M. C. Lemme

	2009
3		R. Peibst, T. Dürkop, E. Bugiel, N. Koo, T. Mollenhauer, M. C. Lemme, H. Kurz, K. R. Hofmann: PECVD grown Ge nanocrystals embedded in SiO2: From disordered to templated self-organization. Microelectronics Journal 40(4-5): 759-761 (2009)
	2007
2		S. Abermann, J. K. Efavi, G. Sjöblom, M. C. Lemme, J. Olsson, Emmerich Bertagnolli: Impact of Al-, Ni-, TiN-, and Mo-metal gates on MOCVD-grown HfO2 and ZrO2 high-kappa dielectrics. Microelectronics Reliability 47(4-5): 536-539 (2007)
	2005
1		M. C. Lemme, J. K. Efavi, H. D. B. Gottlob, T. Mollenhauer, T. Wahlbrink, H. Kurz: Comparison of metal gate electrodes on MOCVD HfO2. Microelectronics Reliability 45(5-6): 953-956 (2005)

Coauthor Index

1	S. Abermann	[2]
2	Emmerich Bertagnolli	[2]
3	E. Bugiel	[3]
4	T. Dürkop	[3]
5	J. K. Efavi	[1] [2]
6	H. D. B. Gottlob	[1]
7	K. R. Hofmann	[3]
8	N. Koo	[3]
9	H. Kurz	[1] [3]
10	T. Mollenhauer	[1] [3]
11	J. Olsson	[2]
12	R. Peibst	[3]
13	G. Sjöblom	[2]
14	T. Wahlbrink	[1]

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