 | 2011 |
|---|
| 6 |       | A. Marzaki,
V. Bidal,
R. Laffont,
Wenceslas Rahajandraibe,
Jean Michel Portal,
Rachid Bouchakour:
PSP based DCG-FGT transistor model including characterization procedure.
ICECS 2011: 228-231 |
| 2010 |
|---|
| 5 | | J. Postel-Pellerin,
R. Laffont,
G. Micolau,
F. Lalande,
A. Regnier,
B. Bouteille:
Leakage paths identification in NVM using biased data retention.
Microelectronics Reliability 50(9-11): 1474-1478 (2010) |
| 2009 |
|---|
| 4 | | M. Roca,
R. Laffont,
G. Micolau,
F. Lalande,
O. Pizzuto:
A Modelisation of the temperature dependence of the Fowler-Nordheim current in EEPROM memories.
Microelectronics Reliability 49(9-11): 1070-1073 (2009) |
| 2007 |
|---|
| 3 | | C. Le Roux,
L. Lopez,
Abdellatif Firiti,
Jean-Luc Ogier,
F. Lalande,
R. Laffont,
G. Micolau:
A new method to quantify retention-failed cells of an EEPROM CAST.
Microelectronics Reliability 47(9-11): 1609-1613 (2007) |
| 2006 |
|---|
| 2 | | B. Saillet,
A. Regnier,
Jean Michel Portal,
B. Delsuc,
R. Laffont,
Pascal Masson,
Rachid Bouchakour:
MM11 based flash memory cell model including characterization procedure.
ISCAS 2006 |
| 2002 |
|---|
| 1 | | R. Laffont,
J. Razafindramora,
P. Canet,
Rachid Bouchakour,
J. M. Mirabel:
Decreasing EEPROM Programming Bias With Negative Voltage, Reliability Impact.
MTDT 2002: 168-176 |
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