 | 2008 |
| 4 |  | Weijun Luo,
Xiaoliang Wang,
Lunchun Guo,
Hongling Xiao,
Cuimei Wang,
Junxue Ran,
Jianping Li,
Jinmin Li:
Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(1 1 1) by MOCVD.
Microelectronics Journal 39(12): 1710-1713 (2008) |
| 3 |  | Weijun Luo,
Xiaoliang Wang,
Hongling Xiao,
Cuimei Wang,
Junxue Ran,
Lunchun Guo,
Jianping Li,
Hongxin Liu,
Yanling Chen,
Fuhua Yang,
Jinmin Li:
Growth and fabrication of AlGaN/GaN HEMT based on Si(1 1 1) substrates by MOCVD.
Microelectronics Journal 39(9): 1108-1111 (2008) |
| 2006 |
| 2 |  | Junxue Ran,
Xiaoliang Wang,
Guoxin Hu,
Junxi Wang,
Jianping Li,
Cuimei Wang,
Yiping Zeng,
Jinmin Li:
Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD.
Microelectronics Journal 37(7): 583-585 (2006) |
| 2005 |
| 1 |  | Xiaoliang Wang,
Cuimei Wang,
Guoxin Hu,
Junxi Wang,
Junxue Ran,
Cebao Fang,
Jianping Li,
Yiping Zeng,
Jinmin Li,
Xinyu Liu,
He Qian:
Growth and characterization of 0.8-µm gate length AlGaN/GaN HEMTs on sapphire substrates.
Science in China Series F: Information Sciences 48(6): 808-814 (2005) |