José Millán

	2008
10		V. Banu, P. Brosselard, Xavier Jordà, J. Montserrat, Philippe Godignon, José Millán: Behaviour of 1.2 kV SiC JBS diodes under repetitive high power stress. Microelectronics Reliability 48(8-9): 1444-1448 (2008)
	2007
9		Miquel Vellvehí, Xavier Jordà, Philippe Godignon, Carles Ferrer, José Millán: Coupled electro-thermal simulation of a DC/DC converter. Microelectronics Reliability 47(12): 2114-2121 (2007)
8		X. Perpiñà, M. Piton, Michel Mermet-Guyennet, Xavier Jordà, José Millán: Local thermal cycles determination in thermosyphon-cooled traction IGBT modules reproducing mission profiles. Microelectronics Reliability 47(9-11): 1701-1706 (2007)
7		X. Perpiñà, Alberto Castellazzi, M. Piton, Michel Mermet-Guyennet, José Millán: Failure-relevant abnormal events in power inverters considering measured IGBT module temperature inhomogeneities. Microelectronics Reliability 47(9-11): 1784-1789 (2007)
	2006
6		X. Perpiñà, J. F. Serviere, J. Saiz, D. Barlini, Michel Mermet-Guyennet, José Millán: Temperature measurement on series resistance and devices in power packs based on on-state voltage drop monitoring at high current. Microelectronics Reliability 46(9-11): 1834-1839 (2006)
	2004
5		X. Perpiñà, Xavier Jordà, N. Mestres, Miquel Vellvehí, Philippe Godignon, José Millán: Self-heating experimental study of 600V PT-IGBTs under low dissipation energies. Microelectronics Journal 35(10): 841-847 (2004)
4		J. Roig, D. Flores, S. Hidalgo, J. Rebollo, José Millán: Thin-film silicon-on-sapphire LDMOS structures for RF power amplifier applications. Microelectronics Journal 35(3): 291-297 (2004)
3		A. Pérez-Tomás, Xavier Jordà, Philippe Godignon, J. L. Gálvez, Miquel Vellvehí, José Millán: IGBT gate driver IC with full-bridge output stage using a modified standard CMOS process. Microelectronics Journal 35(8): 659-666 (2004)
	2002
2		J. Roig, D. Flores, Miquel Vellvehí, J. Rebollo, José Millán: Reduction of self-heating effect on SOIM devices. Microelectronics Reliability 42(1): 61-66 (2002)
	2001
1		M. Badila, Philippe Godignon, José Millán, S. Berberich, G. Brezeanu: The electron irradiation effects on silicon gate dioxide used for power MOS devices. Microelectronics Reliability 41(7): 1015-1018 (2001)

Coauthor Index

1	M. Badila	[1]
2	V. Banu	[10]
3	D. Barlini	[6]
4	S. Berberich	[1]
5	G. Brezeanu	[1]
6	P. Brosselard	[10]
7	Alberto Castellazzi	[7]
8	Carles Ferrer	[9]
9	D. Flores	[2] [4]
10	J. L. Gálvez	[3]
11	Philippe Godignon	[1] [3] [5] [9] [10]
12	S. Hidalgo	[4]
13	Xavier Jordà	[3] [5] [8] [9] [10]
14	Michel Mermet-Guyennet	[6] [7] [8]
15	N. Mestres	[5]
16	J. Montserrat	[10]
17	A. Pérez-Tomás	[3]
18	X. Perpiñà	[5] [6] [7] [8]
19	M. Piton	[7] [8]
20	J. Rebollo	[2] [4]
21	J. Roig	[2] [4]
22	J. Saiz	[6]
23	J. F. Serviere	[6]
24	Miquel Vellvehí	[2] [3] [5] [9]

Last update Mon Jun 4 20:40:43 2012 CET by the DBLP Team — Data released under the ODC-BY 1.0 license — See also our legal information page