 | 2012 |
|---|
| 9 |       | F. Dubois,
R. Moutou-Pitti,
B. Picoux,
C. Petit:
Finite element model for crack growth process in concrete bituminous.
Advances in Engineering Software 44(1): 35-43 (2012) |
| 8 | | A. El Ayadi,
B. Picoux,
Gaëlle Lefeuve-Mesgouez,
Arnaud Mesgouez,
C. Petit:
An improved dynamic model for the study of a flexible pavement.
Advances in Engineering Software 44(1): 44-53 (2012) |
| 2007 |
|---|
| 7 | | C. Petit,
D. Zander:
Stress induced gate-drain leakage current in ultra-thin gate oxide.
Microelectronics Reliability 47(12): 2070-2081 (2007) |
| 6 | | C. Petit,
D. Zander:
Low voltage stress induced leakage current and time to breakdown in ultra-thin (1.2-2.3nm) oxides.
Microelectronics Reliability 47(2-3): 401-408 (2007) |
| 2005 |
|---|
| 5 | | C. Petit,
A. Meinertzhagen,
D. Zander,
O. Simonetti,
M. Fadlallah,
T. Maurel:
Low voltage SILC and P- and N-MOSFET gate oxide reliability.
Microelectronics Reliability 45(3-4): 479-485 (2005) |
| 2003 |
|---|
| 4 | | M. Fadlallah,
C. Petit,
A. Meinertzhagen,
G. Ghibaudo,
M. Bidaud,
O. Simonetti,
F. Guyader:
Influence of nitradation in ultra-thin oxide on the gate current degradation of N and PMOS devices.
Microelectronics Reliability 43(9-11): 1433-1438 (2003) |
| 3 | | D. Zander,
F. Saigné,
A. Meinertzhagen,
C. Petit:
Contribution of oxide traps on defect creation and LVSILC conduction in ultra thin gate oxide devices.
Microelectronics Reliability 43(9-11): 1489-1493 (2003) |
| 2001 |
|---|
| 2 | | D. Zander,
C. Petit,
F. Saigné,
A. Meinertzhagen:
High field stress at and above room temperature in 2.3 nm thick oxides.
Microelectronics Reliability 41(7): 1023-1026 (2001) |
| 1996 |
|---|
| 1 | | Richard Egli,
C. Petit,
Neil F. Stewart:
Moving coordinate frames for representation and visualization in four dimensions.
Computers & Graphics 20(6): 905-919 (1996) |
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