F. Monsieur

	2008
11		M. Diop, N. Revil, M. Marin, F. Monsieur, P. Chevalier, G. Ghibaudo: Impact of inside spacer process on fully self-aligned 250 GHz SiGe: C HBTs reliability performances: a-Si vs. nitride. Microelectronics Reliability 48(8-9): 1198-1201 (2008)
	2007
10		D. Lachenal, A. Bravaix, F. Monsieur, Yannick Rey-Tauriac: Degradation mechanism understanding of NLDEMOS SOI in RF applications. Microelectronics Reliability 47(9-11): 1634-1638 (2007)
	2005
9		G. Ribes, S. Bruyère, M. Denais, F. Monsieur, V. Huard, D. Roy, G. Ghibaudo: Multi-vibrational hydrogen release: Physical origin of Tbd, Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides. Microelectronics Reliability 45(12): 1842-1854 (2005)
	2003
8		F. Monsieur, E. Vincent, V. Huard, S. Bruyère, D. Roy, Thomas Skotnicki, G. Pananakakis, G. Ghibaudo: On the role of holes in oxide breakdown mechanism in inverted nMOSFETs. Microelectronics Reliability 43(8): 1199-1202 (2003)
7		G. Ribes, S. Bruyère, F. Monsieur, D. Roy, V. Huard: New insights into the change of voltage acceleration and temperature activation of oxide breakdown. Microelectronics Reliability 43(8): 1211-1214 (2003)
	2002
6		D. Roy, S. Bruyère, E. Vincent, F. Monsieur: Series resistance and oxide thickness spread influence on Weibull breakdown distribution: New experimental correction for reliability projection improvement. Microelectronics Reliability 42(9-11): 1497-1500 (2002)
5		F. Monsieur, E. Vincent, D. Roy, S. Bruyère, G. Pananakakis, G. Ghibaudo: Gate oxide Reliability assessment optimization. Microelectronics Reliability 42(9-11): 1505-1508 (2002)
	2001
4		F. Monsieur, E. Vincent, G. Pananakakis, G. Ghibaudo: Wear-out, breakdown occurrence and failure detection in 18-25 Å ultrathin oxides. Microelectronics Reliability 41(7): 1035-1039 (2001)
3		F. Monsieur, E. Vincent, D. Roy, S. Bruyère, G. Pananakakis, G. Ghibaudo: Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions. Microelectronics Reliability 41(9-10): 1295-1300 (2001)
2		M. Fadlallah, A. Szewczyk, C. Giannakopoulos, B. Cretu, F. Monsieur, T. Devoivre, Jalal Jomaah, G. Ghibaudo: Low frequency noise and reliability properties pf 0.12 mum CMOS devices with Ta2O5 as gate dielectrics. Microelectronics Reliability 41(9-10): 1361-1366 (2001)
1		S. Bruyère, F. Monsieur, D. Roy, E. Vincent, G. Ghibaudo: Failures in ultrathin oxides: Stored energy or carrier energy driven? Microelectronics Reliability 41(9-10): 1367-1372 (2001)

Coauthor Index

1	A. Bravaix	[10]
2	S. Bruyère	[1] [3] [5] [6] [7] [8] [9]
3	P. Chevalier	[11]
4	B. Cretu	[2]
5	M. Denais	[9]
6	T. Devoivre	[2]
7	M. Diop	[11]
8	M. Fadlallah	[2]
9	Gérard Ghibaudo (G. Ghibaudo)	[1] [2] [3] [4] [5] [8] [9] [11]
10	C. Giannakopoulos	[2]
11	V. Huard	[7] [8] [9]
12	Jalal Jomaah	[2]
13	D. Lachenal	[10]
14	M. Marin	[11]
15	G. Pananakakis	[3] [4] [5] [8]
16	N. Revil	[11]
17	Yannick Rey-Tauriac	[10]
18	G. Ribes	[7] [9]
19	D. Roy	[1] [3] [5] [6] [7] [8] [9]
20	Thomas Skotnicki	[8]
21	A. Szewczyk	[2]
22	E. Vincent	[1] [3] [4] [5] [6] [8]

Last update Mon Jun 4 20:40:43 2012 CET by the DBLP Team — Data released under the ODC-BY 1.0 license — See also our legal information page