F. Lime

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2003

2 F. Lime, G. Ghibaudo, B. Guillaumot: Charge trapping in SiO2/HfO2/TiN gate stack. Microelectronics Reliability 43(9-11): 1445-1448 (2003)

2001

1 F. Lime, G. Ghibaudo, G. Guégan: Stress induced leakage current at low field in ultra thin oxides. Microelectronics Reliability 41(9-10): 1421-1425 (2001)

	2003
2		F. Lime, G. Ghibaudo, B. Guillaumot: Charge trapping in SiO2/HfO2/TiN gate stack. Microelectronics Reliability 43(9-11): 1445-1448 (2003)
	2001
1		F. Lime, G. Ghibaudo, G. Guégan: Stress induced leakage current at low field in ultra thin oxides. Microelectronics Reliability 41(9-10): 1421-1425 (2001)

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