, Nagarajan Raghavan: An approach to statistical analysis of gate oxide breakdown mechanisms. 1336-1342
• 
  P. Solomalala, J. Saiz, Michel Mermet-Guyennet, Alberto Castellazzi, Mauro Ciappa, X. Chauffleur, J. P. Fradin: Virtual reliability assessment of integrated power switches based on multi-domain simulation approach. 1343-1348
• 
  Javier Martín-Martínez, Simone Gerardin, Rosana Rodríguez, M. Nafría, X. Aymerich, A. Cester, Alessandro Paccagnella, G. Ghidini: Lifetime estimation of analog circuits from the electrical characteristics of stressed MOSFETs. 1349-1352
• 
  C. Bestory, François Marc, Hervé Levi: Statistical analysis during the reliability simulation. 1353-1357
• 
  Z. Wang, P. Zeelen, H. Tigelaar: Importance of multi-temp testing in automotive qualification and zero defects program. 1358-1361
• 
  Stefan Müller, Peter Egger: Investigation of low temperature SRAM and ROM failures to enable the replacement of cold test insertion by room temperature test. 1362-1365

• 
  Arnost Neugroschel, Gennadi Bersuker, Rino Choi: Applications of DCIV method to NBTI characterization. 1366-1372
• 
  D. Pic, D. Goguenheim, Jean-Luc Ogier: A comprehensive study of stress induced leakage current using a floating gate structure for direct applications in EEPROM memories. 1373-1377
• 
  Despina C. Moschou, M. A. Exarchos, Dimitrios N. Kouvatsos, G. J. Papaioannou, Apostolos T. Voutsas: Performance and reliability of SLS ELA polysilicon TFTs fabricated with novel crystallization techniques. 1378-1383
• 
  R. Bottini, S. Costantini, N. Galbiati, A. Ghetti, G. Ghidini, A. Mauri, C. Scozzari, A. Sebastiani: High voltage transistor degradation in NVM pump application. 1384-1388
• 
  R. Moonen, P. Vanmeerbeek, G. Lekens, Ward De Ceuninck, P. Moens, J. Boutsen: Lifetime modeling of intrinsic gate oxide breakdown at high temperature. 1389-1393
• 
  M. Gares, M. A. Belaïd, H. Maanane, M. Masmoudi, J. Marcon, K. Mourgues, Ph. Eudeline: Study of hot-carrier effects on power RF LDMOS device reliability. 1394-1399
• 
  Danijel Dankovic, Ivica Manic, Vojkan Davidovic, Snezana Djoric-Veljkovic, Snezana Golubovic, Ninoslav Stojadinovic: Negative bias temperature instabilities in sequentially stressed and annealed p-channel power VDMOSFETs. 1400-1405
• 
  M. Alwan, B. Beydoun, K. Ketata, M. Zoaeter: Gate charge behaviors in N-channel power VDMOSFETs during HEF and PBT stresses. 1406-1410
• 
  Sung Jun Jang, Dae Hyun Ka, Chong-Gun Yu, Kwan-Su Kim, Won-Ju Cho, Jong-Tae Park: Comparative study of NBTI as a function of Si film orientation and thickness in SOI pMOSFETs. 1411-1415
• 
  Stefano Aresu, Werner Kanert, Reinhard Pufall, Michael Goroll: Exceptional operative gate voltage induces negative bias temperature instability (NBTI) on n-type trench DMOS transistors. 1416-1418
• 
  A. Boukhenoufa, L. Pichon, C. Cordier: Two-dimensional numerical simulations of 1/f noise by GR mechanisms in thin film transistors: Effects of induced defect technology. 1419-1423
• 
  M. Lanza, M. Porti, M. Nafría, Guenther Benstetter, Werner Frammelsberger, H. Ranzinger, E. Lodermeier, G. Jaschke: Influence of the manufacturing process on the electrical properties of thin (k stacks observed with CAFM. 1424-1428
• 
  Anand Inani, Victor Koldyaev, Spencer Graves: Accelerated testing for time dependent dielectric breakdown (TDDB) evaluation of embedded DRAM capacitors using tantalum pentoxide. 1429-1433
• 
  F. V. Farmakis, Giannis P. Kontogiannopoulos, Dimitrios N. Kouvatsos, Apostolos T. Voutsas: Degradation of double-gate polycrystalline silicon TFTs due to hot carrier stress. 1434-1438
• 
  Hubert Enichlmair, S. Carniello, Jong Mun Park, Rainer Minixhofer: Analysis of hot carrier effects in a 0.35 µm high voltage n-channel LDMOS transistor. 1439-1443

• 
  Augusto Tazzoli, F. A. Marino, M. Cordoni, A. Benvenuti, P. Colombo, Enrico Zanoni, Gaudenzio Meneghesso: Holding voltage investigation of advanced SCR-based protection structures for CMOS technology. 1444-1449
• 
  Michael Heer, Sergey Bychikhin, W. Mamanee, Dionyz Pogany, A. Heid, P. Grombach, M. Klaussner, W. Soppa, B. Ramler: Experimental and numerical analysis of current flow homogeneity in low voltage SOI multi-finger gg-NMOS and NPN ESD protection devices. 1450-1455
• 
  Yuan Gao, Nicolas Guitard, Christophe Salamero, Marise Bafleur, Laurent Bary, Laurent Escotte, Patrick Gueulle, Lionel Lescouzères: Identification of the physical signatures of CDM induced latent defects into a DC-DC converter using low frequency noise measurements. 1456-1461
• 
  P. Coppens, G. Jenicot, H. Casier, F. De Pestel, F. Depuydt, N. Martens, P. Moens: TLP Characterization of large gate width devices. 1462-1467
• 
  J. R. Lloyd: Black's law revisited - Nucleation and growth in electromigration failure. 1468-1472
• 
  Linda Milor, Changsoo Hong: Backend dielectric breakdown dependence on linewidth and pattern density. 1473-1477
• 
  Changsoo Hong, Linda Milor: Modeling of the breakdown mechanisms for porous copper/low-k process flows. 1478-1482
• 
  Cadmus A. Yuan, Olaf van der Sluis, G. Q. (Kouchi) Zhang, Leo J. Ernst, Willem D. van Driel, Richard B. R. van Silfhout: Molecular simulation on the material/interfacial strength of the low-dielectric materials. 1483-1491
• 
  Alessandro Marras, M. Impronta, Ilaria De Munari, M. G. Valentini, A. Scorzoni: Reliability assessment of multi-via Cu-damascene structures by wafer-level isothermal electromigration tests. 1492-1496
• 
  Wei Li, Cher Ming Tan: Enhanced finite element modelling of Cu electromigration using ANSYS and matlab. 1497-1501
• 
  Shih-Hung Chen, Ming-Dou Ker: Active ESD protection circuit design against charged-device-model ESD event in CMOS integrated circuits. 1502-1505
• 
  C. C. Chiu, H. H. Chang, C. C. Lee, C. C. Hsia, K. N. Chiang: Reliability of interfacial adhesion in a multi-level copper/low-k interconnect structure. 1506-1511
• 
  Michael Goroll, Werner Kanert, Reinhard Pufall, Stefano Aresu: Analysis of ESD protection structure behaviour after ageing as new approach for system level reliability of automotive power devices. 1512-1516

• 
  Felix Beaudoin, Kevin Sanchez, Philippe Perdu: Dynamic laser stimulation techniques for advanced failure analysis and design debug applications. 1517-1522
• 
  Rudolf Schlangen, Uwe Kerst, Christian Boit, Tahir Malik, Rajesh Jain, Ted Lundquist: Non destructive 3D chip inspection with nano scale potential by use of backside FIB and backscattered electron microscopy. 1523-1528
• 
  A. Pugatschow, R. Heiderhoff, L. J. Balk: Time resolved determination of electrical field distributions within dynamically biased power devices by spectral EBIC investigations. 1529-1533
• 
  Euan Ramsay, K. A. Serrels, M. J. Thomson, Andrew J. Waddie, R. J. Warburton, Mohammed R. Taghizadeh, D. T. Reid: Three-dimensional nanometric sub-surface imaging of a silicon flip-chip using the two-photon optical beam induced current method. 1534-1538
• 
  V. Dubec, Sergey Bychikhin, Dionyz Pogany, Erich Gornik, Tilo Brodbeck, Wolfgang Stadler: Backside interferometric methods for localization of ESD-induced leakage current and metal shorts. 1539-1544
• 
  Peter Egger, Markus Grützner, Christian Burmer, Fabien Dudkiewicz: Application of time resolved emission techniques within the failure analysis flow. 1545-1549
• 
  Stephane Bianic, Stéphanie Allemand, Grégory Kerrosa, Pascal Scafidi, Didier Renard: Advanced backside failure analysis in 65 nm CMOS technology. 1550-1554
• 
  Cher Ming Tan, Stanny Yanuar, Tai Chong Chai: Finite element modeling of capacitive coupling voltage contrast. 1555-1560
• 
  M. Reissner: Fault localization at high voltage devices using thermally induced voltage alteration (TIVA). 1561-1564
• 
  Joy Y. Liao, Howard L. Marks, F. Beaudoin: OBIRCH analysis of electrically stressed advanced graphic ICs. 1565-1568
• 
  S. Debleds, J. P. Rebrasse, L. Dantas de Morais, I. Frapreau, R. Perdreau, B. Morillon: Localization of sensitive areas of power AC switch under thermal laser stimulation. 1569-1573

• 
  Peter Jacob, Giovanni Nicoletti, Florian Hauf: Device decapsulated (and/or depassivated) - Retest ok - What happened? 1574-1579
• 
  Arijit Roy, Cher Ming Tan, Sean J. O'Shea, Kedar Hippalgaonkar, Wulf Hofbauer: Room temperature observation of point defect on gold surface using thermovoltage mapping. 1580-1584
• 
  R. Zelsacher, A. C. G. Wood, E. Bacher, E. Prax, K. Sorschag, J. Krumrey, J. Baumgartl: A novel SIMS based approach to the characterization of the channel doping profile of a trench MOSFET. 1585-1589
• 
  A. Crosson, L. Escotte, M. Bafleur, D. Talbourdet, L. Crétinon, Philippe Perdu, G. Perez: Long-term reliability of silicon bipolar transistors subjected to low constraints. 1590-1594
• 
  C. N. Mc Auley, Andreas Rummel, F. W. Keating, Stephan Kleindiek: 3D failure analysis in depth profiles of sequentially made FIB cuts. 1595-1598
• 
  J. Adrian, N. Rodriguez, F. Essely, G. Haller, C. Grosjean, A. Portavoce, C. Girardeaux: Investigation of a new method for dopant characterization. 1599-1603
• 
  Hung-Sung Lin, Chun-Ming Chen, Kuo-Hsiung Chen, Afung Wang, C. H. Chao: A case study of defects due to process marginalities in deep sub-micron technology. 1604-1608
• 
  C. Le Roux, L. Lopez, Abdellatif Firiti, Jean-Luc Ogier, Frédéric Lalande, Romain Laffont, Gilles Micolau: A new method to quantify retention-failed cells of an EEPROM CAST. 1609-1613
• 
  L. Dantas de Morais, F. Allanic, F. Roqueta, J. P. Rebrasse: Thermal approach of defects generation on copper/organic dielectric interface due to SEM inspections. 1614-1618

• 
  Mitsuo Fukuda: Reliability of semiconductor lasers used in current communication systems and sensing equipment. 1619-1624
• 
  Matteo Meneghini, L. Trevisanello, C. Sanna, G. Mura, Massimo Vanzi, Gaudenzio Meneghesso, Enrico Zanoni: High temperature electro-optical degradation of InGaN/GaN HBLEDs. 1625-1629
• 
  M. Bouya, D. Carisetti, N. Malbert, Nathalie Labat, Philippe Perdu, J. C. Clement, M. Bonnet, G. Pataut: Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC. 1630-1633
• 
  D. Lachenal, A. Bravaix, F. Monsieur, Yannick Rey-Tauriac: Degradation mechanism understanding of NLDEMOS SOI in RF applications. 1634-1638
• 
  M. Faqir, G. Verzellesi, Fausto Fantini, Francesca Danesin, F. Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni, Anna Cavallini, Antonio Castaldini, Nathalie Labat, André Touboul, Christian Dua: Characterization and analysis of trap-related effects in AlGaN-GaN HEMTs. 1639-1642
• 
  O. Pajona, Christelle Aupetit-Berthelemot, Jean-Michel Dumas: A study of metamorphic HEMT technological improvements: Impact on parasitic effect electrical models. 1643-1648
• 
  Sergey Bychikhin, T. Swietlik, Tadeusz Suski, S. Porowski, Piotr Perlin, Dionyz Pogany: Thermal analysis of InGaN/GaN (GaN substrate) laser diodes using transient interferometric mapping. 1649-1652
• 
  P. Burgaud, L. Constancias, G. Martel, C. Savina, D. Mesnager: Preliminary reliability assessment and failure physical analysis on AlGaN/GaN HEMTs COTS. 1653-1657

• 
  Ming-Chih Yew, Chan-Yen Chou, Kuo-Ning Chiang: Reliability assessment for solders with a stress buffer layer using ball shear strength test and board-level finite element analysis. 1658-1662
• 
  W. C. Maia Filho, M. Brizoux, Hélène Frémont, Yves Danto: Torsion test applied for reballing and solder paste volume evaluation. 1663-1667
• 
  Geneviève Duchamp, D. Castagnet, Alain Meresse: Near-field EMC study to improve electronic component reliability. 1668-1672
• 
  Hak Sung Kim, Ho Geon Song: Investigation of moisture-induced failures of stacked-die package. 1673-1679
• 
  Manoubi Auguste Bahi, Pascal Lecuyer, Hélène Frémont, Jean-Pierre Landesman: Sequential environmental stresses tests qualification for automotive components. 1680-1684
• 
  Xiaosong Ma, Kaspar M. B. Jansen, Leo J. Ernst, W. D. van Driel, Olaf van der Sluis, G. Q. Zhang: Characterization of moisture properties of polymers for IC packaging. 1685-1689

• 
  Michel Mermet-Guyennet, X. Perpiñà, M. Piton: Revisiting power cycling test for better life-time prediction in traction. 1690-1695
• 
  Andrea Irace, Giovanni Breglio, Paolo Spirito: New developments of THERMOS³, a tool for 3D electro-thermal simulation of smart power MOSFETs. 1696-1700
• 
  X. Perpiñà, M. Piton, Michel Mermet-Guyennet, Xavier Jordà, José Millán: Local thermal cycles determination in thermosyphon-cooled traction IGBT modules reproducing mission profiles. 1701-1706
• 
  D. Barlini, Mauro Ciappa, Michel Mermet-Guyennet, Wolfgang Fichtner: Measurement of the transient junction temperature in MOSFET devices under operating conditions. 1707-1712
• 
  Alberto Castellazzi, Mauro Ciappa, Wolfgang Fichtner, M. Piton, Michel Mermet-Guyennet: A study of the threshold-voltage suitability as an application-related reliability indicator for planar-gate non-punch-through IGBTs. 1713-1718
• 
  M. Bouarroudj, Zoubir Khatir, J. P. Ousten, F. Badel, L. Dupont, Stéphane Lefebvre: Degradation behavior of 600 V-200 A IGBT modules under power cycling and high temperature environment conditions. 1719-1724
• 
  Jesús Urresti-Ibañez, Alberto Castellazzi, M. Piton, J. Rebollo, Michel Mermet-Guyennet, Mauro Ciappa: Robustness test and failure analysis of IGBT modules during turn-off. 1725-1729
• 
  A. Benmansour, Stephane Azzopardi, J. C. Martin, E. Woirgard: Trench IGBT failure mechanisms evolution with temperature and gate resistance under various short-circuit conditions. 1730-1734
• 
  B. Khong, M. Legros, Patrick Tounsi, Ph. Dupuy, X. Chauffleur, C. Levade, G. Vanderschaeve, E. Scheid: Characterization and modelling of ageing failures on power MOSFET devices. 1735-1740
• 
  M. Holz, G. Hultsch, T. Scherg, R. Rupp: Reliability considerations for recent Infineon SiC diode releases. 1741-1745
• 
  Carmine Abbate, G. Busatto, L. Fratelli, Francesco Iannuzzo, B. Cascone, R. Manzo: The robustness of series-connected high power IGBT modules. 1746-1750
• 
  W. Lajnef, J.-M. Vinassa, Olivier Briat, H. El Brouji, E. Woirgard: Monitoring fading rate of ultracapacitors using online characterization during power cycling. 1751-1755
• 
  Giovanni Breglio, Andrea Irace, E. Napoli, Paolo Spirito, K. Hamada, T. Nishijima, T. Ueta: Study of a failure mechanism during UIS switching of planar PT-IGBT with current sense cell. 1756-1760
• 
  F. Lang, U. Scheuermann: Reliability of spring pressure contacts under environmental stress. 1761-1766
• 
  L. Dupont, Stéphane Lefebvre, M. Bouaroudj, Zoubir Khatir, Jean-Claude Faugières: Failure modes on low voltage power MOSFETs under high temperature application. 1767-1772
• 
  Ly. Benbahouche, A. Merabet, A. Zegadi: Numerical analysis and comparative study of short circuit stress in IGBTs devices (IR, IXYS). 1773-1778
• 
  T. Lhommeau, X. Perpiñà, C. Martin, R. Meuret, Michel Mermet-Guyennet, M. Karama: Thermal fatigue effects on the temperature distribution inside IGBT modules for zone engine aeronautical applications. 1779-1783
• 
  X. Perpiñà, Alberto Castellazzi, M. Piton, Michel Mermet-Guyennet, José Millán: Failure-relevant abnormal events in power inverters considering measured IGBT module temperature inhomogeneities. 1784-1789
• 
  Michael Glavanovics, Helmut Köck, Vladimir Kosel, Tobias Smorodin: Flexible active cycle stress testing of smart power switches. 1790-1794
• 
  Jae-Seong Jeong, Soon-Ha Hong, Sang-Deuk Park: Field failure mechanism and improvement of EOS failure of integrated IGBT inverter modules. 1795-1799
• 
  A. Benmansour, Stephane Azzopardi, J. C. Martin, E. Woirgard: A step by step methodology to analyze the IGBT failure mechanisms under short circuit and turn-off inductive conditions using 2D physically based device simulation. 1800-1805

• 
  D. M. Tanner, T. B. Parson, A. D. Corwin, J. A. Walraven, J. W. Wittwer, B. L. Boyce, S. R. Winzer: Science-based MEMS reliability methodology. 1806-1811
• 
  E. Papandreou, M. Lamhamdi, C. M. Skoulikidou, Patrick Pons, George Papaioannou, Robert Plana: Structure dependent charging process in RF MEMS capacitive switches. 1812-1817
• 
  Jinyu Ruan, Nicolas Nolhier, M. Bafleur, L. Bary, Fabio Coccetti, T. Lisec, Robert Plana: Electrostatic discharge failure analysis of capacitive RF MEMS switches. 1818-1822
• 
  Willem D. van Driel, D. G. Yang, Cadmus A. Yuan, M. van Kleef, G. Q. (Kouchi) Zhang: Mechanical reliability challenges for MEMS packages: Capping. 1823-1826

• 
  J. L. Leray: Effects of atmospheric neutrons on devices, at sea level and in avionics embedded systems. 1827-1835
• 
  V. Maingot, Jean Baptiste Ferron, Régis Leveugle, Vincent Pouget, Alexandre Douin: Configuration errors analysis in SRAM-based FPGAs: Software tool and practical results. 1836-1840
• 
  Vojkan Davidovic, Dimitrios N. Kouvatsos, Ninoslav Stojadinovic, Apostolos T. Voutsas: Influence of polysilicon film thickness on radiation response of advanced excimer laser annealed polycrystalline silicon thin film transistors. 1841-1845

Volume 47, Number 12, December 2007

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  Peter Sandborn, Michael G. Pecht: Introduction to special section on electronic systems prognostics and health management. 1847-1848
• 
  Jie Gu, Donald Barker, Michael Pecht: Prognostics implementation of electronics under vibration loading. 1849-1856
• 
  E. Scanff, K. L. Feldman, S. Ghelam, Peter Sandborn, M. Glade, B. Foucher: Life cycle cost impact of using prognostic health management (PHM) for helicopter avionics. 1857-1864
• 
  Leon Lopez: Advanced electronic prognostics through system telemetry and pattern recognition methods. 1865-1873
• 
  Douglas W. Brown, Patrick W. Kalgren, Carl S. Byington, Michael J. Roemer: Electronic prognostics - A case study using global positioning system (GPS). 1874-1881
• 
  Richard Heine, Donald Barker: Simplified terrain identification and component fatigue damage estimation model for use in a health and usage monitoring system. 1882-1888
• 
  Peter A. Sandborn, Chris Wilkinson: A maintenance planning and business case development model for the application of prognostics and health management (PHM) to electronic systems. 1889-1901
• 
  Douglas Goodman, James Hofmeister, Justin Judkins: Electronic prognostics for switched mode power supplies. 1902-1906
• 
  Pradeep Lall, Madhura Hande, Chandan Bhat, Nokibul Islam, Jeff Suhling, Jay Lee: Feature extraction and damage-precursors for prognostication of lead-free electronics. 1907-1920
• 
  Vincent Rouet, Frédéric Minault, Guillaume Diancourt, Bruno Foucher: Concept of smart integrated life consumption monitoring system for electronics. 1921-1927
• 
  Yoshikuni Nakadaira, Seyoung Jeong, Jongbo Shim, Jaiseok Seo, Sunhee Min, Taeje Cho, Sayoon Kang, Seyong Oh: Growth of tin whiskers for lead-free plated leadframe packages in high humid environments and during thermal cycling. 1928-1949
• 
  Marina Santo Zarnik, Darko Belavic, Franc Novak: Finite-element model-based fault diagnosis, a case study of a ceramic pressure sensor structure. 1950-1957
• 
  Jinlin Wang: The effects of rheological and wetting properties on underfill filler settling and flow voids in flip chip packages. 1958-1966

• 
  Artur Wymyslowski: Thermal, mechanical and multi-physics simulation and experiments in micro-electronics and micro-systems. 1967-1968
• 
  W. D. van Driel: Facing the challenge of designing for Cu/low-k reliability. 1969-1974
• 
  Olaf van der Sluis, R. A. B. Engelen, Richard B. R. van Silfhout, W. D. van Driel, M. A. J. van Gils: Efficient damage sensitivity analysis of advanced Cu/low-k bond pad structures by means of the area release energy criterion. 1975-1982
• 
  M. van Soestbergen, Leo J. Ernst, Kaspar M. B. Jansen, W. D. van Driel: Measuring the through-plane elastic modulus of thin polymer films in situ. 1983-1988
• 
  Tomasz Falat, Artur Wymyslowski, Jana Kolbe, Kaspar M. B. Jansen, Leo J. Ernst: Influence of matrix viscoelastic properties on thermal conductivity of TCA - Numerical approach. 1989-1996
• 
  Zhiheng Huang, Paul P. Conway, Rachel C. Thomson: Microstructural considerations for ultrafine lead free solder joints. 1997-2006
• 
  G. P. Zhang, C. A. Volkert, R. Schwaiger, R. Mönig, O. Kraft: Fatigue and thermal fatigue damage analysis of thin metal films. 2007-2013
• 
  Dhruv Bhate, Martin L. Dunn: Adhesion of arbitrary-shaped thin-film microstructures. 2014-2024

• 
  M. Waleed Shinwari, M. Jamal Deen, Dolf Landheer: Study of the electrolyte-insulator-semiconductor field-effect transistor (EISFET) with applications in biosensor design. 2025-2057
• 
  L. Michalas, M. Exarchos, G. J. Papaioannou, Dimitrios N. Kouvatsos, Apostolos T. Voutsas: An experimental study of the thermally activated processes in polycrystalline silicon thin film transistors. 2058-2064
• 
  Kerem Akarvardar, Abdelkarim Mercha, Eddy Simoen, Vaidyanathan Subramanian, Cor Claeys, Pierre Gentil, Sorin Cristoloveanu: High-temperature performance of state-of-the-art triple-gate transistors. 2065-2069
• 
  C. Petit, D. Zander: Stress induced gate-drain leakage current in ultra-thin gate oxide. 2070-2081
• 
  Z. Tang, P. D. Ye, D. Lee, C. R. Wie: Electrical measurements of voltage stressed Al₂O₃/GaAs MOSFET. 2082-2087
• 
  E. Atanassova, D. Spassov, Albena Paskaleva: Metal gates and gate-deposition-induced defects in Ta₂O₅ stack capacitors. 2088-2093
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