 | 2005 |
|---|
| 5 |       | C. Petit,
A. Meinertzhagen,
D. Zander,
O. Simonetti,
M. Fadlallah,
T. Maurel:
Low voltage SILC and P- and N-MOSFET gate oxide reliability.
Microelectronics Reliability 45(3-4): 479-485 (2005) |
| 2003 |
|---|
| 4 | | M. Fadlallah,
C. Petit,
A. Meinertzhagen,
G. Ghibaudo,
M. Bidaud,
O. Simonetti,
F. Guyader:
Influence of nitradation in ultra-thin oxide on the gate current degradation of N and PMOS devices.
Microelectronics Reliability 43(9-11): 1433-1438 (2003) |
| 3 | | D. Zander,
F. Saigné,
A. Meinertzhagen,
C. Petit:
Contribution of oxide traps on defect creation and LVSILC conduction in ultra thin gate oxide devices.
Microelectronics Reliability 43(9-11): 1489-1493 (2003) |
| 2001 |
|---|
| 2 | | D. Zander,
C. Petit,
F. Saigné,
A. Meinertzhagen:
High field stress at and above room temperature in 2.3 nm thick oxides.
Microelectronics Reliability 41(7): 1023-1026 (2001) |
| 1 |  | D. Zander,
F. Saigné,
A. Meinertzhagen:
Creation and thermal annealing of interface states induced by uniform or localized injection in 2.3nm thick oxides.
Microelectronics Reliability 41(9-10): 1355-1360 (2001) |
Data released under the ODC-BY 1.0 license — See also our legal information page