 | 2010 |
| 3 |  | Chenyue Ma,
Hao Wang,
Xiufang Zhang,
Frank He,
Yadong He,
Xing Zhang,
Xinnan Lin:
Asymmetric issues of FinFET device after hot carrier injection and impact on digital and analog circuits.
ISQED 2010: 432-436 |
| 2 |  | Lining Zhang,
Jian Zhang,
Yan Song,
Xinnan Lin,
Jin He,
Mansun Chan:
Charge-based model for symmetric double-gate MOSFETs with inclusion of channel doping effect.
Microelectronics Reliability 50(8): 1062-1070 (2010) |
| 2009 |
| 1 |  | Chenyue Ma,
Bo Li,
Lining Zhang,
Jin He,
Xing Zhang,
Xinnan Lin,
Mansun Chan:
A unified FinFET reliability model including high K gate stack dynamic threshold voltage, hot carrier injection, and negative bias temperature instability.
ISQED 2009: 7-12 |