Chenyue Ma

	2011
5		Chenyue Ma, Lining Zhang, Chenfei Zhang, Xiufang Zhang, Jin He, Xing Zhang: A physical based model to predict performance degradation of FinFET accounting for interface state distribution effect due to hot carrier injection. Microelectronics Reliability 51(2): 337-341 (2011)
	2010
4		Chenyue Ma, Hao Wang, Xiufang Zhang, Frank He, Yadong He, Xing Zhang, Xinnan Lin: Asymmetric issues of FinFET device after hot carrier injection and impact on digital and analog circuits. ISQED 2010: 432-436
3		Chenyue Ma, Hao Wang, Chenfei Zhang, Xiufang Zhang, Jin He, Xing Zhang: Temperature dependence of the interface state distribution due to hot carrier effect in FinFET device. Microelectronics Reliability 50(8): 1077-1080 (2010)
	2009
2		Chenyue Ma, Bo Li, Lining Zhang, Jin He, Xing Zhang, Xinnan Lin, Mansun Chan: A unified FinFET reliability model including high K gate stack dynamic threshold voltage, hot carrier injection, and negative bias temperature instability. ISQED 2009: 7-12
	2008
1		Yue Fu, Jin He, Feng Liu, Jie Feng, Chenyue Ma, Lining Zhang: Study on the Si-Ge Nanowire MOSFETs with the Core-Shell Structure. ISQED 2008: 531-536

Coauthor Index

1	Mansun Chan	[2]
2	Jie Feng	[1]
3	Yue Fu	[1]
4	Frank He	[4]
5	Jin He	[1] [2] [3] [5]
6	Yadong He	[4]
7	Bo Li	[2]
8	Xinnan Lin	[2] [4]
9	Feng Liu	[1]
10	Hao Wang	[3] [4]
11	Chenfei Zhang	[3] [5]
12	Lining Zhang	[1] [2] [5]
13	Xing Zhang	[2] [3] [4] [5]
14	Xiufang Zhang	[3] [4] [5]

Last update Sun Jun 3 16:06:10 2012 CET by the DBLP Team — Data released under the ODC-BY 1.0 license — See also our legal information page