 | 2009 |
|---|
| 8 |       | R. Kudrawiec,
M. Motyka,
J. Misiewicz,
B. Paszkiewicz,
R. Paszkiewicz,
M. Tlaczala:
Contactless electroreflectance study of band bending for undoped, Si- and Mg-doped GaN layers and AlGaN/GaN transistor heterostructures.
Microelectronics Journal 40(2): 370-372 (2009) |
| 7 | | R. Kudrawiec,
M. Gladysiewicz,
M. Motyka,
J. Misiewicz,
G. Cywinski,
M. Siekacz,
C. Skierbiszewski:
Contactless electroreflectance of GaInN/AlInN multi quantum wells: The issue of broadening of optical transitions.
Microelectronics Journal 40(3): 392-395 (2009) |
| 6 | | R. Kudrawiec,
P. Poloczek,
J. Misiewicz,
M. Shafi,
J. Ibáñez,
R. H. Mari,
M. Henini,
M. Schmidbauer,
S. V. Novikov,
L. Turyanska,
S. I. Molina,
D. L. Sales,
M. F. Chisholm:
Photomodulated transmittance of GaBiAs layers grown on (0 0 1) and (3 1 1)B GaAs substrates.
Microelectronics Journal 40(3): 537-539 (2009) |
| 5 | | R. Kudrawiec,
M. Gladysiewicz,
J. Misiewicz,
G. Cywinski,
M. Siekacz,
C. Skierbiszewski:
Electromodulation spectroscopy of the ground and excited state transitions in GaInN/AlInN multi-quantum wells.
Microelectronics Journal 40(4-5): 805-808 (2009) |
| 2005 |
|---|
| 4 | | J. Misiewicz,
R. Kudrawiec,
M. Syperek,
R. Paszkiewicz,
B. Paszkiewicz,
M. Tlaczala:
Investigations of AlGaN/GaN field-effect transistor structures by photoreflectance spectroscopy.
Microelectronics Journal 36(3-6): 442-445 (2005) |
| 3 | | J. Misiewicz,
R. Kudrawiec,
M. Motyka,
J. Andrzejewski,
D. Gollub,
A. Forchel:
Photo- and contactless electro-reflectance spectroscopies of step-like GaInNAs/Ga(In)NAs/GaAs quantum wells.
Microelectronics Journal 36(3-6): 446-449 (2005) |
| 2003 |
|---|
| 2 | | J. Misiewicz,
G. Sek,
R. Kudrawiec,
K. Ryczko,
D. Gollub,
J. P. Reithmaier,
A. Forchel:
Photomodulation spectroscopy applied to low-dimensional semiconductor structures.
Microelectronics Journal 34(5-8): 351-353 (2003) |
| 1 | | J. Misiewicz,
P. Sitarek,
K. Ryczko,
R. Kudrawiec,
M. Fischer,
M. Reinhardt,
A. Forchel:
Influence of nitrogen on carrier localization in InGaAsN/GaAs single quantum wells.
Microelectronics Journal 34(5-8): 737-739 (2003) |
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