 | 2010 |
| 6 |  | Stanislav Tyaginov,
Ivan Starkov,
Oliver Triebl,
Johann Cervenka,
C. Jungemann,
S. Carniello,
J. M. Park,
Hubert Enichlmair,
Markus Karner,
Ch. Kernstock,
E. Seebacher,
Rainer Minixhofer,
Hajdin Ceric,
Tibor Grasser:
Interface traps density-of-states as a vital component for hot-carrier degradation modeling.
Microelectronics Reliability 50(9-11): 1267-1272 (2010) |
| 2008 |
| 5 |  | M. Schrems,
M. Knaipp,
Hubert Enichlmair,
V. Vescoli,
Rainer Minixhofer,
E. Seebacher,
F. Leisenberger,
E. Wachmann,
G. Schatzberger,
H. Gensinger:
Scalable High Voltage CMOS technology for Smart Power and sensor applications.
Elektrotechnik und Informationstechnik 125(4): 109-117 (2008) |
| 2007 |
| 4 |  | Robert Entner,
Tibor Grasser,
Oliver Triebl,
Hubert Enichlmair,
Rainer Minixhofer:
Negative bias temperature instability modeling for high-voltage oxides at different stress temperatures.
Microelectronics Reliability 47(4-5): 697-699 (2007) |
| 3 |  | Hubert Enichlmair,
S. Carniello,
J. M. Park,
Rainer Minixhofer:
Analysis of hot carrier effects in a 0.35 µm high voltage n-channel LDMOS transistor.
Microelectronics Reliability 47(9-11): 1439-1443 (2007) |
| 2006 |
| 2 |  | Federico Baronti,
Paolo D'Abramo,
M. Knaipp,
Rainer Minixhofer,
Roberto Roncella,
Roberto Saletti,
M. Schrems,
Riccardo Serventi,
V. Vescoli:
FlexRay transceiver in a 0.35 µm CMOS high-voltage technology.
DATE Designers' Forum 2006: 201-205 |
| 2004 |
| 1 |  | Stefan Holzer,
Rainer Minixhofer,
Clemens Heitzinger,
Johannes Fellner,
Tibor Grasser,
Siegfried Selberherr:
Extraction of material parameters based on inverse modeling of three-dimensional interconnect fusing structures.
Microelectronics Journal 35(10): 805-810 (2004) |