 | 2007 |
|---|
| 6 |       | Fu-Chien Chiu,
Wen-Chieh Shih,
Joseph Ya-min Lee,
Huey-Liang Hwang:
An investigation of surface state capture cross-sections for metal-oxide-semiconductor field-effect transistors using HfO2 gate dielectrics.
Microelectronics Reliability 47(4-5): 548-551 (2007) |
| 5 | | Hsin-hao Hsu,
Joseph Ya-min Lee:
Electrical characterization of metal-oxide-high-k dielectric-oxide-semiconductor (MOHOS) structures for memory applications.
Microelectronics Reliability 47(4-5): 606-609 (2007) |
| 4 | | Yu-Di Su,
Wen-Chieh Shih,
Joseph Ya-min Lee:
The characterization of retention properties of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (Dy2O3, Y2O3)-semiconductor devices.
Microelectronics Reliability 47(4-5): 619-622 (2007) |
| 2006 |
|---|
| 3 | | Shao-You Deng,
Chang-Han Wu,
Joseph Ya-min Lee:
Hydrogen-induced transient effect in carbon-doped InGaP hetero-junction bipolar transistors.
Microelectronics Journal 37(8): 678-680 (2006) |
| 2005 |
|---|
| 2 | | Fu-Chien Chiu,
Shun-An Lin,
Joseph Ya-min Lee:
Electrical properties of metal-HfO2-silicon system measured from metal-insulator-semiconductor capacitors and metal-insulator-semiconductor field-effect transistors using HfO2 gate dielectric.
Microelectronics Reliability 45(5-6): 961-964 (2005) |
| 1 | | Ming-Tsong Wang,
Tsung-Hong Wang,
Joseph Ya-min Lee:
Electrical conduction mechanism in high-dielectric-constant ZrO2 thin films.
Microelectronics Reliability 45(5-6): 969-972 (2005) |
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