 | 2012 |
|---|
| 5 |       | J. Hájek,
V. Papez,
B. Kojecký:
Investigation of flicker noise in silicon diodes under reverse bias.
Microelectronics Reliability 52(3): 469-474 (2012) |
| 2008 |
|---|
| 4 | | V. Papez,
B. Kojecký,
D. Sámal:
Reliability of reverse properties of power semiconductor devices: : Influence of surface dielectric layer and its experimental verification.
Microelectronics Journal 39(6): 851-856 (2008) |
| 2006 |
|---|
| 3 | | V. Benda,
M. Cernik,
V. Papez:
OCVD carrier lifetime in P+NN+ diode structures with axial carrier lifetime gradient.
Microelectronics Journal 37(3): 217-222 (2006) |
| 2 | | B. Kojecký,
V. Papez,
D. Sámal:
Conditions of temperature and time instability occurrence of reverse-biased semiconductor power devices.
Microelectronics Journal 37(3): 269-274 (2006) |
| 2003 |
|---|
| 1 | | V. Papez,
B. Kojecký,
J. Kozísek,
J. Hejhal:
Transient effects on high voltage diode stack under reverse bias.
Microelectronics Reliability 43(4): 557-564 (2003) |
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