 | 2012 |
| 9 |  | Renan Trevisoli Doria,
João Antonio Martino,
Eddy Simoen,
Cor Claeys,
Marcelo Antonio Pavanello:
An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devices.
Microelectronics Reliability 52(3): 519-524 (2012) |
| 2010 |
| 8 |  | João Antonio Martino,
Guido Araujo,
Alex Orailoglu,
Felipe Klein:
Proceedings of the 23rd Annual Symposium on Integrated Circuits and Systems Design, SBCCI 2010, São Paulo, Brazil, September 6-9, 2010
ACM 2010 |
| 2007 |
| 7 |  | Paula Ghedini Der Agopian,
João Antonio Martino,
Eddy Simoen,
Cor Claeys:
Study of the linear kink effect in PD SOI nMOSFETs.
Microelectronics Journal 38(1): 114-119 (2007) |
| 2006 |
| 6 |  | Salvador Pinillos Gimenez,
Marcelo Antonio Pavanello,
João Antonio Martino,
Denis Flandre:
Gain improvement in operational transconductance amplifiers using Graded-Channel SOI nMOSFETS.
Microelectronics Journal 37(1): 31-37 (2006) |
| 5 |  | Marcelo Antonio Pavanello,
Paula Ghedini Der Agopian,
João Antonio Martino,
Denis Flandre:
Cryogenic operation of graded-channel silicon-on-insulator nMOSFETs for high performance analog applications.
Microelectronics Journal 37(2): 137-144 (2006) |
| 4 |  | Milene Galeti,
Marcelo Antonio Pavanello,
João Antonio Martino:
Evaluation of graded-channel SOI MOSFET operation at high temperatures.
Microelectronics Journal 37(7): 601-607 (2006) |
| 3 |  | Paula Ghedini Der Agopian,
João Antonio Martino,
Eddy Simoen,
Cor Claeys:
Impact of the twin-gate structure on the linear kink effect in PD SOI nMOSFETS.
Microelectronics Journal 37(8): 681-685 (2006) |
| 2 |  | L. M. Camillo,
João Antonio Martino,
Eddy Simoen,
Cor Claeys:
The temperature mobility degradation influence on the zero temperature coefficient of partially and fully depleted SOI MOSFETs.
Microelectronics Journal 37(9): 952-957 (2006) |
| 2003 |
| 1 |  | Salvador Pinillos Gimenez,
Marcelo Antonio Pavanello,
João Antonio Martino,
S. Adriaensen,
Denis Flandre:
Design of Operational Transconductance Amplifiers with Improved Gain by Using Graded-Channel SOI nMOSFETs.
SBCCI 2003: 26- |