T. P. Ma

	2011
4		T. P. Ma: Inelastic electron tunneling spectroscopy (IETS) study of high-k gate dielectrics. SCIENCE CHINA Information Sciences 54(5): 980-989 (2011)
	2008
3		T. P. Ma: Novel electrical characterization for advanced CMOS gate dielectrics. Science in China Series F: Information Sciences 51(6): 774-779 (2008)
	2003
2		T. P. Ma: Gate dielectrics for Si, SiC, and GaN as synthesized by jet vapor deposition. Microelectronics Journal 34(5-8): 363-370 (2003)
	2002
1		Carlton M. Osburn, Indong Kim, Sungkee Han, Indranil De, Kam F. Yee, Shyam Gannavaram, SungJoo Lee, Chung-Ho Lee, Zhijiong J. Luo, Wenjuan Zhu, John R. Hauser, Dim-Lee Kwong, Gerald Lucovsky, T. P. Ma, Mehmet C. Öztürk: Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go? IBM Journal of Research and Development 46(2-3): 299-316 (2002)

Coauthor Index

1	Indranil De	[1]
2	Shyam Gannavaram	[1]
3	Sungkee Han	[1]
4	John R. Hauser	[1]
5	Indong Kim	[1]
6	Dim-Lee Kwong	[1]
7	Chung-Ho Lee	[1]
8	SungJoo Lee	[1]
9	Gerald Lucovsky	[1]
10	Zhijiong J. Luo	[1]
11	Carlton M. Osburn	[1]
12	Mehmet C. Öztürk	[1]
13	Kam F. Yee	[1]
14	Wenjuan Zhu	[1]

Last update Sun Jun 3 16:06:10 2012 CET by the DBLP Team — Data released under the ODC-BY 1.0 license — See also our legal information page