 | 2007 |
|---|
| 6 |       | Albena Paskaleva,
Martin Lemberger,
Anton J. Bauer:
Polarity asymmetry of stress and charge trapping behavior of thin Hf- and Zr-silicate layers.
Microelectronics Reliability 47(12): 2094-2099 (2007) |
| 5 | | Martin Lemberger,
A. Baunemann,
Anton J. Bauer:
Chemical vapor deposition of tantalum nitride films for metal gate application using TBTDET and novel single-source MOCVD precursors.
Microelectronics Reliability 47(4-5): 635-639 (2007) |
| 2005 |
|---|
| 4 | | Martin Lemberger,
Albena Paskaleva,
Stefan Zürcher,
Anton J. Bauer,
Lothar Frey,
Heiner Ryssel:
Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor.
Microelectronics Reliability 45(5-6): 819-822 (2005) |
| 3 | | Albena Paskaleva,
Anton J. Bauer,
Martin Lemberger:
Conduction mechanisms and an evidence for phonon-assisted conduction process in thin high-k HfxTiySizO films.
Microelectronics Reliability 45(7-8): 1124-1133 (2005) |
| 2003 |
|---|
| 2 | | Albena Paskaleva,
Martin Lemberger,
Stefan Zürcher,
Anton J. Bauer,
Lothar Frey,
Heiner Ryssel:
Electrical characterization of zirconium silicate films obtained from novel MOCVD precursors.
Microelectronics Reliability 43(8): 1253-1257 (2003) |
| 2001 |
|---|
| 1 | | M. P. M. Jank,
Martin Lemberger,
Anton J. Bauer,
Lothar Frey,
Heiner Ryssel:
Electrical reliability aspects of through the gate implanted MOS structures with thin oxides.
Microelectronics Reliability 41(7): 987-990 (2001) |
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