 | 2009 |
| 5 |  | R. Peibst,
T. Dürkop,
E. Bugiel,
N. Koo,
T. Mollenhauer,
M. C. Lemme,
H. Kurz,
K. R. Hofmann:
PECVD grown Ge nanocrystals embedded in SiO2: From disordered to templated self-organization.
Microelectronics Journal 40(4-5): 759-761 (2009) |
| 2007 |
| 4 |  | V. I. Turchanikov,
A. N. Nazarov,
V. S. Lysenko,
V. Ostahov,
O. Winkler,
B. Spangenberg,
H. Kurz:
Charge accumulation in the dielectric of the nanocluster NVM MOS structures under anti- and unipolar W/E window formation.
Microelectronics Reliability 47(4-5): 626-630 (2007) |
| 2005 |
| 3 |  | R. Rölver,
O. Winkler,
M. Först,
B. Spangenberg,
H. Kurz:
Light emission from Si/SiO2 superlattices fabricated by RPECVD.
Microelectronics Reliability 45(5-6): 915-918 (2005) |
| 2 |  | M. C. Lemme,
J. K. Efavi,
H. D. B. Gottlob,
T. Mollenhauer,
T. Wahlbrink,
H. Kurz:
Comparison of metal gate electrodes on MOCVD HfO2.
Microelectronics Reliability 45(5-6): 953-956 (2005) |
| 1998 |
| 1 |  | J. Fischer,
C. Müller,
H. Kurz:
A Co-simulation Concept for an Efficient Analysis of Complex Logic Designs.
FPL 1998: 495-499 |