P. A. Mawby

	2012
6		B. T. Donnellan, G. J. Roberts, P. A. Mawby, A. T. Bryant: Modelling of current sharing in paralleled current limiting superjunction MOSFETs with common gate drives. Microelectronics Reliability 52(3): 497-502 (2012)
	2007
5		A. Pérez-Tomás, M. R. Jennings, M. Davis, V. Shah, T. Grasby, J. A. Covington, P. A. Mawby: High doped MBE Si p-n and n-n heterojunction diodes on 4H-SiC. Microelectronics Journal 38(12): 1233-1237 (2007)
	2006
4		L. Chen, O. J. Guy, D. Doneddu, S. G. J. Batcup, S. P. Wilks, P. A. Mawby, T. Bouchet, F. Torregrosa: Report on 4H-SiC JTE Schottky diodes. Microelectronics Reliability 46(2-4): 637-640 (2006)
	2004
3		P. M. Igic, M. S. Towers, P. A. Mawby: A 2D physically based compact model for advanced power bipolar devices. Microelectronics Journal 35(7): 591-594 (2004)
	2002
2		P. M. Igic, P. A. Mawby, M. S. Towers, W. Jamal, S. G. J. Batcup: Investigation of the power dissipation during IGBT turn-off using a new physics-based IGBT compact model. Microelectronics Reliability 42(7): 1045-1052 (2002)
	2001
1		P. A. Mawby, P. M. Igic, M. S. Towers: New physics-based compact electro-thermal model of power diode dedicated to circuit simulation. ISCAS (3) 2001: 401-404

Coauthor Index

1	S. G. J. Batcup	[2] [4]
2	T. Bouchet	[4]
3	A. T. Bryant	[6]
4	L. Chen	[4]
5	J. A. Covington	[5]
6	M. Davis	[5]
7	D. Doneddu	[4]
8	B. T. Donnellan	[6]
9	T. Grasby	[5]
10	O. J. Guy	[4]
11	P. M. Igic	[1] [2] [3]
12	W. Jamal	[2]
13	M. R. Jennings	[5]
14	A. Pérez-Tomás	[5]
15	G. J. Roberts	[6]
16	V. Shah	[5]
17	F. Torregrosa	[4]
18	M. S. Towers	[1] [2] [3]
19	S. P. Wilks	[4]

Colors in the list of coauthors

Last update Mon Jun 4 20:40:43 2012 CET by the DBLP Team — Data released under the ODC-BY 1.0 license — See also our legal information page