M. Masmoudi

	2012
15		R. M. Ayadi, S. Mahresi, M. Masmoudi: Self-Calibration of Output Match and Reverse Isolation in LNAs Based Switchable Resistor. J. Electronic Testing 28(2): 167-176 (2012)
14		Fouad Ben Abdelaziz, M. Masmoudi: A multiobjective stochastic program for hospital bed planning. JORS 63(4): 530-538 (2012)
	2010
13		A. Ben Abda, M. Hassine, M. Jaoua, M. Masmoudi: Topological sensitivity analysis for the location of small flaws in Stokes flow. CDC 2010: 1860-1865
12		R. M. Ayadi, M. Masmoudi: Fault Coverage Analysis of Peak-Detector Based BIST for RF LNAs. J. Electronic Testing 26(1): 37-45 (2010)
11		O. Latry, P. Dherbécourt, K. Mourgues, H. Maanane, J. P. Sipma, F. Cornu, Ph. Eudeline, M. Masmoudi: A 5000 h RF life test on 330 W RF-LDMOS transistors for radars applications. Microelectronics Reliability 50(9-11): 1574-1576 (2010)
	2009
10		A. Ben Abda, M. Hassine, M. Jaoua, M. Masmoudi: Topological Sensitivity Analysis for the Location of Small Cavities in Stokes Flow. SIAM J. Control and Optimization 48(5): 2871-2900 (2009)
	2007
9		M. A. Belaïd, K. Ketata, K. Mourgues, M. Gares, M. Masmoudi, J. Marcon: Reliability study of power RF LDMOS device under thermal stress. Microelectronics Journal 38(2): 164-170 (2007)
8		M. A. Belaïd, K. Ketata, M. Gares, K. Mourgues, M. Masmoudi, J. Marcon: Comparative analysis of RF LDMOS capacitance reliability under accelerated ageing tests. Microelectronics Reliability 47(1): 59-64 (2007)
7		M. Gares, M. A. Belaïd, H. Maanane, M. Masmoudi, J. Marcon, K. Mourgues, Ph. Eudeline: Study of hot-carrier effects on power RF LDMOS device reliability. Microelectronics Reliability 47(9-11): 1394-1399 (2007)
	2006
6		M. Gares, H. Maanane, M. A. Belaïd, M. Masmoudi, J. Marcon, K. Mourgues, P. Bertram, Ph. Eudeline: Impact de la Temperature sur la Fiabilite des Composants rf Ldmos de Puissance. CCECE 2006: 382-385
5		M. Hanine, M. Masmoudi: A reliable guideline to maximize the detection and analysis of deep level defects: Comparison between DLTS analysis techniques. Microelectronics Journal 37(11): 1188-1193 (2006)
4		H. Maanane, M. Masmoudi, J. Marcon, M. A. Belaïd, K. Mourgues, C. Tolant, K. Ketata, Ph. Eudeline: Study of RF N- LDMOS critical electrical parameter drifts after a thermal and electrical ageing in pulsed RF. Microelectronics Reliability 46(5-6): 994-1000 (2006)
3		M. A. Belaïd, K. Ketata, M. Masmoudi, M. Gares, H. Maanane, J. Marcon: Electrical parameters degradation of power RF LDMOS device after accelerated ageing tests. Microelectronics Reliability 46(9-11): 1800-1805 (2006)
2		M. Gares, H. Maanane, M. Masmoudi, P. Bertram, J. Marcon, M. A. Belaïd, K. Mourgues, C. Tolant, Ph. Eudeline: Hot carrier reliability of RF N- LDMOS for S Band radar application. Microelectronics Reliability 46(9-11): 1806-1811 (2006)
	2005
1		M. A. Belaïd, K. Ketata, K. Mourgues, H. Maanane, M. Masmoudi, J. Marcon: Comparative analysis of accelerated ageing effects on power RF LDMOS reliability. Microelectronics Reliability 45(9-11): 1732-1737 (2005)

Coauthor Index

1	A. Ben Abda	[10] [13]
2	Fouad Ben Abdelaziz	[14]
3	R. M. Ayadi	[12] [15]
4	M. A. Belaïd	[1] [2] [3] [4] [6] [7] [8] [9]
5	P. Bertram	[2] [6]
6	F. Cornu	[11]
7	P. Dherbécourt	[11]
8	Ph. Eudeline	[2] [4] [6] [7] [11]
9	M. Gares	[2] [3] [6] [7] [8] [9]
10	M. Hanine	[5]
11	M. Hassine	[10] [13]
12	M. Jaoua	[10] [13]
13	K. Ketata	[1] [3] [4] [8] [9]
14	O. Latry	[11]
15	H. Maanane	[1] [2] [3] [4] [6] [7] [11]
16	S. Mahresi	[15]
17	J. Marcon	[1] [2] [3] [4] [6] [7] [8] [9]
18	K. Mourgues	[1] [2] [4] [6] [7] [8] [9] [11]
19	J. P. Sipma	[11]
20	C. Tolant	[2] [4]

Colors in the list of coauthors

Last update Sun Jun 3 16:06:10 2012 CET by the DBLP Team — Data released under the ODC-BY 1.0 license — See also our legal information page