 | 2009 |
| 6 |  | J. Kovác,
J. Skriniarová,
M. Florovic,
J. Jakabovic,
J. Chovan,
R. Srnánek,
A. Vincze,
B. Sciana,
D. Radziewicz,
Iwona Zborowska-Lindert,
M. Tlaczala:
Preparation and properties of Zn delta-doped GaAs/AlGaAs heterojunction phototransistor.
Microelectronics Journal 40(3): 562-564 (2009) |
| 5 |  | J. Jakabovic,
J. Kovác,
M. Weis,
D. Hasko,
R. Srnánek,
P. Valent,
R. Resel:
Preparation and properties of thin parylene layers as the gate dielectrics for organic field effect transistors.
Microelectronics Journal 40(3): 595-597 (2009) |
| 2008 |
| 4 |  | D. Donoval,
M. Florovic,
D. Gregusová,
J. Kovác,
P. Kordos:
High-temperature performance of AlGaN/GaN HFETs and MOSHFETs.
Microelectronics Reliability 48(10): 1669-1672 (2008) |
| 2007 |
| 3 |  | J. Skriniarová,
D. Pudis,
I. Martincek,
J. Kovác,
N. Tarjányi,
Marián Veselý,
I. Turek:
Periodic structures prepared by two-beam interference method.
Microelectronics Journal 38(6-7): 746-749 (2007) |
| 2006 |
| 2 |  | D. Hasko,
J. Kovác,
F. Uherek,
J. Skriniarová,
J. Jakabovic,
L. Peternai:
Avalanche photodiode with sectional InGaAsP/InP charge layer.
Microelectronics Journal 37(6): 483-486 (2006) |
| 1 |  | L. Peternai,
J. Kovác,
G. Irmer,
S. Hasenöhrl,
J. Novák,
R. Srnánek:
Investigation of graded InxGa1-xP buffer by Raman scattering method.
Microelectronics Journal 37(6): 487-490 (2006) |