B. Lambert

	2010
5		M. Faqir, M. Bouya, N. Malbert, Nathalie Labat, D. Carisetti, B. Lambert, G. Verzellesi, Fausto Fantini: Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations. Microelectronics Reliability 50(9-11): 1520-1522 (2010)
4		B. Lambert, G. Jonsson, J. Bataille, C. Ollivier, P. Mezenge, H. Derewonko, H. Thomas, D. Floriot, H. Blanck, C. Moreau: Reliability of high voltage/high power L/S-band Hbt technology. Microelectronics Reliability 50(9-11): 1543-1547 (2010)
	2008
3		M. Bouya, N. Malbert, Nathalie Labat, D. Carisetti, Philippe Perdu, J. C. Clement, B. Lambert, M. Bonnet: Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques. Microelectronics Reliability 48(8-9): 1366-1369 (2008)
	2002
2		Nathalie Labat, N. Malbert, B. Lambert, André Touboul, F. Garat, B. Proust: Degradation mechanisms induced by thermal and bias stresses in InP HEMTs. Microelectronics Reliability 42(9-11): 1575-1580 (2002)
	2001
1		B. Lambert, N. Malbert, Nathalie Labat, F. Verdier, André Touboul, P. Huguet, R. Bonnet, G. Pataut: Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses. Microelectronics Reliability 41(9-10): 1573-1578 (2001)

Coauthor Index

1	J. Bataille	[4]
2	H. Blanck	[4]
3	M. Bonnet	[3]
4	R. Bonnet	[1]
5	M. Bouya	[3] [5]
6	D. Carisetti	[3] [5]
7	J. C. Clement	[3]
8	H. Derewonko	[4]
9	Fausto Fantini	[5]
10	M. Faqir	[5]
11	D. Floriot	[4]
12	F. Garat	[2]
13	P. Huguet	[1]
14	G. Jonsson	[4]
15	Nathalie Labat	[1] [2] [3] [5]
16	N. Malbert	[1] [2] [3] [5]
17	P. Mezenge	[4]
18	C. Moreau	[4]
19	C. Ollivier	[4]
20	G. Pataut	[1]
21	Philippe Perdu	[3]
22	B. Proust	[2]
23	H. Thomas	[4]
24	André Touboul	[1] [2]
25	F. Verdier	[1]
26	G. Verzellesi	[5]

Colors in the list of coauthors

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